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Bipolar (BJT) - Arrays (2018)

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Records 2018
Page 173/202

Part Number:

PMBT2222AYS-QX

Manufacturer:

Nexperia

Description:

PMBT2222AYS-Q/SOT363/TO-236AB

  • Series:

    -

  • Transistor Type:

    2 NPN

  • Current - Collector (Ic) (Max):

    600mA

  • Voltage - Collector Emitter Breakdown (Max):

    40V

  • Vce Saturation (Max) @ Ib, Ic:

    1V @ 50mA, 500mA

  • Current - Collector Cutoff (Max):

    10nA (ICBO)

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    100 @ 150mA, 10V

  • Power - Max:

    250mW

  • Frequency - Transition:

    300MHz

  • Operating Temperature:

    150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-TSSOP, SC-88, SOT-363

  • Supplier Device Package:

    6-TSSOP

Stock:

0

1

Part Number:

JANS2N5796UC-TR

Manufacturer:

Microchip Technology

Description:

DUAL SMALL-SIGNAL BJT

  • Series:

    -

  • Transistor Type:

    2 PNP (Dual)

  • Current - Collector (Ic) (Max):

    600mA

  • Voltage - Collector Emitter Breakdown (Max):

    60V

  • Vce Saturation (Max) @ Ib, Ic:

    1.6V @ 50mA, 500mA

  • Current - Collector Cutoff (Max):

    10µA (ICBO)

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    100 @ 150mA, 10V

  • Power - Max:

    600mW

  • Frequency - Transition:

    -

  • Operating Temperature:

    -65°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-SMD, No Lead

  • Supplier Device Package:

    UC

Stock:

0

1

Part Number:

MNS2N3810UP

Manufacturer:

Microchip Technology

Description:

DUAL SMALL-SIGNAL BJT

  • Series:

    -

  • Transistor Type:

    2 PNP (Dual)

  • Current - Collector (Ic) (Max):

    50mA

  • Voltage - Collector Emitter Breakdown (Max):

    60V

  • Vce Saturation (Max) @ Ib, Ic:

    250mV @ 100µA, 1mA

  • Current - Collector Cutoff (Max):

    10µA (ICBO)

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    150 @ 1mA, 5V

  • Power - Max:

    350mW

  • Frequency - Transition:

    -

  • Operating Temperature:

    -65°C ~ 200°C (TJ)

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-78-6 Metal Can

  • Supplier Device Package:

    TO-78-6

Stock:

0

1

Part Number:

HN1C01FU-GR-LXHF

Manufacturer:

Toshiba Semiconductor and Storage

Description:

AUTO AEC-Q NPN + NPN TR VCEO:50V

  • Series:

    -

  • Transistor Type:

    2 NPN (Dual)

  • Current - Collector (Ic) (Max):

    150mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Vce Saturation (Max) @ Ib, Ic:

    250mV @ 10mA, 100mA

  • Current - Collector Cutoff (Max):

    100nA (ICBO)

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    200 @ 2mA, 6V

  • Power - Max:

    200mW

  • Frequency - Transition:

    80MHz

  • Operating Temperature:

    -

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-TSSOP, SC-88, SOT-363

  • Supplier Device Package:

    US6

Stock:

18000

1

Part Number:

2N6989U-TR

Manufacturer:

Microchip Technology

Description:

TRANSISTOR QUAD SMALL-SIGNAL BJT

  • Series:

    -

  • Transistor Type:

    4 NPN (Quad)

  • Current - Collector (Ic) (Max):

    -

  • Voltage - Collector Emitter Breakdown (Max):

    -

  • Vce Saturation (Max) @ Ib, Ic:

    1V @ 50mA, 500mA

  • Current - Collector Cutoff (Max):

    10µA (ICBO)

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    100 @ 150mA, 10V

  • Power - Max:

    -

  • Frequency - Transition:

    -

  • Operating Temperature:

    -65°C ~ 200°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    20-CLCC

  • Supplier Device Package:

    20-CLCC

Stock:

0

1

Part Number:

UMZ1N-TP

Manufacturer:

Micro Commercial Co

Description:

Interface

  • Series:

    -

  • Transistor Type:

    1 NPN, 1 PNP

  • Current - Collector (Ic) (Max):

    150mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Vce Saturation (Max) @ Ib, Ic:

    400mV @ 5mA, 50mA

  • Current - Collector Cutoff (Max):

    100nA (ICBO)

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    120 @ 1mA, 6V

  • Power - Max:

    150mW

  • Frequency - Transition:

    180MHz, 140MHz

  • Operating Temperature:

    150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-TSSOP, SC-88, SOT-363

  • Supplier Device Package:

    SOT-363

Stock:

0

1

Part Number:

JANTXV2N2919U-TR

Manufacturer:

Microchip Technology

Description:

TRANSISTOR DUAL SMALL-SIGNAL BJT

  • Series:

    -

  • Transistor Type:

    2 NPN (Dual)

  • Current - Collector (Ic) (Max):

    30mA

  • Voltage - Collector Emitter Breakdown (Max):

    60V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 100µA, 1mA

  • Current - Collector Cutoff (Max):

    10µA (ICBO)

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    150 @ 1mA, 5V

  • Power - Max:

    350mW

  • Frequency - Transition:

    -

  • Operating Temperature:

    200°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-SMD, No Lead

  • Supplier Device Package:

    U

Stock:

0

1

Part Number:

SG2804J-883B

Manufacturer:

Microchip Technology

Description:

DRIVER - MEDIUM CURRENT ARRAY, H

  • Series:

    -

  • Transistor Type:

    8 NPN Darlington

  • Current - Collector (Ic) (Max):

    500mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Vce Saturation (Max) @ Ib, Ic:

    1.6V @ 500µA, 350mA

  • Current - Collector Cutoff (Max):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    1000 @ 350mA, 2V

  • Power - Max:

    -

  • Frequency - Transition:

    -

  • Operating Temperature:

    -55°C ~ 125°C (TA)

  • Mounting Type:

    Through Hole

  • Package / Case:

    18-CDIP (0.300", 7.62mm)

  • Supplier Device Package:

    18-CERDIP

Stock:

0

1

Part Number:

CTLM3474-M832D-TR

Manufacturer:

Central Semiconductor Corp

Description:

TRANSISTOR

  • Series:

    -

  • Transistor Type:

    1 NPN, 1 PNP

  • Current - Collector (Ic) (Max):

    1A

  • Voltage - Collector Emitter Breakdown (Max):

    25V

  • Vce Saturation (Max) @ Ib, Ic:

    450mV @ 100mA, 1A

  • Current - Collector Cutoff (Max):

    100nA (ICBO)

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    100 @ 500mA, 1V

  • Power - Max:

    1.65W

  • Frequency - Transition:

    100MHz

  • Operating Temperature:

    -65°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    8-TDFN Exposed Pad

  • Supplier Device Package:

    TLM832D

Stock:

0

1

Part Number:

SG2003L-883B

Manufacturer:

Microchip Technology

Description:

DRIVER - MEDIUM CURRENT ARRAY, H

  • Series:

    -

  • Transistor Type:

    7 NPN Darlington

  • Current - Collector (Ic) (Max):

    500mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Vce Saturation (Max) @ Ib, Ic:

    1.6V @ 500µA, 350mA

  • Current - Collector Cutoff (Max):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    1000 @ 350mA, 2V

  • Power - Max:

    -

  • Frequency - Transition:

    -

  • Operating Temperature:

    -55°C ~ 125°C (TA)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    20-CLCC

  • Supplier Device Package:

    20-CLCC (8.89x8.89)

Stock:

0

1

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