页 216 - 二极管 - 整流器 - 单 | 分立半导体产品

零件编号	制造商	描述	封装	库存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
SS12HE3_A/I	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 20V 1A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 20V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 125°C	封装: DO-214AC, SMA	库存7,104	20V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 20V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-65°C ~ 125°C
SS25SHE3/61T	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 50V 2A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 750mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-214AC, SMA	库存4,960	50V	2A	750mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 50V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
EGP30CHE3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 150V 3A GP20 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 150V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: GP20 Operating Temperature - Junction: -65°C ~ 150°C	封装: DO-201AA, DO-27, Axial	库存4,528	150V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 150V	-	Through Hole	DO-201AA, DO-27, Axial	GP20	-65°C ~ 150°C
MBRD835L-T	Diodes Incorporated	DIODE SCHOTTKY 35V 8A DPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 510mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.4mA @ 35V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK Operating Temperature - Junction: -65°C ~ 125°C	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存18,912	35V	8A	510mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.4mA @ 35V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK	-65°C ~ 125°C
12TQ035STRR	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 35V 15A D2PAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 560mV @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.75mA @ 35V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 150°C	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存7,728	35V	15A	560mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.75mA @ 35V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 150°C
RA202825XX	Powerex Inc.	DIODE MODULE 2.8KV 2500A PWRDISC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2800V Current - Average Rectified (Io): 2500A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3000A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 25µs Current - Reverse Leakage @ Vr: 200mA @ 2800V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AD Supplier Device Package: Pow-R-Disc Operating Temperature - Junction: -	封装: DO-200AD	库存4,480	2800V	2500A	1.25V @ 3000A	Standard Recovery >500ns, > 200mA (Io)	25µs	200mA @ 2800V	-	Chassis Mount	DO-200AD	Pow-R-Disc	-
JANTXV1N5809	Microsemi Corporation	DIODE GEN PURP 100V 3A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 875mV @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 65pF @ 10V, 1MHz Mounting Type: Through Hole Package / Case: B, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	封装: B, Axial	库存5,680	100V	3A	875mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 100V	65pF @ 10V, 1MHz	Through Hole	B, Axial	-	-65°C ~ 175°C
UPS615/TR13	Microsemi Corporation	DIODE SCHOTTKY 15V 6A POWERMITE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 15V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 320mV @ 6A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 4mA @ 15V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-216AA Supplier Device Package: Powermite Operating Temperature - Junction: -55°C ~ 125°C	封装: DO-216AA	库存2,208	15V	6A	320mV @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	-	4mA @ 15V	-	Surface Mount	DO-216AA	Powermite	-55°C ~ 125°C
BYC30WT-600PQ	WeEn Semiconductors	DIODE GEN PURP 600V 30A TO247-3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 2.75V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 22ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3 Operating Temperature - Junction: 175°C (Max)	封装: TO-247-3	库存3,424	600V	30A	2.75V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	22ns	10µA @ 600V	-	Through Hole	TO-247-3	TO-247-3	175°C (Max)
SFF505G C0G	TSC America Inc.	DIODE, SUPER FAST, 5A, 300V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 300V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Supplier Device Package: ITO-220AB Operating Temperature - Junction: -55°C ~ 150°C	封装: TO-220-3 Full Pack, Isolated Tab	库存2,752	300V	5A	1.3V @ 2.5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	50pF @ 4V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
SR805 A0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 8A, 5 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 700mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-201AD, Axial	库存3,904	50V	8A	700mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SBR0560S1Q-7	Diodes Incorporated	DIODE SBR 60V 500MA SOD123 Diode Type: Super Barrier Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 500mV @ 500mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -65°C ~ 150°C	封装: SOD-123	库存6,944	60V	500mA	500mV @ 500mA	Standard Recovery >500ns, > 200mA (Io)	-	100µA @ 60V	-	Surface Mount	SOD-123	SOD-123	-65°C ~ 150°C
CGRB202-G	Comchip Technology	DIODE GEN PURP 100V 2A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: 150°C (Max)	封装: DO-214AA, SMB	库存7,856	100V	2A	1.1V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	5µA @ 100V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	150°C (Max)
RS1DLHMHG	TSC America Inc.	DIODE, FAST, 0.8A, 200V, 150NS, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-219AB	库存2,832	200V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SFAF1008G C0G	TSC America Inc.	DIODE, SUPER FAST, 10A, 600V, 35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: 140pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	封装: TO-220-2 Full Pack	库存6,704	600V	10A	1.7V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	140pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
S4B	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 4A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 4 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 10 µA @ 100 V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	100 V	4A	1.15 V @ 4 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	10 µA @ 100 V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
STPS6M100SF	STMicroelectronics	DIODE SCHOTTKY 100V 6A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 35 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: 175°C (Max)	封装: -	库存62,961	100 V	6A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	35 µA @ 100 V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	175°C (Max)
1N3296RA	Solid State Inc.	DIODE GP REV 1.2KV 100A DO8 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 1200 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-8 Operating Temperature - Junction: -65°C ~ 200°C	封装: -	Request a Quote	1200 V	100A	1.2 V @ 200 A	Standard Recovery >500ns, > 200mA (Io)	-	50 µA @ 1200 V	-	Stud Mount	DO-205AA, DO-8, Stud	DO-8	-65°C ~ 200°C
GF4045PS-S1	SMC Diode Solutions	PLANAR SCHOTTKY MODULE 45V 40A G Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	库存180	-	-	-	-	-	-	-	-	-	-	-
JANS1N6874UTK2AS	Microchip Technology	DIODE GEN PURP 400MA THINKEY2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 400mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: ThinKey™2 Supplier Device Package: ThinKey™2 Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	-	400mA	1 V @ 400 mA	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Surface Mount	ThinKey™2	ThinKey™2	-65°C ~ 175°C
MBR1050F_T0_00001	Panjit International Inc.	DIODE SCHOTTKY 50V 10A ITO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 750 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 50 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: ITO-220AC Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	50 V	10A	750 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 50 V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	ITO-220AC	-65°C ~ 175°C
BY253	Diotec Semiconductor	DIODE DO201 600V 3A 150C Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: DO-201 Operating Temperature - Junction: -50°C ~ 150°C	封装: -	Request a Quote	600 V	3A	1.1 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	5 µA @ 600 V	-	Through Hole	DO-201AA, DO-27, Axial	DO-201	-50°C ~ 150°C
JANTX1N3614-TR	Microchip Technology	DIODE GEN PURP 800V 1A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 800 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	800 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 800 V	-	Through Hole	A, Axial	A, Axial	-65°C ~ 175°C
CR5-060-BK	Central Semiconductor Corp	DIODE GEN PURP 600V 5A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 5 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 25pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C	封装: -	Request a Quote	600 V	5A	1.2 V @ 5 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 600 V	25pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 150°C
SK85C-V6G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 8A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 50 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	50 V	8A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 50 V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
MURS1DBL-TP	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 2 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	200 V	1A	900 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	2 µA @ 200 V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
UFR-7140	Microchip Technology	DIODE GEN PURP 400V 70A DO203AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 70 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Current - Reverse Leakage @ Vr: 25 µA @ 400 V Capacitance @ Vr, F: 150pF @ 10V, 1MHz Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	400 V	70A	1.25 V @ 70 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	25 µA @ 400 V	150pF @ 10V, 1MHz	Stud Mount	DO-203AB, DO-5, Stud	DO-203AB (DO-5)	-65°C ~ 175°C
JANTXV1N6640-TR	Microchip Technology	DIODE GEN PURP 50V 300MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 300mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Current - Reverse Leakage @ Vr: 100 nA @ 50 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	50 V	300mA	1 V @ 200 mA	Fast Recovery =< 500ns, > 200mA (Io)	4 ns	100 nA @ 50 V	-	Through Hole	DO-204AH, DO-35, Axial	DO-204AH (DO-35)	-65°C ~ 175°C
RBQ3RSM65BTFTL1	Rohm Semiconductor	DIODE SCHOTTKY 65V 3A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 65 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 570 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 90 µA @ 65 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A Operating Temperature - Junction: 150°C	封装: -	库存12,000	65 V	3A	570 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	90 µA @ 65 V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A	150°C
1N1670	Solid State Inc.	DIODE GEN PURP 50V 275A DO9 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 275A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 75 µA @ 50 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-9 Operating Temperature - Junction: -65°C ~ 190°C	封装: -	Request a Quote	50 V	275A	1.3 V @ 300 A	Standard Recovery >500ns, > 200mA (Io)	-	75 µA @ 50 V	-	Stud Mount	DO-205AB, DO-9, Stud	DO-9	-65°C ~ 190°C

SS12HE3_A/I

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20V 1A DO214AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 125°C

封装: DO-214AC, SMA

库存7,104

20V

1A

500mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 20V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-65°C ~ 125°C

SS25SHE3/61T

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 50V 2A DO214AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 750mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AC, SMA

库存4,960

50V

2A

750mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 50V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

EGP30CHE3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 3A GP20

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-201AA, DO-27, Axial

库存4,528

150V

3A

950mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 150V

-

Through Hole

DO-201AA, DO-27, Axial

GP20

-65°C ~ 150°C

MBRD835L-T

Diodes Incorporated

DIODE SCHOTTKY 35V 8A DPAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 510mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1.4mA @ 35V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 125°C

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存18,912

35V

8A

510mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

-

1.4mA @ 35V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

DPAK

-65°C ~ 125°C

12TQ035STRR

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 35V 15A D2PAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 560mV @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1.75mA @ 35V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存7,728

35V

15A

560mV @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

-

1.75mA @ 35V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-55°C ~ 150°C

RA202825XX

Powerex Inc.

DIODE MODULE 2.8KV 2500A PWRDISC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 2800V
Current - Average Rectified (Io): 2500A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3000A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25µs
Current - Reverse Leakage @ Vr: 200mA @ 2800V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AD
Supplier Device Package: Pow-R-Disc
Operating Temperature - Junction: -

封装: DO-200AD

库存4,480

2800V

2500A

1.25V @ 3000A

Standard Recovery >500ns, > 200mA (Io)

25µs

200mA @ 2800V

-

Chassis Mount

DO-200AD

Pow-R-Disc

-

JANTXV1N5809

Microsemi Corporation

DIODE GEN PURP 100V 3A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 875mV @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 65pF @ 10V, 1MHz
Mounting Type: Through Hole
Package / Case: B, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 175°C

封装: B, Axial

库存5,680

100V

3A

875mV @ 4A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

5µA @ 100V

65pF @ 10V, 1MHz

Through Hole

B, Axial

-

-65°C ~ 175°C

UPS615/TR13

Microsemi Corporation

DIODE SCHOTTKY 15V 6A POWERMITE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 15V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 320mV @ 6A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 4mA @ 15V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-216AA
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C

封装: DO-216AA

库存2,208

15V

6A

320mV @ 6A

Fast Recovery =< 500ns, > 200mA (Io)

-

4mA @ 15V

-

Surface Mount

DO-216AA

Powermite

-55°C ~ 125°C

BYC30WT-600PQ

WeEn Semiconductors

DIODE GEN PURP 600V 30A TO247-3

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 2.75V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C (Max)

封装: TO-247-3

库存3,424

600V

30A

2.75V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

22ns

10µA @ 600V

-

Through Hole

TO-247-3

175°C (Max)

SFF505G C0G

TSC America Inc.

DIODE, SUPER FAST, 5A, 300V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 300V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-220-3 Full Pack, Isolated Tab

库存2,752

300V

5A

1.3V @ 2.5A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 300V

50pF @ 4V, 1MHz

Through Hole

TO-220-3 Full Pack, Isolated Tab

ITO-220AB

-55°C ~ 150°C

SR805 A0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 8A, 5

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-201AD, Axial

库存3,904

50V

8A

700mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 50V

-

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

SBR0560S1Q-7

Diodes Incorporated

DIODE SBR 60V 500MA SOD123

Diode Type: Super Barrier
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 500mV @ 500mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 150°C

封装: SOD-123

库存6,944

60V

500mA

500mV @ 500mA

Standard Recovery >500ns, > 200mA (Io)

-

100µA @ 60V

-

Surface Mount

SOD-123

-65°C ~ 150°C

CGRB202-G

Comchip Technology

DIODE GEN PURP 100V 2A DO214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: 150°C (Max)

封装: DO-214AA, SMB

库存7,856

100V

2A

1.1V @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

5µA @ 100V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

150°C (Max)

RS1DLHMHG

TSC America Inc.

DIODE, FAST, 0.8A, 200V, 150NS,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-219AB

库存2,832

200V

800mA

1.3V @ 800mA

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 200V

10pF @ 4V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

SFAF1008G C0G

TSC America Inc.

DIODE, SUPER FAST, 10A, 600V, 35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-220-2 Full Pack

库存6,704

600V

10A

1.7V @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 600V

140pF @ 4V, 1MHz

Through Hole

TO-220-2 Full Pack

ITO-220AC

-55°C ~ 150°C

S4B

Taiwan Semiconductor Corporation

DIODE GEN PURP 100V 4A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 4 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

100 V

4A

1.15 V @ 4 A

Standard Recovery >500ns, > 200mA (Io)

1.5 µs

10 µA @ 100 V

60pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C

STPS6M100SF

STMicroelectronics

DIODE SCHOTTKY 100V 6A TO277A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 35 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: 175°C (Max)

封装: -

库存62,961

100 V

6A

-

Fast Recovery =< 500ns, > 200mA (Io)

-

35 µA @ 100 V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

175°C (Max)

1N3296RA

Solid State Inc.

DIODE GP REV 1.2KV 100A DO8

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 100A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-8
Operating Temperature - Junction: -65°C ~ 200°C

封装: -

Request a Quote

1200 V

100A

1.2 V @ 200 A

Standard Recovery >500ns, > 200mA (Io)

-

50 µA @ 1200 V

-

Stud Mount

DO-205AA, DO-8, Stud

DO-8

-65°C ~ 200°C

GF4045PS-S1

SMC Diode Solutions

PLANAR SCHOTTKY MODULE 45V 40A G

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

库存180

-

JANS1N6874UTK2AS

Microchip Technology

DIODE GEN PURP 400MA THINKEY2

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): 400mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: ThinKey™2
Supplier Device Package: ThinKey™2
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

Request a Quote

-

400mA

1 V @ 400 mA

Standard Recovery >500ns, > 200mA (Io)

-

Surface Mount

ThinKey™2

-65°C ~ 175°C

MBR1050F_T0_00001

Panjit International Inc.

DIODE SCHOTTKY 50V 10A ITO220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 50 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

Request a Quote

50 V

10A

750 mV @ 10 A

Fast Recovery =< 500ns, > 200mA (Io)

-

50 µA @ 50 V

-

Through Hole

TO-220-2 Full Pack, Isolated Tab

ITO-220AC

-65°C ~ 175°C

BY253

Diotec Semiconductor

DIODE DO201 600V 3A 150C

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: DO-201
Operating Temperature - Junction: -50°C ~ 150°C

封装: -

Request a Quote

600 V

3A

1.1 V @ 3 A

Standard Recovery >500ns, > 200mA (Io)

1.5 µs

5 µA @ 600 V

-

Through Hole

DO-201AA, DO-27, Axial

DO-201

-50°C ~ 150°C

JANTX1N3614-TR

Microchip Technology

DIODE GEN PURP 800V 1A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

Request a Quote

800 V

1A

1.1 V @ 1 A

Standard Recovery >500ns, > 200mA (Io)

-

1 µA @ 800 V

-

Through Hole

A, Axial

-65°C ~ 175°C

CR5-060-BK

Central Semiconductor Corp

DIODE GEN PURP 600V 5A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 5 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C

封装: -

Request a Quote

600 V

5A

1.2 V @ 5 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 600 V

25pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 150°C

SK85C-V6G

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 50V 8A DO214AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

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50 V

8A

-

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 50 V

-

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C

MURS1DBL-TP

Micro Commercial Co

Interface

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

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200 V

1A

900 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

25 ns

2 µA @ 200 V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

UFR-7140

Microchip Technology

DIODE GEN PURP 400V 70A DO203AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 70A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 70 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Capacitance @ Vr, F: 150pF @ 10V, 1MHz
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

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400 V

70A

1.25 V @ 70 A

Fast Recovery =< 500ns, > 200mA (Io)

60 ns

25 µA @ 400 V

150pF @ 10V, 1MHz

Stud Mount

DO-203AB, DO-5, Stud

DO-203AB (DO-5)

-65°C ~ 175°C

JANTXV1N6640-TR

Microchip Technology

DIODE GEN PURP 50V 300MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 300mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

Request a Quote

50 V

300mA

1 V @ 200 mA

Fast Recovery =< 500ns, > 200mA (Io)

4 ns

100 nA @ 50 V

-

Through Hole

DO-204AH, DO-35, Axial

DO-204AH (DO-35)

-65°C ~ 175°C

RBQ3RSM65BTFTL1

Rohm Semiconductor

DIODE SCHOTTKY 65V 3A TO277A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 65 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C

封装: -

库存12,000

65 V

3A

570 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

90 µA @ 65 V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277A

150°C

1N1670

Solid State Inc.

DIODE GEN PURP 50V 275A DO9

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 275A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 75 µA @ 50 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-9
Operating Temperature - Junction: -65°C ~ 190°C

封装: -

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50 V

275A

1.3 V @ 300 A

Standard Recovery >500ns, > 200mA (Io)

-

75 µA @ 50 V

-

Stud Mount

DO-205AB, DO-9, Stud

DO-9

-65°C ~ 190°C