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Bipolar (BJT) - Arrays (2018)

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Records 2018
Page 176/202

Part Number:

JANSM2N3810U

Manufacturer:

Microchip Technology

Description:

DUAL RH SMALL-SIGNAL BJT

  • Series:

    -

  • Transistor Type:

    2 PNP (Dual)

  • Current - Collector (Ic) (Max):

    50mA

  • Voltage - Collector Emitter Breakdown (Max):

    60V

  • Vce Saturation (Max) @ Ib, Ic:

    250mV @ 100µA, 1mA

  • Current - Collector Cutoff (Max):

    10µA (ICBO)

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    150 @ 1mA, 5V

  • Power - Max:

    350mW

  • Frequency - Transition:

    -

  • Operating Temperature:

    -65°C ~ 200°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-SMD, No Lead

  • Supplier Device Package:

    U

Stock:

0

1

Part Number:

JANSM2N3810L

Manufacturer:

Microchip Technology

Description:

DUAL RH SMALL-SIGNAL BJT

  • Series:

    -

  • Transistor Type:

    2 PNP (Dual)

  • Current - Collector (Ic) (Max):

    50mA

  • Voltage - Collector Emitter Breakdown (Max):

    60V

  • Vce Saturation (Max) @ Ib, Ic:

    250mV @ 100µA, 1mA

  • Current - Collector Cutoff (Max):

    10µA (ICBO)

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    150 @ 1mA, 5V

  • Power - Max:

    350mW

  • Frequency - Transition:

    -

  • Operating Temperature:

    -65°C ~ 200°C (TJ)

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-78-6 Metal Can

  • Supplier Device Package:

    TO-78-6

Stock:

0

1

Part Number:

MPQ2222A-PBFREE

Manufacturer:

Central Semiconductor Corp

Description:

TRANS 4NPN 40V 0.5A

  • Series:

    -

  • Transistor Type:

    4 NPN (Quad)

  • Current - Collector (Ic) (Max):

    500mA

  • Voltage - Collector Emitter Breakdown (Max):

    40V

  • Vce Saturation (Max) @ Ib, Ic:

    1V @ 50mA, 500mA

  • Current - Collector Cutoff (Max):

    10nA (ICBO)

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    100 @ 150mA, 10V

  • Power - Max:

    650mW

  • Frequency - Transition:

    200MHz

  • Operating Temperature:

    -65°C ~ 150°C (TJ)

  • Mounting Type:

    Through Hole

  • Package / Case:

    14-DIP (0.300", 7.62mm)

  • Supplier Device Package:

    TO-116

Stock:

0

1

Part Number:

CMKT3904-TR-PBFREE

Manufacturer:

Central Semiconductor Corp

Description:

TRANS 2NPN 60V 0.2A SOT363

  • Series:

    -

  • Transistor Type:

    2 NPN (Dual)

  • Current - Collector (Ic) (Max):

    200mA

  • Voltage - Collector Emitter Breakdown (Max):

    40V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 5mA, 50mA

  • Current - Collector Cutoff (Max):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    100 @ 10mA, 1V

  • Power - Max:

    350mW

  • Frequency - Transition:

    300MHz

  • Operating Temperature:

    -65°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-TSSOP, SC-88, SOT-363

  • Supplier Device Package:

    SOT-363

Stock:

68376

1

Part Number:

JAN2N5794

Manufacturer:

Microchip Technology

Description:

NPN TRANSISTOR

  • Series:

    -

  • Transistor Type:

    2 NPN (Dual)

  • Current - Collector (Ic) (Max):

    600mA

  • Voltage - Collector Emitter Breakdown (Max):

    40V

  • Vce Saturation (Max) @ Ib, Ic:

    900mV @ 30mA, 300mA

  • Current - Collector Cutoff (Max):

    10µA (ICBO)

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    100 @ 150mA, 10V

  • Power - Max:

    600mW

  • Frequency - Transition:

    -

  • Operating Temperature:

    -65°C ~ 200°C (TJ)

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-78-6 Metal Can

  • Supplier Device Package:

    TO-78-6

Stock:

0

1

Part Number:

JAN2N5795

Manufacturer:

Microchip Technology

Description:

NPN TRANSISTOR

  • Series:

    -

  • Transistor Type:

    2 PNP (Dual)

  • Current - Collector (Ic) (Max):

    600mA

  • Voltage - Collector Emitter Breakdown (Max):

    60V

  • Vce Saturation (Max) @ Ib, Ic:

    1.6V @ 50mA, 500mA

  • Current - Collector Cutoff (Max):

    10µA (ICBO)

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    40 @ 150mA, 10V

  • Power - Max:

    600mW

  • Frequency - Transition:

    -

  • Operating Temperature:

    -65°C ~ 175°C (TJ)

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-78-6 Metal Can

  • Supplier Device Package:

    TO-78-6

Stock:

0

1

Part Number:

JAN2N5796

Manufacturer:

Microchip Technology

Description:

NPN TRANSISTOR

  • Series:

    -

  • Transistor Type:

    2 PNP (Dual)

  • Current - Collector (Ic) (Max):

    600mA

  • Voltage - Collector Emitter Breakdown (Max):

    60V

  • Vce Saturation (Max) @ Ib, Ic:

    1.6V @ 50mA, 500mA

  • Current - Collector Cutoff (Max):

    10µA (ICBO)

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    100 @ 150mA, 10V

  • Power - Max:

    600mW

  • Frequency - Transition:

    -

  • Operating Temperature:

    -65°C ~ 175°C (TJ)

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-78-6 Metal Can

  • Supplier Device Package:

    TO-78-6

Stock:

0

1

Part Number:

JAN2N5793

Manufacturer:

Microchip Technology

Description:

NPN TRANSISTOR

  • Series:

    -

  • Transistor Type:

    2 NPN (Dual)

  • Current - Collector (Ic) (Max):

    600mA

  • Voltage - Collector Emitter Breakdown (Max):

    40V

  • Vce Saturation (Max) @ Ib, Ic:

    900mV @ 30mA, 300mA

  • Current - Collector Cutoff (Max):

    10µA (ICBO)

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    40 @ 150mA, 10V

  • Power - Max:

    600mW

  • Frequency - Transition:

    -

  • Operating Temperature:

    -65°C ~ 200°C (TJ)

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-78-6 Metal Can

  • Supplier Device Package:

    TO-78-6

Stock:

0

1

Part Number:

JAN2N5794AUC-TR

Manufacturer:

Microchip Technology

Description:

TRANSISTOR DUAL SMALL-SIGNAL BJT

  • Series:

    -

  • Transistor Type:

    2 NPN (Dual)

  • Current - Collector (Ic) (Max):

    600mA

  • Voltage - Collector Emitter Breakdown (Max):

    40V

  • Vce Saturation (Max) @ Ib, Ic:

    900mV @ 30mA, 300mA

  • Current - Collector Cutoff (Max):

    10µA (ICBO)

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    100 @ 150mA, 10V

  • Power - Max:

    600mW

  • Frequency - Transition:

    -

  • Operating Temperature:

    -65°C ~ 200°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-SMD, No Lead

  • Supplier Device Package:

    6-SMD

Stock:

0

1

Part Number:

DXTN3C100PDQ-13

Manufacturer:

Diodes Incorporated

Description:

SS Low Sat Transistor PowerDI506

  • Series:

    -

  • Transistor Type:

    2 NPN (Dual)

  • Current - Collector (Ic) (Max):

    3A

  • Voltage - Collector Emitter Breakdown (Max):

    100V

  • Vce Saturation (Max) @ Ib, Ic:

    330mV @ 300mA, 3A

  • Current - Collector Cutoff (Max):

    100nA

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    150 @ 500mA, 10V

  • Power - Max:

    1.47W

  • Frequency - Transition:

    130MHz

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    8-PowerTDFN

  • Supplier Device Package:

    PowerDI5060-8 (Type UXD)

Stock:

4443

1

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