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BSS123LT1G

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付款方式：

Part Number

BSS123LT1G

Manufacturer

ON Semiconductor

Description

MOSFET N-CH 100V 170MA SOT-23

Lifecycle

Active

RoHS

No RoHS Information

EDA/CAD Models

BSS123LT1G PCB Footprint and Symbol

Warehouses

USA, Europe, China, Hong Kong SAR

Estimated Delivery

Sep 28 - Oct 3 (Choose Expedited Shipping)

Warranty

Up to 1 year [Limitety]*

1
In Stock:237163 pcs

运送服务：

BSS123LT1G 规格

Current - Continuous Drain (Id) @ 25°C
170mA (Ta)
Drain to Source Voltage (Vdss)
100V
Drive Voltage (Max Rds On, Min Rds On)
10V
FET Feature
-
FET Type
N-Channel
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
20pF @ 25V
Manufacturer
ON Semiconductor
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max)
225mW (Ta)
Rds On (Max) @ Id, Vgs
6Ohm @ 100mA, 10V
Series
-
Supplier Device Package
SOT-23-3 (TO-236)
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±20V
Vgs(th) (Max) @ Id
2.6V @ 1mA

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BSS123LT1G

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