Logo

Bipolar (BJT) - Arrays, Pre-Biased (2065)

Records 0
Reset All
Records 2065
Page 185/207

Part Number:

RN1903FE-LF-CT

Manufacturer:

Toshiba Semiconductor and Storage

Description:

NPNX2 BRT Q1BSR22KOHM Q1BER22KOH

  • Series:

    -

  • Transistor Type:

    2 NPN - Pre-Biased (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    70 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    250MHz

  • Power - Max:

    100mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOT-563, SOT-666

  • Supplier Device Package:

    ES6

Stock:

9000

1

Part Number:

RN2904-LXHF-CT

Manufacturer:

Toshiba Semiconductor and Storage

Description:

AUTO AEC-Q 2-IN-1 (POINT-SYM) PN

  • Series:

    -

  • Transistor Type:

    2 PNP - Pre-Biased (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    80 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    200MHz

  • Power - Max:

    200mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-TSSOP, SC-88, SOT-363

  • Supplier Device Package:

    US6

Stock:

8670

1

Part Number:

PBLS6024D-QX

Manufacturer:

Nexperia

Description:

PBLS6024D-Q/SOT457/SC-74

  • Series:

    -

  • Transistor Type:

    1 NPN Pre-Biased, 1 PNP

  • Current - Collector (Ic) (Max):

    100mA, 1.5A

  • Voltage - Collector Emitter Breakdown (Max):

    50V, 60V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    60 @ 5mA, 5V / 180 @ 100mA, 2V

  • Vce Saturation (Max) @ Ib, Ic:

    150mV @ 500µA, 10V / 260mV @ 100mA, 1.5A

  • Current - Collector Cutoff (Max):

    1µA, 100nA

  • Frequency - Transition:

    150MHz

  • Power - Max:

    200mW, 370mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SC-74, SOT-457

  • Supplier Device Package:

    6-TSOP

Stock:

0

1

Part Number:

UMF25NTR

Manufacturer:

Rohm Semiconductor

Description:

LINEAR IC

  • Series:

    -

  • Transistor Type:

    -

  • Current - Collector (Ic) (Max):

    -

  • Voltage - Collector Emitter Breakdown (Max):

    -

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    -

  • Vce Saturation (Max) @ Ib, Ic:

    -

  • Current - Collector Cutoff (Max):

    -

  • Frequency - Transition:

    -

  • Power - Max:

    -

  • Mounting Type:

    -

  • Package / Case:

    -

  • Supplier Device Package:

    -

Stock:

0

1

Part Number:

RN4991FE-LF-CT

Manufacturer:

Toshiba Semiconductor and Storage

Description:

NPN + PNP BRT Q1BSR10KOHM Q1BERI

  • Series:

    -

  • Transistor Type:

    1 NPN, 1 PNP - Pre-Biased (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    120 @ 1mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    100nA (ICBO)

  • Frequency - Transition:

    250MHz, 200MHz

  • Power - Max:

    100mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOT-563, SOT-666

  • Supplier Device Package:

    ES6

Stock:

0

1

Part Number:

PUMH1-DG-B4X

Manufacturer:

Nexperia

Description:

TRANS PREBIAS 2NPN 50V 6TSSOP

  • Series:

    -

  • Transistor Type:

    2 NPN - Pre-Biased (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    60 @ 5mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    150mV @ 500µA, 10mA

  • Current - Collector Cutoff (Max):

    100nA

  • Frequency - Transition:

    230MHz

  • Power - Max:

    300mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-TSSOP, SC-88, SOT-363

  • Supplier Device Package:

    6-TSSOP

Stock:

0

1

Part Number:

EMH51T2R

Manufacturer:

Rohm Semiconductor

Description:

NPN+NPN DIGITAL TRANSISTOR(WITH

  • Series:

    -

  • Transistor Type:

    2 NPN - Pre-Biased (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    60 @ 5mA, 10V

  • Vce Saturation (Max) @ Ib, Ic:

    150mV @ 500µA, 5mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    250MHz

  • Power - Max:

    150mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOT-563, SOT-666

  • Supplier Device Package:

    EMT6

Stock:

24000

1

Part Number:

UMG2N-TP

Manufacturer:

Micro Commercial Co

Description:

TRANSISTOR

  • Series:

    -

  • Transistor Type:

    2 NPN - Pre-Biased (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    68 @ 5mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 500µA, 10mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    250MHz

  • Power - Max:

    150mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    5-TSSOP, SC-70-5, SOT-353

  • Supplier Device Package:

    SOT-353

Stock:

0

1

Part Number:

RN4981-LXHF-CT

Manufacturer:

Toshiba Semiconductor and Storage

Description:

AUTO AEC-Q NPN + PNP BRT, Q1BSR=

  • Series:

    -

  • Transistor Type:

    1 NPN, 1 PNP - Pre-Biased (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    30 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    250MHz, 200MHz

  • Power - Max:

    200mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-TSSOP, SC-88, SOT-363

  • Supplier Device Package:

    US6

Stock:

18000

1

Part Number:

PUMD3-ZL-165

Manufacturer:

NXP

Description:

PUMD3 - NPN/PNP RESISTOR-EQUIPPE

  • Series:

    -

  • Transistor Type:

    -

  • Current - Collector (Ic) (Max):

    -

  • Voltage - Collector Emitter Breakdown (Max):

    -

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    -

  • Vce Saturation (Max) @ Ib, Ic:

    -

  • Current - Collector Cutoff (Max):

    -

  • Frequency - Transition:

    -

  • Power - Max:

    -

  • Mounting Type:

    -

  • Package / Case:

    -

  • Supplier Device Package:

    -

Stock:

0

1

获取最新资讯

每日获取来自全球众多供应商的最新优惠资讯