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Bipolar (BJT) - Arrays (2018)

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Records 2018
Page 188/202

Part Number:

2N5793U

Manufacturer:

Microchip Technology

Description:

DUAL SMALL-SIGNAL BJT

  • Series:

    -

  • Transistor Type:

    2 NPN (Dual)

  • Current - Collector (Ic) (Max):

    600mA

  • Voltage - Collector Emitter Breakdown (Max):

    40V

  • Vce Saturation (Max) @ Ib, Ic:

    900mV @ 30mA, 300mA

  • Current - Collector Cutoff (Max):

    10µA (ICBO)

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    40 @ 150mA, 10V

  • Power - Max:

    600mW

  • Frequency - Transition:

    -

  • Operating Temperature:

    -65°C ~ 200°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-SMD, No Lead

  • Supplier Device Package:

    U

Stock:

0

1

Part Number:

2N5793A

Manufacturer:

Microchip Technology

Description:

DUAL SMALL-SIGNAL BJT

  • Series:

    -

  • Transistor Type:

    2 NPN (Dual)

  • Current - Collector (Ic) (Max):

    600mA

  • Voltage - Collector Emitter Breakdown (Max):

    40V

  • Vce Saturation (Max) @ Ib, Ic:

    900mV @ 30mA, 300mA

  • Current - Collector Cutoff (Max):

    10µA (ICBO)

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    40 @ 150mA, 10V

  • Power - Max:

    600mW

  • Frequency - Transition:

    -

  • Operating Temperature:

    -65°C ~ 200°C (TJ)

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-78-6 Metal Can

  • Supplier Device Package:

    TO-78-6

Stock:

0

1

Part Number:

2N5794A

Manufacturer:

Microchip Technology

Description:

DUAL SMALL-SIGNAL BJT

  • Series:

    -

  • Transistor Type:

    2 NPN (Dual)

  • Current - Collector (Ic) (Max):

    600mA

  • Voltage - Collector Emitter Breakdown (Max):

    40V

  • Vce Saturation (Max) @ Ib, Ic:

    900mV @ 30mA, 300mA

  • Current - Collector Cutoff (Max):

    10µA (ICBO)

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    100 @ 150mA, 10V

  • Power - Max:

    600mW

  • Frequency - Transition:

    -

  • Operating Temperature:

    -65°C ~ 200°C (TJ)

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-78-6 Metal Can

  • Supplier Device Package:

    TO-78-6

Stock:

0

1

Part Number:

2N5795A

Manufacturer:

Microchip Technology

Description:

DUAL SMALL-SIGNAL BJT

  • Series:

    -

  • Transistor Type:

    2 PNP (Dual)

  • Current - Collector (Ic) (Max):

    600mA

  • Voltage - Collector Emitter Breakdown (Max):

    60V

  • Vce Saturation (Max) @ Ib, Ic:

    1.6V @ 50mA, 500mA

  • Current - Collector Cutoff (Max):

    10µA (ICBO)

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    40 @ 150mA, 10V

  • Power - Max:

    600mW

  • Frequency - Transition:

    -

  • Operating Temperature:

    -65°C ~ 175°C (TJ)

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-78-6 Metal Can

  • Supplier Device Package:

    TO-78-6

Stock:

0

1

Part Number:

2N5796A

Manufacturer:

Microchip Technology

Description:

DUAL SMALL-SIGNAL BJT

  • Series:

    -

  • Transistor Type:

    2 PNP (Dual)

  • Current - Collector (Ic) (Max):

    600mA

  • Voltage - Collector Emitter Breakdown (Max):

    60V

  • Vce Saturation (Max) @ Ib, Ic:

    1.6V @ 50mA, 500mA

  • Current - Collector Cutoff (Max):

    10µA (ICBO)

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    100 @ 150mA, 10V

  • Power - Max:

    600mW

  • Frequency - Transition:

    -

  • Operating Temperature:

    -65°C ~ 175°C (TJ)

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-78-6 Metal Can

  • Supplier Device Package:

    TO-78-6

Stock:

0

1

Part Number:

PBSS4260PANS-QX

Manufacturer:

Nexperia

Description:

PBSS4260PANS-Q/SOT1118/HUSON6

  • Series:

    -

  • Transistor Type:

    2 NPN (Dual)

  • Current - Collector (Ic) (Max):

    2A

  • Voltage - Collector Emitter Breakdown (Max):

    60V

  • Vce Saturation (Max) @ Ib, Ic:

    350mV @ 200mA, 1A

  • Current - Collector Cutoff (Max):

    100nA

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    250 @ 100mA, 2V

  • Power - Max:

    510mW

  • Frequency - Transition:

    140MHz

  • Operating Temperature:

    150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-UDFN Exposed Pad

  • Supplier Device Package:

    DFN2020D-6

Stock:

0

1

Part Number:

BC847BVCQ-7

Manufacturer:

Diodes Incorporated

Description:

GENERAL PURPOSE TRANSISTOR SOT56

  • Series:

    -

  • Transistor Type:

    2 NPN (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    45V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 5mA, 100mA

  • Current - Collector Cutoff (Max):

    15nA (ICBO)

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    200 @ 2mA, 5V

  • Power - Max:

    150mW

  • Frequency - Transition:

    100MHz

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOT-563, SOT-666

  • Supplier Device Package:

    SOT-563

Stock:

0

1

Part Number:

BC846S-DG-B4X

Manufacturer:

Nexperia

Description:

TRANS 2NPN 65V 0.1A 6TSSOP

  • Series:

    -

  • Transistor Type:

    2 NPN (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    65V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 5mA, 100mA

  • Current - Collector Cutoff (Max):

    15nA (ICBO)

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    110 @ 2mA, 5V

  • Power - Max:

    300mW

  • Frequency - Transition:

    100MHz

  • Operating Temperature:

    150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-TSSOP, SC-88, SOT-363

  • Supplier Device Package:

    6-TSSOP

Stock:

0

1

Part Number:

BC846S-DG-B4F

Manufacturer:

Nexperia

Description:

TRANS 2NPN 65V 0.1A 6TSSOP

  • Series:

    -

  • Transistor Type:

    2 NPN (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    65V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 5mA, 100mA

  • Current - Collector Cutoff (Max):

    15nA (ICBO)

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    110 @ 2mA, 5V

  • Power - Max:

    300mW

  • Frequency - Transition:

    100MHz

  • Operating Temperature:

    150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-TSSOP, SC-88, SOT-363

  • Supplier Device Package:

    6-TSSOP

Stock:

0

1

Part Number:

PBSS5160DS-QX

Manufacturer:

Nexperia

Description:

PBSS5160DS-Q/SOT457/SC-74

  • Series:

    -

  • Transistor Type:

    2 PNP (Dual)

  • Current - Collector (Ic) (Max):

    770mA

  • Voltage - Collector Emitter Breakdown (Max):

    60V

  • Vce Saturation (Max) @ Ib, Ic:

    330mV @ 100mA, 1A

  • Current - Collector Cutoff (Max):

    100nA

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    200 @ 1mA, 5V

  • Power - Max:

    290mW

  • Frequency - Transition:

    185MHz

  • Operating Temperature:

    150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SC-74, SOT-457

  • Supplier Device Package:

    6-TSOP

Stock:

0

1

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