Logo

Bipolar (BJT) - Single (21899)

Records 0
Reset All
Records 21899
Page 37/2190
2N2369A

Part Number:

2N2369A

Manufacturer:

MICROSS/On Semiconductor

Description:

DIE TRANS NPN MED PWR HS SWITCH

  • Series:

    *

  • Transistor Type:

    -

  • Current - Collector (Ic) (Max):

    -

  • Voltage - Collector Emitter Breakdown (Max):

    -

  • Vce Saturation (Max) @ Ib, Ic:

    -

  • Current - Collector Cutoff (Max):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    -

  • Power - Max:

    -

  • Frequency - Transition:

    -

  • Operating Temperature:

    -

  • Mounting Type:

    Through Hole

  • Package / Case:

    -

  • Supplier Device Package:

    -

Stock:

415

1

Part Number:

2N2369A

Manufacturer:

Microsemi

Description:

TRANS NPN 15V TO18

  • Series:

    -

  • Transistor Type:

    NPN

  • Current - Collector (Ic) (Max):

    -

  • Voltage - Collector Emitter Breakdown (Max):

    15V

  • Vce Saturation (Max) @ Ib, Ic:

    450mV @ 10mA, 100mA

  • Current - Collector Cutoff (Max):

    400nA

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    20 @ 100mA, 1V

  • Power - Max:

    360mW

  • Frequency - Transition:

    -

  • Operating Temperature:

    -65°C ~ 200°C (TJ)

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-206AA, TO-18-3 Metal Can

  • Supplier Device Package:

    TO-18 (TO-206AA)

Stock:

1621

1

Part Number:

2N2369A

Manufacturer:

Central Semiconductor Corp

Description:

TRANS NPN 15V 0.2A TO-18

  • Series:

    -

  • Transistor Type:

    NPN

  • Current - Collector (Ic) (Max):

    200mA

  • Voltage - Collector Emitter Breakdown (Max):

    15V

  • Vce Saturation (Max) @ Ib, Ic:

    500mV @ 10mA, 100mA

  • Current - Collector Cutoff (Max):

    400nA (ICBO)

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    40 @ 10mA, 350mV

  • Power - Max:

    360mW

  • Frequency - Transition:

    500MHz

  • Operating Temperature:

    -65°C ~ 200°C (TJ)

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-206AA, TO-18-3 Metal Can

  • Supplier Device Package:

    TO-18

Stock:

5004

1

Part Number:

2N2369A

Manufacturer:

Fairchild/Micross Components

Description:

DIE TRANS NPN MED PWR HS SWITCH

  • Series:

    *

  • Transistor Type:

    -

  • Current - Collector (Ic) (Max):

    -

  • Voltage - Collector Emitter Breakdown (Max):

    -

  • Vce Saturation (Max) @ Ib, Ic:

    -

  • Current - Collector Cutoff (Max):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    -

  • Power - Max:

    -

  • Frequency - Transition:

    -

  • Operating Temperature:

    -

  • Mounting Type:

    -

  • Package / Case:

    -

  • Supplier Device Package:

    -

Stock:

42996

1

Part Number:

2N2369A-PBFREE

Manufacturer:

Central Semiconductor Corp

Description:

TRANS NPN 15V 0.2A TO18

  • Series:

    -

  • Transistor Type:

    NPN

  • Current - Collector (Ic) (Max):

    200 mA

  • Voltage - Collector Emitter Breakdown (Max):

    15 V

  • Vce Saturation (Max) @ Ib, Ic:

    500mV @ 10mA, 100mA

  • Current - Collector Cutoff (Max):

    400nA (ICBO)

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    40 @ 10mA, 350mV

  • Power - Max:

    360 mW

  • Frequency - Transition:

    500MHz

  • Operating Temperature:

    -65°C ~ 200°C (TJ)

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-206AA, TO-18-3 Metal Can

  • Supplier Device Package:

    TO-18

Stock:

1320

1

Part Number:

2N2369AU

Manufacturer:

Microsemi

Description:

TRANS NPN 15V SMD

  • Series:

    -

  • Transistor Type:

    NPN

  • Current - Collector (Ic) (Max):

    -

  • Voltage - Collector Emitter Breakdown (Max):

    15V

  • Vce Saturation (Max) @ Ib, Ic:

    450mV @ 10mA, 100mA

  • Current - Collector Cutoff (Max):

    400nA

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    20 @ 100mA, 1V

  • Power - Max:

    500mW

  • Frequency - Transition:

    -

  • Operating Temperature:

    -65°C ~ 200°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    -

  • Supplier Device Package:

    SMD

Stock:

110

1

Part Number:

2N2369AUA

Manufacturer:

Microsemi

Description:

TRANS NPN 15V SMD

  • Series:

    -

  • Transistor Type:

    NPN

  • Current - Collector (Ic) (Max):

    -

  • Voltage - Collector Emitter Breakdown (Max):

    15V

  • Vce Saturation (Max) @ Ib, Ic:

    450mV @ 10mA, 100mA

  • Current - Collector Cutoff (Max):

    400nA

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    20 @ 100mA, 1V

  • Power - Max:

    360mW

  • Frequency - Transition:

    -

  • Operating Temperature:

    -65°C ~ 200°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    4-SMD

  • Supplier Device Package:

    SMD

Stock:

179

1

Part Number:

2N2369AUA-TR

Manufacturer:

Microchip Technology

Description:

TRANS NPN 15V SMD

  • Series:

    -

  • Transistor Type:

    NPN

  • Current - Collector (Ic) (Max):

    -

  • Voltage - Collector Emitter Breakdown (Max):

    15 V

  • Vce Saturation (Max) @ Ib, Ic:

    450mV @ 10mA, 100mA

  • Current - Collector Cutoff (Max):

    400nA

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    20 @ 100mA, 1V

  • Power - Max:

    360 mW

  • Frequency - Transition:

    -

  • Operating Temperature:

    -65°C ~ 200°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    4-SMD, No Lead

  • Supplier Device Package:

    UA

Stock:

0

1

Part Number:

2N2369AUB

Manufacturer:

Microsemi

Description:

TRANS NPN 15V SMD

  • Series:

    -

  • Transistor Type:

    NPN

  • Current - Collector (Ic) (Max):

    -

  • Voltage - Collector Emitter Breakdown (Max):

    15V

  • Vce Saturation (Max) @ Ib, Ic:

    450mV @ 10mA, 100mA

  • Current - Collector Cutoff (Max):

    400nA

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    20 @ 100mA, 1V

  • Power - Max:

    360mW

  • Frequency - Transition:

    -

  • Operating Temperature:

    -65°C ~ 200°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    4-SMD

  • Supplier Device Package:

    SMD

Stock:

137

1

Part Number:

2N2369AUBC

Manufacturer:

Microchip Technology

Description:

SMALL-SIGNAL BJT

  • Series:

    -

  • Transistor Type:

    NPN

  • Current - Collector (Ic) (Max):

    -

  • Voltage - Collector Emitter Breakdown (Max):

    15 V

  • Vce Saturation (Max) @ Ib, Ic:

    450mV @ 10mA, 100mA

  • Current - Collector Cutoff (Max):

    400nA

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    20 @ 100mA, 1V

  • Power - Max:

    360 mW

  • Frequency - Transition:

    -

  • Operating Temperature:

    -65°C ~ 200°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    3-SMD, No Lead

  • Supplier Device Package:

    UBC

Stock:

0

1

获取最新资讯

每日获取来自全球众多供应商的最新优惠资讯