Bipolar (BJT) - RF (1753)

Series:

-

Transistor Type:

NPN

Voltage - Collector Emitter Breakdown (Max):

65V

Frequency - Transition:

1.025GHz ~ 1.15GHz

Noise Figure (dB Typ @ f):

-

Gain:

9dB

Power - Max:

87.5W

DC Current Gain (hFE) (Min) @ Ic, Vce:

-

Current - Collector (Ic) (Max):

2.6A

Operating Temperature:

200°C (TJ)

Mounting Type:

Chassis Mount

Package / Case:

M115

Supplier Device Package:

M115

Series:

-

Transistor Type:

NPN

Voltage - Collector Emitter Breakdown (Max):

60V

Frequency - Transition:

225MHz ~ 400MHz

Noise Figure (dB Typ @ f):

-

Gain:

7dB ~ 8.5dB

Power - Max:

270W

DC Current Gain (hFE) (Min) @ Ic, Vce:

20 @ 1A, 5V

Current - Collector (Ic) (Max):

16A

Operating Temperature:

200°C (TJ)

Mounting Type:

Chassis Mount

Package / Case:

55JT

Supplier Device Package:

55JT

Series:

-

Transistor Type:

NPN

Voltage - Collector Emitter Breakdown (Max):

65V

Frequency - Transition:

100MHz ~ 500MHz

Noise Figure (dB Typ @ f):

-

Gain:

8.5dB ~ 10dB

Power - Max:

140W

DC Current Gain (hFE) (Min) @ Ic, Vce:

10 @ 1A, 5V

Current - Collector (Ic) (Max):

7A

Operating Temperature:

200°C (TJ)

Mounting Type:

Chassis Mount

Package / Case:

55JT

Supplier Device Package:

55JT

Series:

-

Transistor Type:

NPN

Voltage - Collector Emitter Breakdown (Max):

65V

Frequency - Transition:

-

Noise Figure (dB Typ @ f):

-

Gain:

8.5dB

Power - Max:

1458W

DC Current Gain (hFE) (Min) @ Ic, Vce:

20 @ 5A, 5V

Current - Collector (Ic) (Max):

40A

Operating Temperature:

230°C (TJ)

Mounting Type:

Chassis Mount

Package / Case:

55SM

Supplier Device Package:

55SM

Series:

-

Transistor Type:

NPN

Voltage - Collector Emitter Breakdown (Max):

42V

Frequency - Transition:

2.3GHz

Noise Figure (dB Typ @ f):

-

Gain:

8dB

Power - Max:

20.5W

DC Current Gain (hFE) (Min) @ Ic, Vce:

10 @ 500mA, 5V

Current - Collector (Ic) (Max):

1A

Operating Temperature:

200°C (TJ)

Mounting Type:

Chassis Mount

Package / Case:

55BT

Supplier Device Package:

55BT

Series:

-

Transistor Type:

NPN

Voltage - Collector Emitter Breakdown (Max):

45V

Frequency - Transition:

2.3GHz

Noise Figure (dB Typ @ f):

-

Gain:

8dB

Power - Max:

5.6W

DC Current Gain (hFE) (Min) @ Ic, Vce:

10 @ 100mA, 5V

Current - Collector (Ic) (Max):

300mA

Operating Temperature:

200°C (TJ)

Mounting Type:

Chassis Mount

Package / Case:

55BT

Supplier Device Package:

55BT

Series:

-

Transistor Type:

NPN

Voltage - Collector Emitter Breakdown (Max):

50V

Frequency - Transition:

2GHz

Noise Figure (dB Typ @ f):

-

Gain:

8.5dB

Power - Max:

12W

DC Current Gain (hFE) (Min) @ Ic, Vce:

10 @ 100mA, 5V

Current - Collector (Ic) (Max):

500mA

Operating Temperature:

200°C (TJ)

Mounting Type:

Chassis Mount

Package / Case:

55BT-1

Supplier Device Package:

55BT-1

Series:

-

Transistor Type:

NPN

Voltage - Collector Emitter Breakdown (Max):

50V

Frequency - Transition:

2GHz

Noise Figure (dB Typ @ f):

-

Gain:

9.5dB

Power - Max:

5W

DC Current Gain (hFE) (Min) @ Ic, Vce:

20 @ 100mA, 5V

Current - Collector (Ic) (Max):

250mA

Operating Temperature:

-

Mounting Type:

Chassis Mount

Package / Case:

55BT

Supplier Device Package:

55BT

Series:

-

Transistor Type:

NPN

Voltage - Collector Emitter Breakdown (Max):

65V

Frequency - Transition:

1.025GHz ~ 1.15GHz

Noise Figure (dB Typ @ f):

-

Gain:

10dB

Power - Max:

87.5W

DC Current Gain (hFE) (Min) @ Ic, Vce:

10 @ 100mA, 5V

Current - Collector (Ic) (Max):

1.5A

Operating Temperature:

-

Mounting Type:

Chassis Mount

Package / Case:

M115

Supplier Device Package:

M115

Series:

-

Transistor Type:

NPN

Voltage - Collector Emitter Breakdown (Max):

65V

Frequency - Transition:

1.025GHz ~ 1.15GHz

Noise Figure (dB Typ @ f):

-

Gain:

10dB

Power - Max:

87.5W

DC Current Gain (hFE) (Min) @ Ic, Vce:

-

Current - Collector (Ic) (Max):

1.5A

Operating Temperature:

200°C (TJ)

Mounting Type:

Chassis Mount

Package / Case:

M105

Supplier Device Package:

M105