Part Number:
PUMH13-QX
Manufacturer:
Nexperia
Description:
PUMH13-Q/SOT363/SC-88
Series:
-
Transistor Type:
2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max):
100mA
Voltage - Collector Emitter Breakdown (Max):
50V
Resistor - Base (R1):
-
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:
100mV @ 250µA, 5mA
Current - Collector Cutoff (Max):
1µA
Frequency - Transition:
230MHz
Power - Max:
200mW
Mounting Type:
Surface Mount
Package / Case:
6-TSSOP, SC-88, SOT-363
Supplier Device Package:
6-TSSOP
Stock:
0
Part Number:
PUMH11-ZLF
Manufacturer:
Nexperia
Description:
TRANS PREBIAS
Series:
-
Transistor Type:
2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max):
100mA
Voltage - Collector Emitter Breakdown (Max):
50V
Resistor - Base (R1):
-
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:
150mV @ 500µA, 10mA
Current - Collector Cutoff (Max):
1µA
Frequency - Transition:
230MHz
Power - Max:
300mW
Mounting Type:
Surface Mount
Package / Case:
6-TSSOP, SC-88, SOT-363
Supplier Device Package:
6-TSSOP
Stock:
0
Part Number:
PUMH11-ZLX
Manufacturer:
Nexperia
Description:
TRANS PREBIAS
Series:
-
Transistor Type:
2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max):
100mA
Voltage - Collector Emitter Breakdown (Max):
50V
Resistor - Base (R1):
-
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:
150mV @ 500µA, 10mA
Current - Collector Cutoff (Max):
1µA
Frequency - Transition:
230MHz
Power - Max:
300mW
Mounting Type:
Surface Mount
Package / Case:
6-TSSOP, SC-88, SOT-363
Supplier Device Package:
6-TSSOP
Stock:
0
Part Number:
RN4903-LXHF-CT
Manufacturer:
Toshiba Semiconductor and Storage
Description:
AUTO AEC-Q TR PNP + NPN BRT Q1BS
Series:
-
Transistor Type:
1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):
100mA
Voltage - Collector Emitter Breakdown (Max):
50V
Resistor - Base (R1):
-
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):
500nA
Frequency - Transition:
200MHz, 250MHz
Power - Max:
200mW
Mounting Type:
Surface Mount
Package / Case:
6-TSSOP, SC-88, SOT-363
Supplier Device Package:
US6
Stock:
18000
Part Number:
RN1702-LF
Manufacturer:
Toshiba Semiconductor and Storage
Description:
NPNX2 BRT Q1BSR10KOHM Q1BER10KOH
Series:
-
Transistor Type:
2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max):
100mA
Voltage - Collector Emitter Breakdown (Max):
50V
Resistor - Base (R1):
-
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):
500nA
Frequency - Transition:
250MHz
Power - Max:
200mW
Mounting Type:
Surface Mount
Package / Case:
5-TSSOP, SC-70-5, SOT-353
Supplier Device Package:
USV
Stock:
17967
Part Number:
UMF20NTR
Manufacturer:
Rohm Semiconductor
Description:
TRANS DIGITAL BJT NPN 50V 150MA/
Series:
-
Transistor Type:
1 NPN Pre-Biased, 1 NPN
Current - Collector (Ic) (Max):
100mA, 150mA
Voltage - Collector Emitter Breakdown (Max):
50V
Resistor - Base (R1):
-
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 20mA, 5V / 180 @ 1mA, 6V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 500µA, 10mA / 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max):
500nA, 100nA (ICBO)
Frequency - Transition:
250MHz, 180MHz
Power - Max:
150mW
Mounting Type:
Surface Mount
Package / Case:
6-TSSOP, SC-88, SOT-363
Supplier Device Package:
UMT6
Stock:
0
Part Number:
UMD6NFHATR
Manufacturer:
Rohm Semiconductor
Description:
PNP+NPN DIGITAL TRANSISTOR (WITH
Series:
-
Transistor Type:
1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):
100mA
Voltage - Collector Emitter Breakdown (Max):
50V
Resistor - Base (R1):
-
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):
500nA (ICBO)
Frequency - Transition:
250MHz
Power - Max:
150mW
Mounting Type:
Surface Mount
Package / Case:
6-TSSOP, SC-88, SOT-363
Supplier Device Package:
UMT6
Stock:
18000
Part Number:
FMC2T148
Manufacturer:
Rohm Semiconductor
Description:
TRANS DGTL BJT NPN/PNP SMT5
Series:
-
Transistor Type:
-
Current - Collector (Ic) (Max):
-
Voltage - Collector Emitter Breakdown (Max):
-
Resistor - Base (R1):
-
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
-
Vce Saturation (Max) @ Ib, Ic:
-
Current - Collector Cutoff (Max):
-
Frequency - Transition:
-
Power - Max:
-
Mounting Type:
-
Package / Case:
-
Supplier Device Package:
-
Stock:
0
Part Number:
RN2906FE-LF-CT
Manufacturer:
Toshiba Semiconductor and Storage
Description:
PNPX2 BRT Q1BSR4.7KOHM Q1BER47KO
Series:
-
Transistor Type:
2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):
100mA
Voltage - Collector Emitter Breakdown (Max):
50V
Resistor - Base (R1):
-
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):
500nA
Frequency - Transition:
200MHz
Power - Max:
100mW
Mounting Type:
Surface Mount
Package / Case:
SOT-563, SOT-666
Supplier Device Package:
ES6
Stock:
11928
Part Number:
PUMH15-QX
Manufacturer:
Nexperia
Description:
PUMH15-Q/SOT363/SC-88
Series:
-
Transistor Type:
2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max):
100mA
Voltage - Collector Emitter Breakdown (Max):
50V
Resistor - Base (R1):
-
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:
150mV @ 500µA , 10mA
Current - Collector Cutoff (Max):
1µA
Frequency - Transition:
230MHz
Power - Max:
200mW
Mounting Type:
Surface Mount
Package / Case:
6-TSSOP, SC-88, SOT-363
Supplier Device Package:
6-TSSOP
Stock:
0
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