Bipolar (BJT) - RF (1753)

Series:

-

Transistor Type:

5 PNP

Voltage - Collector Emitter Breakdown (Max):

15V

Frequency - Transition:

5.5GHz

Noise Figure (dB Typ @ f):

3.5dB @ 1GHz

Gain:

-

Power - Max:

150mW

DC Current Gain (hFE) (Min) @ Ic, Vce:

20 @ 10mA, 2V

Current - Collector (Ic) (Max):

65mA

Operating Temperature:

150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

16-SOIC (0.154", 3.90mm Width)

Supplier Device Package:

16-SOIC

Series:

-

Transistor Type:

5 PNP

Voltage - Collector Emitter Breakdown (Max):

15V

Frequency - Transition:

5.5GHz

Noise Figure (dB Typ @ f):

3.5dB @ 1GHz

Gain:

-

Power - Max:

150mW

DC Current Gain (hFE) (Min) @ Ic, Vce:

20 @ 10mA, 2V

Current - Collector (Ic) (Max):

65mA

Operating Temperature:

150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

16-SOIC (0.154", 3.90mm Width)

Supplier Device Package:

16-SOIC

Series:

-

Transistor Type:

5 NPN

Voltage - Collector Emitter Breakdown (Max):

15V

Frequency - Transition:

1.15GHz

Noise Figure (dB Typ @ f):

3.5dB @ 100MHz

Gain:

27dB ~ 30dB

Power - Max:

85mW

DC Current Gain (hFE) (Min) @ Ic, Vce:

35 @ 5mA, 6V

Current - Collector (Ic) (Max):

20mA

Operating Temperature:

150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

16-SOIC (0.154", 3.90mm Width)

Supplier Device Package:

16-SOIC

Series:

-

Transistor Type:

5 PNP

Voltage - Collector Emitter Breakdown (Max):

15V

Frequency - Transition:

5.5GHz

Noise Figure (dB Typ @ f):

3.5dB @ 1GHz

Gain:

-

Power - Max:

150mW

DC Current Gain (hFE) (Min) @ Ic, Vce:

20 @ 10mA, 2V

Current - Collector (Ic) (Max):

65mA

Operating Temperature:

175°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

16-VFQFN Exposed Pad

Supplier Device Package:

16-QFN (3x3)

Series:

-

Transistor Type:

NPN

Voltage - Collector Emitter Breakdown (Max):

15V

Frequency - Transition:

600MHz

Noise Figure (dB Typ @ f):

6dB @ 60MHz

Gain:

15dB

Power - Max:

350mW

DC Current Gain (hFE) (Min) @ Ic, Vce:

20 @ 3mA, 1V

Current - Collector (Ic) (Max):

50mA

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Through Hole

Package / Case:

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package:

TO-92-3

Series:

-

Transistor Type:

NPN

Voltage - Collector Emitter Breakdown (Max):

12V

Frequency - Transition:

2GHz

Noise Figure (dB Typ @ f):

5dB @ 200MHz

Gain:

15dB

Power - Max:

350mW

DC Current Gain (hFE) (Min) @ Ic, Vce:

25 @ 3mA, 1V

Current - Collector (Ic) (Max):

50mA

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Through Hole

Package / Case:

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package:

TO-92-3

Series:

-

Transistor Type:

NPN

Voltage - Collector Emitter Breakdown (Max):

12V

Frequency - Transition:

2GHz

Noise Figure (dB Typ @ f):

5dB @ 200MHz

Gain:

15dB

Power - Max:

350mW

DC Current Gain (hFE) (Min) @ Ic, Vce:

25 @ 3mA, 1V

Current - Collector (Ic) (Max):

50mA

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Through Hole

Package / Case:

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package:

TO-92-3

Series:

-

Transistor Type:

NPN

Voltage - Collector Emitter Breakdown (Max):

12V

Frequency - Transition:

2GHz

Noise Figure (dB Typ @ f):

5dB @ 200MHz

Gain:

15dB

Power - Max:

350mW

DC Current Gain (hFE) (Min) @ Ic, Vce:

25 @ 3mA, 1V

Current - Collector (Ic) (Max):

50mA

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Through Hole

Package / Case:

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package:

TO-92-3

Series:

-

Transistor Type:

NPN

Voltage - Collector Emitter Breakdown (Max):

15V

Frequency - Transition:

1.5GHz

Noise Figure (dB Typ @ f):

-

Gain:

14dB ~ 26dB

Power - Max:

350mW

DC Current Gain (hFE) (Min) @ Ic, Vce:

20 @ 8mA, 10V

Current - Collector (Ic) (Max):

50mA

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Through Hole

Package / Case:

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package:

TO-92-3

Series:

-

Transistor Type:

NPN

Voltage - Collector Emitter Breakdown (Max):

15V

Frequency - Transition:

1.5GHz

Noise Figure (dB Typ @ f):

-

Gain:

14dB ~ 26dB

Power - Max:

350mW

DC Current Gain (hFE) (Min) @ Ic, Vce:

20 @ 8mA, 10V

Current - Collector (Ic) (Max):

50mA

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Through Hole

Package / Case:

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package:

TO-92-3