Bipolar (BJT) - Arrays (2018)

Series:

-

Transistor Type:

4 NPN Darlington (Quad)

Current - Collector (Ic) (Max):

4A

Voltage - Collector Emitter Breakdown (Max):

120V

Vce Saturation (Max) @ Ib, Ic:

1.5V @ 2mA, 2A

Current - Collector Cutoff (Max):

10µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:

2000 @ 2A, 2V

Power - Max:

5W

Frequency - Transition:

-

Operating Temperature:

150°C (TJ)

Mounting Type:

Through Hole

Package / Case:

12-SIP

Supplier Device Package:

12-SIP w/fin

Series:

-

Transistor Type:

4 PNP Darlington (Quad)

Current - Collector (Ic) (Max):

4A

Voltage - Collector Emitter Breakdown (Max):

60V

Vce Saturation (Max) @ Ib, Ic:

1.5V @ 6mA, 3A

Current - Collector Cutoff (Max):

10µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:

2000 @ 3A, 4V

Power - Max:

4W, 20W

Frequency - Transition:

-

Operating Temperature:

150°C (TJ)

Mounting Type:

Through Hole

Package / Case:

12-SIP

Supplier Device Package:

12-SIP

Series:

-

Transistor Type:

4 NPN Darlington (Quad)

Current - Collector (Ic) (Max):

4A

Voltage - Collector Emitter Breakdown (Max):

100V

Vce Saturation (Max) @ Ib, Ic:

1.5V @ 10mA, 2A

Current - Collector Cutoff (Max):

10µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:

2000 @ 2A, 4V

Power - Max:

5W

Frequency - Transition:

-

Operating Temperature:

150°C (TJ)

Mounting Type:

Through Hole

Package / Case:

12-SIP

Supplier Device Package:

12-SIP w/fin

Series:

-

Transistor Type:

3 NPN, 3 PNP Darlington (3-Phase Bridge)

Current - Collector (Ic) (Max):

2A

Voltage - Collector Emitter Breakdown (Max):

60V

Vce Saturation (Max) @ Ib, Ic:

1.5V @ 2mA, 1A

Current - Collector Cutoff (Max):

100µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:

2000 @ 1A, 4V

Power - Max:

4W

Frequency - Transition:

50MHz

Operating Temperature:

150°C (TJ)

Mounting Type:

Through Hole

Package / Case:

12-SIP

Supplier Device Package:

12-SIP

Series:

-

Transistor Type:

3 PNP

Current - Collector (Ic) (Max):

3A

Voltage - Collector Emitter Breakdown (Max):

50V

Vce Saturation (Max) @ Ib, Ic:

1V @ 40mA, 2A

Current - Collector Cutoff (Max):

100µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:

100 @ 1A, 4V

Power - Max:

3W, 15W

Frequency - Transition:

-

Operating Temperature:

150°C (TJ)

Mounting Type:

Through Hole

Package / Case:

8-SIP

Supplier Device Package:

8-SIP

Series:

-

Transistor Type:

NPN, PNP

Current - Collector (Ic) (Max):

3A

Voltage - Collector Emitter Breakdown (Max):

400V

Vce Saturation (Max) @ Ib, Ic:

500mV @ 200mA, 1A

Current - Collector Cutoff (Max):

100µA

DC Current Gain (hFE) (Min) @ Ic, Vce:

18 @ 700mA, 5V

Power - Max:

3W

Frequency - Transition:

-

Operating Temperature:

150°C (TJ)

Mounting Type:

Through Hole

Package / Case:

8-DIP (0.300", 7.62mm)

Supplier Device Package:

8-DIP

Series:

Automotive, AEC-Q101

Transistor Type:

NPN, PNP

Current - Collector (Ic) (Max):

-

Voltage - Collector Emitter Breakdown (Max):

20V

Vce Saturation (Max) @ Ib, Ic:

300mV @ 125mA, 4.5A

Current - Collector Cutoff (Max):

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:

300 @ 200mA, 2V

Power - Max:

1.5W

Frequency - Transition:

100MHz

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

8-WDFN Exposed Pad

Supplier Device Package:

W-DFN3020-8

Series:

-

Transistor Type:

2 NPN, 2 PNP

Current - Collector (Ic) (Max):

1A

Voltage - Collector Emitter Breakdown (Max):

30V

Vce Saturation (Max) @ Ib, Ic:

1.4V @ 30mA, 300mA

Current - Collector Cutoff (Max):

30nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:

30 @ 300mA, 10V

Power - Max:

1W

Frequency - Transition:

200MHz

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

16-SOIC (0.154", 3.90mm Width)

Supplier Device Package:

16-SOIC

Series:

-

Transistor Type:

7 NPN Darlington

Current - Collector (Ic) (Max):

500mA

Voltage - Collector Emitter Breakdown (Max):

100V

Vce Saturation (Max) @ Ib, Ic:

1.6V @ 500µA, 350mA

Current - Collector Cutoff (Max):

-

DC Current Gain (hFE) (Min) @ Ic, Vce:

-

Power - Max:

-

Frequency - Transition:

-

Operating Temperature:

150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

16-SOIC (0.209", 5.30mm Width)

Supplier Device Package:

16-SO

Series:

-

Transistor Type:

2 NPN (Dual)

Current - Collector (Ic) (Max):

300mA

Voltage - Collector Emitter Breakdown (Max):

20V

Vce Saturation (Max) @ Ib, Ic:

100mV @ 3mA, 30mA

Current - Collector Cutoff (Max):

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:

500 @ 4mA, 2V

Power - Max:

300mW

Frequency - Transition:

80MHz

Operating Temperature:

150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

SOT-23-6

Supplier Device Package:

MINI6-G1