Bipolar (BJT) - Arrays (2018)

Series:

-

Transistor Type:

2 NPN (Dual)

Current - Collector (Ic) (Max):

2A

Voltage - Collector Emitter Breakdown (Max):

45V

Vce Saturation (Max) @ Ib, Ic:

500mV @ 5mA, 1A

Current - Collector Cutoff (Max):

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:

400 @ 1A, 2V

Power - Max:

2.75W

Frequency - Transition:

150MHz

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

SOT-223-8

Supplier Device Package:

SM8

Series:

-

Transistor Type:

NPN, PNP

Current - Collector (Ic) (Max):

500mA

Voltage - Collector Emitter Breakdown (Max):

300V

Vce Saturation (Max) @ Ib, Ic:

500mV @ 10mA, 100mA

Current - Collector Cutoff (Max):

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:

50 @ 100mA, 5V

Power - Max:

2.75W

Frequency - Transition:

30MHz

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

SOT-223-8

Supplier Device Package:

SM8

Series:

-

Transistor Type:

NPN, PNP Darlington (Dual)

Current - Collector (Ic) (Max):

1A

Voltage - Collector Emitter Breakdown (Max):

120V

Vce Saturation (Max) @ Ib, Ic:

1.5V @ 1mA, 1A

Current - Collector Cutoff (Max):

10µA

DC Current Gain (hFE) (Min) @ Ic, Vce:

2000 @ 1A, 5V

Power - Max:

2.75W

Frequency - Transition:

150MHz

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

SOT-223-8

Supplier Device Package:

SM8

Series:

-

Transistor Type:

NPN, PNP Darlington (Dual)

Current - Collector (Ic) (Max):

1.75A

Voltage - Collector Emitter Breakdown (Max):

60V

Vce Saturation (Max) @ Ib, Ic:

1.28V @ 2mA, 1.75A

Current - Collector Cutoff (Max):

500nA

DC Current Gain (hFE) (Min) @ Ic, Vce:

5000 @ 500mA, 5V / 2000 @ 500mA, 5V

Power - Max:

2.75W

Frequency - Transition:

140MHz

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

SOT-223-8

Supplier Device Package:

SM8

Series:

-

Transistor Type:

2 NPN (Dual)

Current - Collector (Ic) (Max):

2A

Voltage - Collector Emitter Breakdown (Max):

60V

Vce Saturation (Max) @ Ib, Ic:

500mV @ 200mA, 2A

Current - Collector Cutoff (Max):

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:

100 @ 500mA, 2V

Power - Max:

2.75W

Frequency - Transition:

175MHz

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

SOT-223-8

Supplier Device Package:

SM8

Series:

-

Transistor Type:

2 NPN (Dual)

Current - Collector (Ic) (Max):

2A

Voltage - Collector Emitter Breakdown (Max):

25V

Vce Saturation (Max) @ Ib, Ic:

500mV @ 200mA, 2A

Current - Collector Cutoff (Max):

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:

100 @ 1A, 2V

Power - Max:

2.75W

Frequency - Transition:

240MHz

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

SOT-223-8

Supplier Device Package:

SM8

Series:

-

Transistor Type:

2 NPN (Dual)

Current - Collector (Ic) (Max):

2A

Voltage - Collector Emitter Breakdown (Max):

50V

Vce Saturation (Max) @ Ib, Ic:

200mV @ 50mA, 2A

Current - Collector Cutoff (Max):

100nA

DC Current Gain (hFE) (Min) @ Ic, Vce:

200 @ 1A, 2V

Power - Max:

2.5W

Frequency - Transition:

165MHz

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

SOT-223-8

Supplier Device Package:

SM8

Series:

-

Transistor Type:

2 NPN Darlington (Dual)

Current - Collector (Ic) (Max):

1A

Voltage - Collector Emitter Breakdown (Max):

120V

Vce Saturation (Max) @ Ib, Ic:

1.5V @ 1mA, 1A

Current - Collector Cutoff (Max):

10µA

DC Current Gain (hFE) (Min) @ Ic, Vce:

2000 @ 1A, 5V

Power - Max:

2.75W

Frequency - Transition:

150MHz

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

SOT-223-8

Supplier Device Package:

SM8

Series:

-

Transistor Type:

2 NPN (Dual)

Current - Collector (Ic) (Max):

20mA

Voltage - Collector Emitter Breakdown (Max):

20V

Vce Saturation (Max) @ Ib, Ic:

100mV @ 100µA, 1mA

Current - Collector Cutoff (Max):

-

DC Current Gain (hFE) (Min) @ Ic, Vce:

-

Power - Max:

500mW

Frequency - Transition:

-

Operating Temperature:

-25°C ~ 85°C (TA)

Mounting Type:

Through Hole

Package / Case:

TO-99-6 Metal Can

Supplier Device Package:

TO-99-6

Series:

-

Transistor Type:

2 NPN (Dual)

Current - Collector (Ic) (Max):

4A

Voltage - Collector Emitter Breakdown (Max):

400V

Vce Saturation (Max) @ Ib, Ic:

500mV @ 1A, 4A

Current - Collector Cutoff (Max):

250µA

DC Current Gain (hFE) (Min) @ Ic, Vce:

12 @ 2A, 5V

Power - Max:

3W

Frequency - Transition:

-

Operating Temperature:

150°C (TJ)

Mounting Type:

Through Hole

Package / Case:

8-DIP (0.300", 7.62mm)

Supplier Device Package:

8-DIP