Bipolar (BJT) - RF (1753)

Series:

-

Transistor Type:

NPN

Voltage - Collector Emitter Breakdown (Max):

12V

Frequency - Transition:

6GHz

Noise Figure (dB Typ @ f):

1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz

Gain:

9.5dB ~ 14.5dB

Power - Max:

300mW

DC Current Gain (hFE) (Min) @ Ic, Vce:

70 @ 30mA, 8V

Current - Collector (Ic) (Max):

90mA

Operating Temperature:

150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

TO-236-3, SC-59, SOT-23-3

Supplier Device Package:

PG-SOT23-3

Series:

-

Transistor Type:

NPN

Voltage - Collector Emitter Breakdown (Max):

12V

Frequency - Transition:

8GHz

Noise Figure (dB Typ @ f):

0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz

Gain:

12dB ~ 18dB

Power - Max:

250mW

DC Current Gain (hFE) (Min) @ Ic, Vce:

70 @ 10mA, 8V

Current - Collector (Ic) (Max):

35mA

Operating Temperature:

150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

TO-236-3, SC-59, SOT-23-3

Supplier Device Package:

PG-SOT23-3

Series:

-

Transistor Type:

NPN

Voltage - Collector Emitter Breakdown (Max):

12V

Frequency - Transition:

8GHz

Noise Figure (dB Typ @ f):

1dB ~ 1.6dB @ 900MHz ~ 1.8GHz

Gain:

10dB ~ 15dB

Power - Max:

580mW

DC Current Gain (hFE) (Min) @ Ic, Vce:

70 @ 30mA, 8V

Current - Collector (Ic) (Max):

80mA

Operating Temperature:

150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

TO-236-3, SC-59, SOT-23-3

Supplier Device Package:

PG-SOT23-3

Series:

-

Transistor Type:

NPN

Voltage - Collector Emitter Breakdown (Max):

12V

Frequency - Transition:

8GHz

Noise Figure (dB Typ @ f):

0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz

Gain:

17.5dB

Power - Max:

450mW

DC Current Gain (hFE) (Min) @ Ic, Vce:

70 @ 15mA, 8V

Current - Collector (Ic) (Max):

65mA

Operating Temperature:

150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

TO-236-3, SC-59, SOT-23-3

Supplier Device Package:

PG-SOT23-3

Series:

-

Transistor Type:

NPN

Voltage - Collector Emitter Breakdown (Max):

15V

Frequency - Transition:

600MHz

Noise Figure (dB Typ @ f):

6dB @ 60MHz

Gain:

15dB

Power - Max:

225mW

DC Current Gain (hFE) (Min) @ Ic, Vce:

20 @ 3mA, 1V

Current - Collector (Ic) (Max):

50mA

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

TO-236-3, SC-59, SOT-23-3

Supplier Device Package:

SOT-23-3 (TO-236)

Series:

-

Transistor Type:

NPN

Voltage - Collector Emitter Breakdown (Max):

25V

Frequency - Transition:

650MHz

Noise Figure (dB Typ @ f):

-

Gain:

-

Power - Max:

350mW

DC Current Gain (hFE) (Min) @ Ic, Vce:

60 @ 4mA, 10V

Current - Collector (Ic) (Max):

-

Operating Temperature:

-

Mounting Type:

Surface Mount

Package / Case:

TO-236-3, SC-59, SOT-23-3

Supplier Device Package:

SOT-23-3

Series:

-

Transistor Type:

NPN

Voltage - Collector Emitter Breakdown (Max):

25V

Frequency - Transition:

650MHz

Noise Figure (dB Typ @ f):

-

Gain:

-

Power - Max:

350mW

DC Current Gain (hFE) (Min) @ Ic, Vce:

60 @ 4mA, 10V

Current - Collector (Ic) (Max):

-

Operating Temperature:

150°C (TJ)

Mounting Type:

Through Hole

Package / Case:

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package:

TO-92-3

Series:

-

Transistor Type:

3 NPN + 2 PNP

Voltage - Collector Emitter Breakdown (Max):

12V, 15V

Frequency - Transition:

8GHz, 5.5GHz

Noise Figure (dB Typ @ f):

3.5dB @ 1GHz

Gain:

-

Power - Max:

150mW

DC Current Gain (hFE) (Min) @ Ic, Vce:

40 @ 10mA, 2V / 20 @ 10mA, 2V

Current - Collector (Ic) (Max):

65mA

Operating Temperature:

150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

16-SOIC (0.154", 3.90mm Width)

Supplier Device Package:

16-SOIC

Series:

-

Transistor Type:

NPN

Voltage - Collector Emitter Breakdown (Max):

15V

Frequency - Transition:

1.1GHz

Noise Figure (dB Typ @ f):

-

Gain:

-

Power - Max:

400mW

DC Current Gain (hFE) (Min) @ Ic, Vce:

97 @ 1mA, 5V

Current - Collector (Ic) (Max):

50mA

Operating Temperature:

150°C (TJ)

Mounting Type:

Through Hole

Package / Case:

TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package:

TO-92-3

Series:

-

Transistor Type:

NPN

Voltage - Collector Emitter Breakdown (Max):

25V

Frequency - Transition:

650MHz

Noise Figure (dB Typ @ f):

-

Gain:

-

Power - Max:

350mW

DC Current Gain (hFE) (Min) @ Ic, Vce:

60 @ 4mA, 10V

Current - Collector (Ic) (Max):

-

Operating Temperature:

150°C (TJ)

Mounting Type:

Through Hole

Package / Case:

TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package:

TO-92-3