JFETs (1056)

Series:

-

FET Type:

P-Channel

Voltage - Breakdown (V(BR)GSS):

30V

Drain to Source Voltage (Vdss):

-

Current - Drain (Idss) @ Vds (Vgs=0):

5mA @ 20V

Current Drain (Id) - Max:

-

Voltage - Cutoff (VGS off) @ Id:

5V @ 1µA

Input Capacitance (Ciss) (Max) @ Vds:

45pF @ 15V

Resistance - RDS(On):

150 Ohm

Power - Max:

350mW

Operating Temperature:

-

Mounting Type:

Through Hole

Package / Case:

TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package:

TO-92-3

Series:

-

FET Type:

P-Channel

Voltage - Breakdown (V(BR)GSS):

30V

Drain to Source Voltage (Vdss):

-

Current - Drain (Idss) @ Vds (Vgs=0):

5mA @ 20V

Current Drain (Id) - Max:

-

Voltage - Cutoff (VGS off) @ Id:

5V @ 1µA

Input Capacitance (Ciss) (Max) @ Vds:

45pF @ 15V

Resistance - RDS(On):

150 Ohm

Power - Max:

350mW

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Through Hole

Package / Case:

TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package:

TO-92-3

Series:

-

FET Type:

P-Channel

Voltage - Breakdown (V(BR)GSS):

30V

Drain to Source Voltage (Vdss):

-

Current - Drain (Idss) @ Vds (Vgs=0):

7mA @ 15V

Current Drain (Id) - Max:

-

Voltage - Cutoff (VGS off) @ Id:

3V @ 10nA

Input Capacitance (Ciss) (Max) @ Vds:

-

Resistance - RDS(On):

125 Ohm

Power - Max:

350mW

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Through Hole

Package / Case:

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package:

TO-92-3

Series:

-

FET Type:

P-Channel

Voltage - Breakdown (V(BR)GSS):

30V

Drain to Source Voltage (Vdss):

-

Current - Drain (Idss) @ Vds (Vgs=0):

1.5mA @ 15V

Current Drain (Id) - Max:

-

Voltage - Cutoff (VGS off) @ Id:

800mV @ 10nA

Input Capacitance (Ciss) (Max) @ Vds:

-

Resistance - RDS(On):

300 Ohm

Power - Max:

350mW

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Through Hole

Package / Case:

TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package:

TO-92-3

Series:

-

FET Type:

P-Channel

Voltage - Breakdown (V(BR)GSS):

30V

Drain to Source Voltage (Vdss):

-

Current - Drain (Idss) @ Vds (Vgs=0):

2mA @ 15V

Current Drain (Id) - Max:

-

Voltage - Cutoff (VGS off) @ Id:

1V @ 10nA

Input Capacitance (Ciss) (Max) @ Vds:

-

Resistance - RDS(On):

250 Ohm

Power - Max:

350mW

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Through Hole

Package / Case:

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package:

TO-92-3

Series:

-

FET Type:

P-Channel

Voltage - Breakdown (V(BR)GSS):

30V

Drain to Source Voltage (Vdss):

-

Current - Drain (Idss) @ Vds (Vgs=0):

2mA @ 15V

Current Drain (Id) - Max:

-

Voltage - Cutoff (VGS off) @ Id:

1V @ 10nA

Input Capacitance (Ciss) (Max) @ Vds:

-

Resistance - RDS(On):

250 Ohm

Power - Max:

350mW

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Through Hole

Package / Case:

TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package:

TO-92-3

Series:

-

FET Type:

P-Channel

Voltage - Breakdown (V(BR)GSS):

30V

Drain to Source Voltage (Vdss):

-

Current - Drain (Idss) @ Vds (Vgs=0):

7mA @ 15V

Current Drain (Id) - Max:

-

Voltage - Cutoff (VGS off) @ Id:

3V @ 10nA

Input Capacitance (Ciss) (Max) @ Vds:

-

Resistance - RDS(On):

125 Ohm

Power - Max:

350mW

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Through Hole

Package / Case:

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package:

TO-92-3

Series:

-

FET Type:

P-Channel

Voltage - Breakdown (V(BR)GSS):

30V

Drain to Source Voltage (Vdss):

-

Current - Drain (Idss) @ Vds (Vgs=0):

1.5mA @ 15V

Current Drain (Id) - Max:

-

Voltage - Cutoff (VGS off) @ Id:

800mV @ 10nA

Input Capacitance (Ciss) (Max) @ Vds:

-

Resistance - RDS(On):

300 Ohm

Power - Max:

350mW

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Through Hole

Package / Case:

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package:

TO-92-3

Series:

-

FET Type:

P-Channel

Voltage - Breakdown (V(BR)GSS):

30V

Drain to Source Voltage (Vdss):

-

Current - Drain (Idss) @ Vds (Vgs=0):

1.5mA @ 15V

Current Drain (Id) - Max:

-

Voltage - Cutoff (VGS off) @ Id:

800mV @ 10nA

Input Capacitance (Ciss) (Max) @ Vds:

-

Resistance - RDS(On):

300 Ohm

Power - Max:

350mW

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Through Hole

Package / Case:

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package:

TO-92-3

Series:

-

FET Type:

P-Channel

Voltage - Breakdown (V(BR)GSS):

30V

Drain to Source Voltage (Vdss):

-

Current - Drain (Idss) @ Vds (Vgs=0):

7mA @ 15V

Current Drain (Id) - Max:

-

Voltage - Cutoff (VGS off) @ Id:

3V @ 10nA

Input Capacitance (Ciss) (Max) @ Vds:

-

Resistance - RDS(On):

125 Ohm

Power - Max:

350mW

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Through Hole

Package / Case:

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package:

TO-92-3