Bipolar (BJT) - RF (1753)

Series:

-

Transistor Type:

NPN

Voltage - Collector Emitter Breakdown (Max):

65V

Frequency - Transition:

1.025GHz ~ 1.15GHz

Noise Figure (dB Typ @ f):

-

Gain:

8.4dB

Power - Max:

292W

DC Current Gain (hFE) (Min) @ Ic, Vce:

5 @ 100mA, 5V

Current - Collector (Ic) (Max):

10A

Operating Temperature:

200°C (TJ)

Mounting Type:

Chassis Mount

Package / Case:

M115

Supplier Device Package:

M115

Series:

-

Transistor Type:

NPN

Voltage - Collector Emitter Breakdown (Max):

45V

Frequency - Transition:

960MHz ~ 1.215GHz

Noise Figure (dB Typ @ f):

-

Gain:

9.5dB

Power - Max:

21.9W

DC Current Gain (hFE) (Min) @ Ic, Vce:

-

Current - Collector (Ic) (Max):

1A

Operating Temperature:

200°C (TJ)

Mounting Type:

Chassis Mount

Package / Case:

M115

Supplier Device Package:

M115

Series:

-

Transistor Type:

NPN

Voltage - Collector Emitter Breakdown (Max):

35V

Frequency - Transition:

175MHz

Noise Figure (dB Typ @ f):

-

Gain:

7.6dB

Power - Max:

60W

DC Current Gain (hFE) (Min) @ Ic, Vce:

20 @ 500mA, 5V

Current - Collector (Ic) (Max):

5A

Operating Temperature:

200°C (TJ)

Mounting Type:

Chassis Mount

Package / Case:

M113

Supplier Device Package:

M113

Series:

-

Transistor Type:

NPN

Voltage - Collector Emitter Breakdown (Max):

35V

Frequency - Transition:

150MHz

Noise Figure (dB Typ @ f):

-

Gain:

10dB

Power - Max:

13W

DC Current Gain (hFE) (Min) @ Ic, Vce:

10 @ 200mA, 5V

Current - Collector (Ic) (Max):

1A

Operating Temperature:

200°C (TJ)

Mounting Type:

Chassis Mount

Package / Case:

M113

Supplier Device Package:

M113

Series:

-

Transistor Type:

NPN

Voltage - Collector Emitter Breakdown (Max):

75V

Frequency - Transition:

960MHz ~ 1.215GHz

Noise Figure (dB Typ @ f):

-

Gain:

9dB

Power - Max:

2500W

DC Current Gain (hFE) (Min) @ Ic, Vce:

20 @ 1A, 5V

Current - Collector (Ic) (Max):

50A

Operating Temperature:

200°C (TJ)

Mounting Type:

Chassis Mount

Package / Case:

55ST

Supplier Device Package:

55ST

Series:

-

Transistor Type:

NPN

Voltage - Collector Emitter Breakdown (Max):

65V

Frequency - Transition:

1.03GHz

Noise Figure (dB Typ @ f):

-

Gain:

8dB ~ 9dB

Power - Max:

1944W

DC Current Gain (hFE) (Min) @ Ic, Vce:

20 @ 5A, 5V

Current - Collector (Ic) (Max):

50A

Operating Temperature:

230°C (TJ)

Mounting Type:

Chassis Mount

Package / Case:

55SM

Supplier Device Package:

55SM

Series:

-

Transistor Type:

NPN

Voltage - Collector Emitter Breakdown (Max):

60V

Frequency - Transition:

470MHz ~ 860MHz

Noise Figure (dB Typ @ f):

-

Gain:

8.5dB ~ 9.5dB

Power - Max:

290W

DC Current Gain (hFE) (Min) @ Ic, Vce:

20 @ 1A, 5V

Current - Collector (Ic) (Max):

15A

Operating Temperature:

200°C (TJ)

Mounting Type:

Chassis Mount

Package / Case:

55RT

Supplier Device Package:

55RT

Series:

-

Transistor Type:

NPN

Voltage - Collector Emitter Breakdown (Max):

50V

Frequency - Transition:

960MHz ~ 1.215GHz

Noise Figure (dB Typ @ f):

-

Gain:

7dB ~ 8dB

Power - Max:

175W

DC Current Gain (hFE) (Min) @ Ic, Vce:

-

Current - Collector (Ic) (Max):

2A

Operating Temperature:

200°C (TJ)

Mounting Type:

Chassis Mount

Package / Case:

55LT

Supplier Device Package:

55LT

Series:

-

Transistor Type:

NPN

Voltage - Collector Emitter Breakdown (Max):

65V

Frequency - Transition:

1.03GHz ~ 1.09GHz

Noise Figure (dB Typ @ f):

-

Gain:

6.7dB

Power - Max:

2050W

DC Current Gain (hFE) (Min) @ Ic, Vce:

10 @ 1A, 5V

Current - Collector (Ic) (Max):

55A

Operating Temperature:

200°C (TJ)

Mounting Type:

Chassis Mount

Package / Case:

55KT

Supplier Device Package:

55KT

Series:

-

Transistor Type:

NPN

Voltage - Collector Emitter Breakdown (Max):

65V

Frequency - Transition:

960MHz ~ 1.215GHz

Noise Figure (dB Typ @ f):

-

Gain:

6.6dB

Power - Max:

1166W

DC Current Gain (hFE) (Min) @ Ic, Vce:

10 @ 1mA, 5V

Current - Collector (Ic) (Max):

20A

Operating Temperature:

200°C (TJ)

Mounting Type:

Chassis Mount

Package / Case:

55KT

Supplier Device Package:

55KT