Logo

Bipolar (BJT) - Arrays, Pre-Biased (2065)

Records 0
Reset All
Records 2065
Page 189/207

Part Number:

RN4907FE-LXHF-CT

Manufacturer:

Toshiba Semiconductor and Storage

Description:

AUTO AEC-Q 2-IN-1 (POINT-SYMMETR

  • Series:

    -

  • Transistor Type:

    1 NPN, 1 PNP - Pre-Biased (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    80 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    200MHz, 250MHz

  • Power - Max:

    100mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOT-563, SOT-666

  • Supplier Device Package:

    ES6

Stock:

24000

1

Part Number:

RN2906FE-LXHF-CT

Manufacturer:

Toshiba Semiconductor and Storage

Description:

AUTO AEC-Q TR PNPX2 Q1BSR=4.7KOH

  • Series:

    -

  • Transistor Type:

    2 PNP - Pre-Biased (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    80 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    200MHz

  • Power - Max:

    100mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOT-563, SOT-666

  • Supplier Device Package:

    ES6

Stock:

22500

1

Part Number:

RN2910-LF-CT

Manufacturer:

Toshiba Semiconductor and Storage

Description:

PNPX2 BRT Q1BSR4.7KOHM Q1BERINF.

  • Series:

    -

  • Transistor Type:

    2 PNP - Pre-Biased (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    120 @ 1mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    100nA (ICBO)

  • Frequency - Transition:

    200MHz

  • Power - Max:

    200mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SC-61AA

  • Supplier Device Package:

    SMQ

Stock:

9000

1

Part Number:

PIMC32-QX

Manufacturer:

Nexperia

Description:

TRANS PREBIAS 1NPN 1PNP 6TSOP

  • Series:

    -

  • Transistor Type:

    1 NPN, 1 PNP - Pre-Biased (Dual)

  • Current - Collector (Ic) (Max):

    500mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    70 @ 50mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    100mV @ 2.5mA, 50mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    225MHz, 140MHz

  • Power - Max:

    290mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SC-74, SOT-457

  • Supplier Device Package:

    6-TSOP

Stock:

42000

1

Part Number:

RN1909-LXHF-CT

Manufacturer:

Toshiba Semiconductor and Storage

Description:

AUTO AEC-Q TR NPNX2 BRT, Q1BSR=4

  • Series:

    -

  • Transistor Type:

    2 NPN - Pre-Biased (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    70 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    250MHz

  • Power - Max:

    200mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-TSSOP, SC-88, SOT-363

  • Supplier Device Package:

    US6

Stock:

18000

1

Part Number:

PIMC31PAX

Manufacturer:

Nexperia

Description:

PIMC31PA/SOT1118/HUSON6

  • Series:

    -

  • Transistor Type:

    1 NPN - Pre-Biased, 1 PNP

  • Current - Collector (Ic) (Max):

    500mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    70 @ 50mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    100mV @ 2.5mA, 50mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    210MHz, 150MHz

  • Power - Max:

    360mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-UFDFN Exposed Pad

  • Supplier Device Package:

    6-HUSON (2x2)

Stock:

9000

1

Part Number:

DCX114EUQ-13R-F

Manufacturer:

Diodes Incorporated

Description:

PREBIAS TRANSISTOR SOT363 T&R 10

  • Series:

    DCX (XXXX) U

  • Transistor Type:

    1 NPN, 1 PNP - Pre-Biased (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    30 @ 5mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 500µA, 10mA

  • Current - Collector Cutoff (Max):

    500nA (ICBO)

  • Frequency - Transition:

    250MHz

  • Power - Max:

    200mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-TSSOP, SC-88, SOT-363

  • Supplier Device Package:

    SOT-363

Stock:

0

1

Part Number:

UMH3N-TP

Manufacturer:

Micro Commercial Co

Description:

Interface

  • Series:

    -

  • Transistor Type:

    2 NPN - Pre-Biased (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    100 @ 1mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 500µA, 10mA

  • Current - Collector Cutoff (Max):

    500nA (ICBO)

  • Frequency - Transition:

    250MHz

  • Power - Max:

    150mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-TSSOP, SC-88, SOT-363

  • Supplier Device Package:

    SOT-363

Stock:

0

1

Part Number:

DCX114EUQ-7-F

Manufacturer:

Diodes Incorporated

Description:

PREBIAS TRANSISTOR SOT363 T&R 3K

  • Series:

    DCX (XXXX) U

  • Transistor Type:

    1 NPN, 1 PNP - Pre-Biased (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    30 @ 5mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 500µA, 10mA

  • Current - Collector Cutoff (Max):

    500nA (ICBO)

  • Frequency - Transition:

    250MHz

  • Power - Max:

    200mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-TSSOP, SC-88, SOT-363

  • Supplier Device Package:

    SOT-363

Stock:

9000

1

Part Number:

EMB52T2R

Manufacturer:

Rohm Semiconductor

Description:

PNP+PNP DIGITAL TRANSISTOR (WITH

  • Series:

    -

  • Transistor Type:

    2 PNP Pre-Biased (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    80 @ 5mA, 10V

  • Vce Saturation (Max) @ Ib, Ic:

    150mV @ 500µA, 5mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    250MHz

  • Power - Max:

    150mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOT-563, SOT-666

  • Supplier Device Package:

    EMT6

Stock:

24000

1

获取最新资讯

每日获取来自全球众多供应商的最新优惠资讯