图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 2.1A TO277A
|
封装: TO-277, 3-PowerDFN |
库存6,048 |
|
600V | 2.1A (DC) | 920mV @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 1.2µs | 10µA @ 600V | 37pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 3A DO214AB
|
封装: DO-214AB, SMC |
库存7,264 |
|
200V | 3A | 1.15V @ 2.5A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 10µA @ 200V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | -55°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 8A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存36,000 |
|
1000V | 8A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 270ns | 100µA @ 1000V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 150°C |
||
Diodes Incorporated |
DIODE SCHOTTKY 20V 2A SMA
|
封装: DO-214AC, SMA |
库存96,300 |
|
20V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | 200pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | SMA | -65°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 2.4KV 400A DO205
|
封装: DO-205AB, DO-9, Stud |
库存3,568 |
|
2400V | 400A | 1.62V @ 1500A | Standard Recovery >500ns, > 200mA (Io) | - | 15mA @ 2400V | - | Chassis, Stud Mount | DO-205AB, DO-9, Stud | DO-205AB, DO-9 | -40°C ~ 190°C |
||
GeneSiC Semiconductor |
DIODE GEN PURP 600V 35A DO5
|
封装: DO-203AB, DO-5, Stud |
库存5,248 |
|
600V | 35A | 1.2V @ 35A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 190°C |
||
Vishay Semiconductor Diodes Division |
DIODE 40A BRAZ SQR DO5
|
封装: DO-203AB, DO-5, Stud |
库存4,000 |
|
600V | 40A | 1.3V @ 125A | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -65°C ~ 190°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 20A TO263AB
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存6,912 |
|
800V | 20A | 1.1V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 800V | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | -40°C ~ 150°C |
||
TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 5A, 1
|
封装: DO-214AB, SMC |
库存7,104 |
|
150V | 5A | 550mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 150V | - | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | -55°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 3A DO214AB
|
封装: DO-214AB, SMC |
库存7,072 |
|
100V | 3A | 1.3V @ 2.5A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 10µA @ 100V | 44pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | -55°C ~ 150°C |
||
Central Semiconductor Corp |
DIODE GEN PURP 240V 200MA SOT23
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存7,488 |
|
240V | 200mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 50ns | 100nA @ 240V | 5pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | -65°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1A DO214BA
|
封装: DO-214BA |
库存6,624 |
|
1000V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 1000V | 8.5pF @ 4V, 1MHz | Surface Mount | DO-214BA | DO-214BA (GF1) | -65°C ~ 175°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A DO204AL
|
封装: DO-204AL, DO-41, Axial |
库存4,496 |
|
600V | 1A | - | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | - |
||
TSC America Inc. |
DIODE, HIGH EFFICIENT, 1A, 50V,
|
封装: DO-204AL, DO-41, Axial |
库存4,352 |
|
50V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 50V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 150MW 60V SOD323
|
封装: SC-76, SOD-323 |
库存5,136 |
|
60V | 30mA (DC) | 1V @ 15mA | Small Signal =< 200mA (Io), Any Speed | 1ns | 200nA @ 50V | 2pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | SOD-323 | -55°C ~ 125°C |
||
TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 1A, 1
|
封装: DO-204AL, DO-41, Axial |
库存3,424 |
|
150V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 400MW 40V SOD123
|
封装: SOD-123 |
库存4,304 |
|
40V | 30mA (DC) | 1V @ 15mA | Small Signal =< 200mA (Io), Any Speed | 1ns | 200nA @ 30V | 2pF @ 0V, 1MHz | Surface Mount | SOD-123 | SOD-123 | -55°C ~ 125°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 125V 200MA SOD80
|
封装: SOD-80 Variant |
库存3,952 |
|
125V | 200mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 1nA @ 60V | 3pF @ 0V, 1MHz | Surface Mount | SOD-80 Variant | SOD-80 QuadroMELF | -65°C ~ 175°C |
||
Nexperia USA Inc. |
DIODE SCHOTTKY 40V 120MA SOD882
|
封装: SOD-882 |
库存2,160 |
|
40V | 120mA (DC) | 370mV @ 1mA | Small Signal =< 200mA (Io), Any Speed | - | 500nA @ 30V | 2pF @ 1V, 1MHz | Surface Mount | SOD-882 | DFN1006-2 | 150°C (Max) |
||
Vishay Semiconductor Diodes Division |
DIODE MODULE 1KV 40A D-55
|
封装: D-55 T-Module |
库存6,032 |
|
1000V | 40A | - | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 100µA @ 1000V | - | Chassis Mount | D-55 T-Module | D-55 | - |
||
Diodes Incorporated |
DIODE SCHOTTKY 2.0A 100V
|
封装: DO-214AC, SMA |
库存109,020 |
|
100V | 2A | 790mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 100V | - | Surface Mount | DO-214AC, SMA | SMA | -55°C ~ 150°C |
||
Diodes Incorporated |
DIODE GEN PURP 400V 1A DO41
|
封装: DO-204AL, DO-41, Axial |
库存2,035,314 |
|
400V | 1A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 400V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 150°C |
||
Microchip Technology |
DIODE GEN PURP 500V 70A DO5
|
封装: - |
Request a Quote |
|
500 V | 70A | 1.25 V @ 200 A | Standard Recovery >500ns, > 200mA (Io) | - | 25 µA @ 500 V | - | Stud Mount | DO-203AB, DO-5, Stud | DO-5 (DO-203AB) | -65°C ~ 200°C |
||
Micro Commercial Co |
DIODE SCHOTTKY 70V 70MA SOD323
|
封装: - |
库存52,536 |
|
70 V | 70mA | 1 V @ 15 mA | Small Signal =< 200mA (Io), Any Speed | 5 ns | 100 nA @ 50 V | 2pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | SOD-323 | -55°C ~ 125°C |
||
Micro Commercial Co |
DIODE GP 800V 2A DO214AA HSMB
|
封装: - |
Request a Quote |
|
800 V | 2A | - | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 5 µA @ 800 V | 40pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA, HSMB | -50°C ~ 150°C |
||
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 1A SOD123W
|
封装: - |
Request a Quote |
|
600 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 1 µA @ 600 V | - | Surface Mount | SOD-123W | SOD-123W | -55°C ~ 175°C |
||
Panjit International Inc. |
DIODE SCHOTTKY 90V 1A DO41
|
封装: - |
Request a Quote |
|
90 V | 1A | 800 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 90 V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
||
Vishay General Semiconductor - Diodes Division |
DIODE SCHOTTKY 100V 3A DO221AC
|
封装: - |
库存30,693 |
|
100 V | 3A | 720 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 100 V | 364pF @ 4V, 1MHz | Surface Mount | DO-221AC, SMA Flat Leads | DO-221AC (SlimSMA) | -40°C ~ 175°C |
||
Micro Commercial Co |
Interface
|
封装: - |
Request a Quote |
|
200 V | 6A | 940 mV @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 2 µA @ 200 V | 140pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277 | -65°C ~ 175°C |
||
Microchip Technology |
DIODE GEN PURP 600V 3A B AXIAL
|
封装: - |
Request a Quote |
|
600 V | 3A | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 600 V | - | Through Hole | B, Axial | B, Axial | -65°C ~ 175°C |