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Bipolar (BJT) - Arrays (2018)

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Records 2018
Page 198/202

Part Number:

HBDM60V600X-7

Manufacturer:

Diodes Incorporated

Description:

FUNCTIONAL ARRAY SOT363 T&R 3K

  • Series:

    -

  • Transistor Type:

    1 NPN, 1 PNP

  • Current - Collector (Ic) (Max):

    600mA, 500mA

  • Voltage - Collector Emitter Breakdown (Max):

    60V, 80V

  • Vce Saturation (Max) @ Ib, Ic:

    400mV @ 10mA, 100mA / 500mV @ 50mA, 500mA

  • Current - Collector Cutoff (Max):

    100nA, 50nA

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    250 @ 10mA, 1V / 100 @ 150mA, 10V

  • Power - Max:

    200mW

  • Frequency - Transition:

    -

  • Operating Temperature:

    -55°C ~ 150°C

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-TSSOP, SC-88, SOT-363

  • Supplier Device Package:

    SOT-363

Stock:

9000

1

Part Number:

BC846BPN-13P

Manufacturer:

Micro Commercial Co

Description:

BIPOLAR TRANSISTORS

  • Series:

    -

  • Transistor Type:

    1 NPN, 1 PNP

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    65V

  • Vce Saturation (Max) @ Ib, Ic:

    500mV @ 5mA, 100mA

  • Current - Collector Cutoff (Max):

    100nA

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    200 @ 2mA, 5V

  • Power - Max:

    200mW

  • Frequency - Transition:

    100MHz

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-TSSOP, SC-88, SOT-363

  • Supplier Device Package:

    SOT-363

Stock:

0

1

Part Number:

MPQ6700-PBFREE

Manufacturer:

Central Semiconductor Corp

Description:

TRANS 2NPN/2PNP 40V 0.2A

  • Series:

    -

  • Transistor Type:

    2 NPN, 2 PNP

  • Current - Collector (Ic) (Max):

    200mA

  • Voltage - Collector Emitter Breakdown (Max):

    40V

  • Vce Saturation (Max) @ Ib, Ic:

    250mV @ 1mA, 10mA

  • Current - Collector Cutoff (Max):

    50nA (ICBO)

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    70 @ 10mA, 1V

  • Power - Max:

    500mW

  • Frequency - Transition:

    200MHz

  • Operating Temperature:

    -65°C ~ 150°C (TJ)

  • Mounting Type:

    Through Hole

  • Package / Case:

    14-DIP (0.300", 7.62mm)

  • Supplier Device Package:

    TO-116

Stock:

0

1

Part Number:

JANTX2N5794A

Manufacturer:

Microchip Technology

Description:

NPN TRANSISTOR

  • Series:

    -

  • Transistor Type:

    2 NPN (Dual)

  • Current - Collector (Ic) (Max):

    600mA

  • Voltage - Collector Emitter Breakdown (Max):

    40V

  • Vce Saturation (Max) @ Ib, Ic:

    900mV @ 30mA, 300mA

  • Current - Collector Cutoff (Max):

    10µA (ICBO)

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    100 @ 150mA, 10V

  • Power - Max:

    600mW

  • Frequency - Transition:

    -

  • Operating Temperature:

    -65°C ~ 200°C (TJ)

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-78-6 Metal Can

  • Supplier Device Package:

    TO-78-6

Stock:

0

1

Part Number:

JANTX2N5793A

Manufacturer:

Microchip Technology

Description:

NPN TRANSISTOR

  • Series:

    -

  • Transistor Type:

    2 NPN (Dual)

  • Current - Collector (Ic) (Max):

    600mA

  • Voltage - Collector Emitter Breakdown (Max):

    40V

  • Vce Saturation (Max) @ Ib, Ic:

    900mV @ 30mA, 300mA

  • Current - Collector Cutoff (Max):

    10µA (ICBO)

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    40 @ 150mA, 10V

  • Power - Max:

    600mW

  • Frequency - Transition:

    -

  • Operating Temperature:

    -65°C ~ 200°C (TJ)

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-78-6 Metal Can

  • Supplier Device Package:

    TO-78-6

Stock:

0

1

Part Number:

JANTX2N5796A

Manufacturer:

Microchip Technology

Description:

NPN TRANSISTOR

  • Series:

    -

  • Transistor Type:

    2 PNP (Dual)

  • Current - Collector (Ic) (Max):

    600mA

  • Voltage - Collector Emitter Breakdown (Max):

    60V

  • Vce Saturation (Max) @ Ib, Ic:

    1.6V @ 50mA, 500mA

  • Current - Collector Cutoff (Max):

    10µA (ICBO)

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    100 @ 150mA, 10V

  • Power - Max:

    600mW

  • Frequency - Transition:

    -

  • Operating Temperature:

    -65°C ~ 175°C (TJ)

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-78-6 Metal Can

  • Supplier Device Package:

    TO-78-6

Stock:

0

1

Part Number:

JANTX2N5795A

Manufacturer:

Microchip Technology

Description:

NPN TRANSISTOR

  • Series:

    -

  • Transistor Type:

    2 PNP (Dual)

  • Current - Collector (Ic) (Max):

    600mA

  • Voltage - Collector Emitter Breakdown (Max):

    60V

  • Vce Saturation (Max) @ Ib, Ic:

    1.6V @ 50mA, 500mA

  • Current - Collector Cutoff (Max):

    10µA (ICBO)

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    40 @ 150mA, 10V

  • Power - Max:

    600mW

  • Frequency - Transition:

    -

  • Operating Temperature:

    -65°C ~ 175°C (TJ)

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-78-6 Metal Can

  • Supplier Device Package:

    TO-78-6

Stock:

0

1

Part Number:

SG2821J-883B

Manufacturer:

Microchip Technology

Description:

DRIVER - MEDIUM CURRENT ARRAY, H

  • Series:

    -

  • Transistor Type:

    8 NPN Darlington

  • Current - Collector (Ic) (Max):

    500mA

  • Voltage - Collector Emitter Breakdown (Max):

    95V

  • Vce Saturation (Max) @ Ib, Ic:

    1.6V @ 500µA, 350mA

  • Current - Collector Cutoff (Max):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    1000 @ 350mA, 2V

  • Power - Max:

    -

  • Frequency - Transition:

    -

  • Operating Temperature:

    -55°C ~ 125°C (TA)

  • Mounting Type:

    Through Hole

  • Package / Case:

    18-CDIP (0.300", 7.62mm)

  • Supplier Device Package:

    18-CERDIP

Stock:

0

1

Part Number:

ZXTC6717MCQTA

Manufacturer:

Diodes Incorporated

Description:

SS LOW SAT TRANSISTOR U-DFN3020-

  • Series:

    -

  • Transistor Type:

    1 NPN, 1 PNP Complementary

  • Current - Collector (Ic) (Max):

    4.5A, 4A

  • Voltage - Collector Emitter Breakdown (Max):

    15V, 12V

  • Vce Saturation (Max) @ Ib, Ic:

    310mV @ 50mA, 4.5A / 310mV @ 150mA, 4A

  • Current - Collector Cutoff (Max):

    100nA

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    300 @ 200mA, 2V / 300 @ 100mA, 2V

  • Power - Max:

    1.13W

  • Frequency - Transition:

    120MHz, 110MHz

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    8-VDFN Exposed Pad

  • Supplier Device Package:

    W-DFN3020-8

Stock:

0

1

Part Number:

JAN2N3810U-TR

Manufacturer:

Microchip Technology

Description:

TRANSISTOR DUAL SMALL-SIGNAL BJT

  • Series:

    -

  • Transistor Type:

    2 PNP (Dual)

  • Current - Collector (Ic) (Max):

    50mA

  • Voltage - Collector Emitter Breakdown (Max):

    60V

  • Vce Saturation (Max) @ Ib, Ic:

    250mV @ 100µA, 1mA

  • Current - Collector Cutoff (Max):

    10µA (ICBO)

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    150 @ 1mA, 5V

  • Power - Max:

    350mW

  • Frequency - Transition:

    -

  • Operating Temperature:

    -65°C ~ 200°C (TJ)

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-78-6 Metal Can

  • Supplier Device Package:

    TO-78-6

Stock:

0

1

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