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Bipolar (BJT) - Arrays, Pre-Biased (2065)

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Part Number:

RN1907,LF

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS 2NPN PREBIAS 0.2W US6

  • Series:

    -

  • Transistor Type:

    2 NPN - Pre-Biased (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    10kOhms

  • Resistor - Emitter Base (R2):

    47kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    80 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    250MHz

  • Power - Max:

    200mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-TSSOP, SC-88, SOT-363

  • Supplier Device Package:

    US6

Stock:

304

1

Part Number:

RN1906,LF

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS 2NPN PREBIAS 0.2W US6

  • Series:

    -

  • Transistor Type:

    2 NPN - Pre-Biased (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    4.7kOhms

  • Resistor - Emitter Base (R2):

    47kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    80 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    250MHz

  • Power - Max:

    200mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-TSSOP, SC-88, SOT-363

  • Supplier Device Package:

    US6

Stock:

303

1

Part Number:

RN1905,LF

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS 2NPN PREBIAS 0.2W US6

  • Series:

    -

  • Transistor Type:

    2 NPN - Pre-Biased (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    2.2kOhms

  • Resistor - Emitter Base (R2):

    47kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    80 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    250MHz

  • Power - Max:

    200mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-TSSOP, SC-88, SOT-363

  • Supplier Device Package:

    US6

Stock:

387

1

Part Number:

NSVB144EPDXV6T1G

Manufacturer:

ON Semiconductor

Description:

TRANS PREBIAS NPN/PNP SOT563

  • Series:

    -

  • Transistor Type:

    1 NPN, 1 PNP - Pre-Biased (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    47kOhms

  • Resistor - Emitter Base (R2):

    47kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    80 @ 5mA, 10V

  • Vce Saturation (Max) @ Ib, Ic:

    250mV @ 300µA, 10mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    -

  • Power - Max:

    500mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOT-563, SOT-666

  • Supplier Device Package:

    SOT-563

Stock:

420

1

Part Number:

NSVB124XPDXV6T1G

Manufacturer:

ON Semiconductor

Description:

TRANS PREBIAS NPN/PNP SOT563

  • Series:

    -

  • Transistor Type:

    1 NPN, 1 PNP - Pre-Biased (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    22kOhms

  • Resistor - Emitter Base (R2):

    47kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    80 @ 5mA, 10V

  • Vce Saturation (Max) @ Ib, Ic:

    250mV @ 1mA, 10mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    -

  • Power - Max:

    500mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOT-563, SOT-666

  • Supplier Device Package:

    SOT-563

Stock:

364

1

Part Number:

UMF24NTR

Manufacturer:

Rohm Semiconductor

Description:

TRANS NPN PREBIAS/NPN 0.15W UMT6

  • Series:

    -

  • Transistor Type:

    1 NPN Pre-Biased, 1 NPN

  • Current - Collector (Ic) (Max):

    100mA, 150mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    10kOhms

  • Resistor - Emitter Base (R2):

    10kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    30 @ 5mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 500µA, 10mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    250MHz

  • Power - Max:

    150mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-TSSOP, SC-88, SOT-363

  • Supplier Device Package:

    UMT6

Stock:

173

1
RN1501(TE85L,F)

Part Number:

RN1501(TE85L,F)

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS 2NPN PREBIAS 0.3W SMV

  • Series:

    -

  • Transistor Type:

    2 NPN - Pre-Biased (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    4.7kOhms

  • Resistor - Emitter Base (R2):

    4.7kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    30 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    100nA (ICBO)

  • Frequency - Transition:

    250MHz

  • Power - Max:

    300mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SC-74A, SOT-753

  • Supplier Device Package:

    SMV

Stock:

434

1

Part Number:

RN4902FE(TE85L,F)

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS NPN/PNP PREBIAS 0.1W ES6

  • Series:

    -

  • Transistor Type:

    1 NPN, 1 PNP - Pre-Biased (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    10kOhms

  • Resistor - Emitter Base (R2):

    10kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    50 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    100nA (ICBO)

  • Frequency - Transition:

    200MHz

  • Power - Max:

    100mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOT-563, SOT-666

  • Supplier Device Package:

    ES6

Stock:

391

1
RN2706JE(TE85L,F)

Part Number:

RN2706JE(TE85L,F)

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS 2PNP PREBIAS 0.1W ESV

  • Series:

    -

  • Transistor Type:

    2 PNP - Pre-Biased (Dual) (Emitter Coupled)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    4.7kOhms

  • Resistor - Emitter Base (R2):

    47kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    80 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    100nA (ICBO)

  • Frequency - Transition:

    200MHz

  • Power - Max:

    100mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOT-553

  • Supplier Device Package:

    ESV

Stock:

319

1
RN1506(TE85L,F)

Part Number:

RN1506(TE85L,F)

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS 2NPN PREBIAS 0.3W SMV

  • Series:

    -

  • Transistor Type:

    2 NPN - Pre-Biased (Dual) (Emitter Coupled)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    4.7kOhms

  • Resistor - Emitter Base (R2):

    47kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    80 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    100nA (ICBO)

  • Frequency - Transition:

    250MHz

  • Power - Max:

    300mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SC-74A, SOT-753

  • Supplier Device Package:

    SMV

Stock:

391

1

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