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Bipolar (BJT) - Arrays, Pre-Biased (2065)

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Records 2065
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Part Number:

DDC114YUQ-7-F

Manufacturer:

Diodes Incorporated

Description:

PREBIAS TRANSISTOR SOT363 T&R 3K

  • Series:

    DDC (XXXX) U

  • Transistor Type:

    2 NPN - Pre-Biased (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    80 @ 5mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    500nA (ICBO)

  • Frequency - Transition:

    250MHz

  • Power - Max:

    200mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-TSSOP, SC-88, SOT-363

  • Supplier Device Package:

    SOT-363

Stock:

0

1

Part Number:

RN4984-LXHF-CT

Manufacturer:

Toshiba Semiconductor and Storage

Description:

AUTO AEC-Q 2-IN-1 (POINT-SYM) NP

  • Series:

    -

  • Transistor Type:

    1 NPN, 1 PNP - Pre-Biased (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    80 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    250MHz, 200MHz

  • Power - Max:

    200mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-TSSOP, SC-88, SOT-363

  • Supplier Device Package:

    US6

Stock:

7290

1

Part Number:

RN1901FE-LXHF-CT

Manufacturer:

Toshiba Semiconductor and Storage

Description:

AUTO AEC-Q 2-IN-1 (POINT-SYMMETR

  • Series:

    -

  • Transistor Type:

    2 NPN - Pre-Biased (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    30 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    250MHz

  • Power - Max:

    100mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOT-563, SOT-666

  • Supplier Device Package:

    ES6

Stock:

23850

1

Part Number:

RN2907-LF-CT

Manufacturer:

Toshiba Semiconductor and Storage

Description:

PNPX2 BRT Q1BSR10KOHM Q1BER47KOH

  • Series:

    -

  • Transistor Type:

    2 PNP - Pre-Biased (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    80 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    200MHz

  • Power - Max:

    200mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-TSSOP, SC-88, SOT-363

  • Supplier Device Package:

    US6

Stock:

14457

1

Part Number:

PUMH10-QAX

Manufacturer:

Nexperia

Description:

PUMH10-Q/SOT363/SC-88

  • Series:

    -

  • Transistor Type:

    2 NPN - Pre-Biased (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    100 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    100mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    100nA

  • Frequency - Transition:

    230MHz

  • Power - Max:

    200mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-TSSOP, SC-88, SOT-363

  • Supplier Device Package:

    6-TSSOP

Stock:

0

1

Part Number:

DDC114TUQ-7-F

Manufacturer:

Diodes Incorporated

Description:

PREBIAS TRANSISTOR SOT363 T&R 3K

  • Series:

    DDC (XXXX) U

  • Transistor Type:

    2 NPN - Pre-Biased (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    100 @ 1mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 100µA, 1mA

  • Current - Collector Cutoff (Max):

    500nA (ICBO)

  • Frequency - Transition:

    250MHz

  • Power - Max:

    200mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-TSSOP, SC-88, SOT-363

  • Supplier Device Package:

    SOT-363

Stock:

0

1

Part Number:

UMD9N-13P

Manufacturer:

Micro Commercial Co

Description:

MOSFET

  • Series:

    -

  • Transistor Type:

    1 NPN, 1 PNP - Pre-Biased

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    68 @ 5mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    250MHz

  • Power - Max:

    150mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-TSSOP, SC-88, SOT-363

  • Supplier Device Package:

    SOT-363

Stock:

0

1

Part Number:

RN4907-LXHF-CT

Manufacturer:

Toshiba Semiconductor and Storage

Description:

AUTO AEC-Q 2-IN-1 (POINT-SYM) PN

  • Series:

    -

  • Transistor Type:

    1 NPN, 1 PNP - Pre-Biased (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    80 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    200MHz, 250MHz

  • Power - Max:

    200mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-TSSOP, SC-88, SOT-363

  • Supplier Device Package:

    US6

Stock:

9000

1

Part Number:

RN1908FE-LXHF-CT

Manufacturer:

Toshiba Semiconductor and Storage

Description:

AUTO AEC-Q 2-IN-1 (POINT-SYMMETR

  • Series:

    -

  • Transistor Type:

    2 NPN - Pre-Biased (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    80 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    250MHz

  • Power - Max:

    100mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOT-563, SOT-666

  • Supplier Device Package:

    ES6

Stock:

24000

1

Part Number:

PUMD2-DG-B4X

Manufacturer:

Nexperia

Description:

TRANS PREBIAS 1NPN 1PNP 6TSSOP

  • Series:

    -

  • Transistor Type:

    1 NPN, 1 PNP - Pre-Biased (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    60 @ 5mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    150mV @ 500µA, 10mA

  • Current - Collector Cutoff (Max):

    100nA

  • Frequency - Transition:

    230MHz, 180MHz

  • Power - Max:

    300mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-TSSOP, SC-88, SOT-363

  • Supplier Device Package:

    6-TSSOP

Stock:

0

1

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