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Bipolar (BJT) - Arrays (2018)

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Records 2018
Page 152/202

Part Number:

EMZ7-TP

Manufacturer:

Micro Commercial Co

Description:

DUAL N+P TRANSISTORS,SOT-563

  • Series:

    -

  • Transistor Type:

    1 NPN, 1 PNP

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    12V

  • Vce Saturation (Max) @ Ib, Ic:

    220mV @ 10mA, 200mA

  • Current - Collector Cutoff (Max):

    100nA (ICBO)

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    200 @ 10mA, 2V

  • Power - Max:

    200mW

  • Frequency - Transition:

    420MHz, 280MHz

  • Operating Temperature:

    -55°C ~ 150°C

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOT-563, SOT-666

  • Supplier Device Package:

    SOT-563

Stock:

17955

1

Part Number:

MMDT2227HE3-TP

Manufacturer:

Micro Commercial Co

Description:

BIPOLAR TRANSISTORS

  • Series:

    -

  • Transistor Type:

    1 NPN, 1 PNP

  • Current - Collector (Ic) (Max):

    600mA

  • Voltage - Collector Emitter Breakdown (Max):

    40V, 60V

  • Vce Saturation (Max) @ Ib, Ic:

    1.6V @ 50mA, 500mA

  • Current - Collector Cutoff (Max):

    10nA, 50nA

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    100 @ 150mA, 10V

  • Power - Max:

    200mW

  • Frequency - Transition:

    250MHz

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-TSSOP, SC-88, SOT-363

  • Supplier Device Package:

    SOT-363

Stock:

0

1

Part Number:

BCV61C-TP

Manufacturer:

Micro Commercial Co

Description:

Interface

  • Series:

    -

  • Transistor Type:

    2 NPN (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    30V

  • Vce Saturation (Max) @ Ib, Ic:

    600mV @ 5mA, 100mA

  • Current - Collector Cutoff (Max):

    15nA (ICBO)

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    420 @ 2mA, 5V

  • Power - Max:

    250mW

  • Frequency - Transition:

    100MHz

  • Operating Temperature:

    -65°C ~ 150°C

  • Mounting Type:

    Surface Mount

  • Package / Case:

    TO-253-4, TO-253AA

  • Supplier Device Package:

    SOT-143

Stock:

0

1

Part Number:

JANTX2N6987U-TR

Manufacturer:

Microchip Technology

Description:

TRANSISTOR QUAD SMALL-SIGNAL BJT

  • Series:

    -

  • Transistor Type:

    4 PNP (Quad)

  • Current - Collector (Ic) (Max):

    600mA

  • Voltage - Collector Emitter Breakdown (Max):

    60V

  • Vce Saturation (Max) @ Ib, Ic:

    1.6V @ 50mA, 500mA

  • Current - Collector Cutoff (Max):

    10µA (ICBO)

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    100 @ 150mA, 10V

  • Power - Max:

    1W

  • Frequency - Transition:

    -

  • Operating Temperature:

    -65°C ~ 200°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-SMD, No Lead

  • Supplier Device Package:

    6-SMD

Stock:

0

1

Part Number:

UMT1NFHATN

Manufacturer:

Rohm Semiconductor

Description:

PNP+PNP GENERAL PURPOSE AMPLIFIC

  • Series:

    -

  • Transistor Type:

    2 PNP (Dual)

  • Current - Collector (Ic) (Max):

    150mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Vce Saturation (Max) @ Ib, Ic:

    500mV @ 5mA, 50mA

  • Current - Collector Cutoff (Max):

    100nA (ICBO)

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    120 @ 1mA, 6V

  • Power - Max:

    150mW

  • Frequency - Transition:

    140MHz

  • Operating Temperature:

    150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-TSSOP, SC-88, SOT-363

  • Supplier Device Package:

    UMT6

Stock:

18066

1

Part Number:

CMKT2907AG-TR-PBFREE

Manufacturer:

Central Semiconductor Corp

Description:

TRANS 2PNP 60V 0.6A SOT363

  • Series:

    -

  • Transistor Type:

    2 PNP (Dual)

  • Current - Collector (Ic) (Max):

    600mA

  • Voltage - Collector Emitter Breakdown (Max):

    60V

  • Vce Saturation (Max) @ Ib, Ic:

    1.6V @ 50mA, 500mA

  • Current - Collector Cutoff (Max):

    10nA (ICBO)

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    100 @ 150mA, 10V

  • Power - Max:

    350mW

  • Frequency - Transition:

    200MHz

  • Operating Temperature:

    -65°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-TSSOP, SC-88, SOT-363

  • Supplier Device Package:

    SOT-363

Stock:

44601

1

Part Number:

TPCP8701-TE85L-F-M

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS 2NPN 80V 3A PS8

  • Series:

    -

  • Transistor Type:

    2 NPN (Dual)

  • Current - Collector (Ic) (Max):

    3A

  • Voltage - Collector Emitter Breakdown (Max):

    80V

  • Vce Saturation (Max) @ Ib, Ic:

    140mV @ 20mA, 1A

  • Current - Collector Cutoff (Max):

    100nA (ICBO)

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    400 @ 300mA, 2V

  • Power - Max:

    1.77W

  • Frequency - Transition:

    -

  • Operating Temperature:

    150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    8-SMD, Flat Lead

  • Supplier Device Package:

    PS-8

Stock:

0

1

Part Number:

JANS2N6987U

Manufacturer:

Microchip Technology

Description:

PNP TRANSISTOR

  • Series:

    -

  • Transistor Type:

    4 PNP (Quad)

  • Current - Collector (Ic) (Max):

    600mA

  • Voltage - Collector Emitter Breakdown (Max):

    60V

  • Vce Saturation (Max) @ Ib, Ic:

    1.6V @ 50mA, 500mA

  • Current - Collector Cutoff (Max):

    10µA (ICBO)

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    100 @ 150mA, 10V

  • Power - Max:

    1W

  • Frequency - Transition:

    -

  • Operating Temperature:

    -65°C ~ 200°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-SMD, No Lead

  • Supplier Device Package:

    6-SMD

Stock:

0

1

Part Number:

JANS2N6989U

Manufacturer:

Microchip Technology

Description:

NPN TRANSISTOR

  • Series:

    -

  • Transistor Type:

    4 PNP (Quad)

  • Current - Collector (Ic) (Max):

    800mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Vce Saturation (Max) @ Ib, Ic:

    1V @ 50mA, 500mA

  • Current - Collector Cutoff (Max):

    10nA (ICBO)

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    100 @ 150mA, 10V

  • Power - Max:

    1W

  • Frequency - Transition:

    -

  • Operating Temperature:

    -65°C ~ 200°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-SMD, No Lead

  • Supplier Device Package:

    6-SMD

Stock:

0

1

Part Number:

HN1C03FU-B-LF

Manufacturer:

Toshiba Semiconductor and Storage

Description:

NPN + NPN IND. TRANSISTOR VCEO20

  • Series:

    -

  • Transistor Type:

    2 NPN (Dual)

  • Current - Collector (Ic) (Max):

    300mA

  • Voltage - Collector Emitter Breakdown (Max):

    20V

  • Vce Saturation (Max) @ Ib, Ic:

    100mV @ 3mA, 30A

  • Current - Collector Cutoff (Max):

    100nA (ICBO)

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    350 @ 4mA, 2V

  • Power - Max:

    200mW

  • Frequency - Transition:

    30MHz

  • Operating Temperature:

    150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-TSSOP, SC-88, SOT-363

  • Supplier Device Package:

    US6

Stock:

16884

1

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