Part Number:
NHUMD10X
Manufacturer:
Nexperia
Description:
TRANS PREBIAS 1NPN 1PNP 6TSSOP
Series:
-
Transistor Type:
1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):
100mA
Voltage - Collector Emitter Breakdown (Max):
80V
Resistor - Base (R1):
-
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:
100mV @ 500µA, 10mA
Current - Collector Cutoff (Max):
100nA
Frequency - Transition:
170MHz, 150MHz
Power - Max:
350mW
Mounting Type:
Surface Mount
Package / Case:
6-TSSOP, SC-88, SOT-363
Supplier Device Package:
6-TSSOP
Stock:
53910
Part Number:
UMH13N-TP
Manufacturer:
Micro Commercial Co
Description:
Interface
Series:
-
Transistor Type:
2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max):
100mA
Voltage - Collector Emitter Breakdown (Max):
50V
Resistor - Base (R1):
-
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 500µA, 10mA
Current - Collector Cutoff (Max):
500nA
Frequency - Transition:
250MHz
Power - Max:
150mW
Mounting Type:
Surface Mount
Package / Case:
6-TSSOP, SC-88, SOT-363
Supplier Device Package:
SOT-363
Stock:
0
Part Number:
RN2714-LF
Manufacturer:
Toshiba Semiconductor and Storage
Description:
PNPX2 BRT Q1BSR1KOHM Q1BER10KOHM
Series:
-
Transistor Type:
2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):
100mA
Voltage - Collector Emitter Breakdown (Max):
50V
Resistor - Base (R1):
-
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):
500nA
Frequency - Transition:
-
Power - Max:
200mW
Mounting Type:
Surface Mount
Package / Case:
5-TSSOP, SC-70-5, SOT-353
Supplier Device Package:
USV
Stock:
0
Part Number:
UMF18NTR
Manufacturer:
Rohm Semiconductor
Description:
TRANS DIGITAL BJT NPN/PNP 50V 10
Series:
-
Transistor Type:
1 NPN - Pre-Biased, 1 PNP
Current - Collector (Ic) (Max):
100mA, 150mA
Voltage - Collector Emitter Breakdown (Max):
50V
Resistor - Base (R1):
-
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
68 @ 5mA, 5V / 180 @ 1mA, 6V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 500µA, 10mA / 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max):
500nA, 100nA (ICBO)
Frequency - Transition:
250MHz, 140MHz
Power - Max:
150mW
Mounting Type:
Surface Mount
Package / Case:
6-TSSOP, SC-88, SOT-363
Supplier Device Package:
UMT6
Stock:
0
Part Number:
RN4988FE-LXHF-CT
Manufacturer:
Toshiba Semiconductor and Storage
Description:
AUTO AEC-Q TR NPN+PNP Q1BSR=22KO
Series:
-
Transistor Type:
1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):
100mA
Voltage - Collector Emitter Breakdown (Max):
50V
Resistor - Base (R1):
-
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):
500nA
Frequency - Transition:
250MHz, 200MHz
Power - Max:
100mW
Mounting Type:
Surface Mount
Package / Case:
SOT-563, SOT-666
Supplier Device Package:
ES6
Stock:
24000
Part Number:
RN4901-LXHF-CT
Manufacturer:
Toshiba Semiconductor and Storage
Description:
AUTO AEC-Q 2-IN-1 (POINT-SYM) PN
Series:
-
Transistor Type:
1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):
100mA
Voltage - Collector Emitter Breakdown (Max):
50V
Resistor - Base (R1):
-
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):
500nA
Frequency - Transition:
200MHz, 250MHz
Power - Max:
200mW
Mounting Type:
Surface Mount
Package / Case:
6-TSSOP, SC-88, SOT-363
Supplier Device Package:
US6
Stock:
18000
Part Number:
RN4988FE-LF-CT
Manufacturer:
Toshiba Semiconductor and Storage
Description:
NPN + PNP BRT Q1BSR22KOHM Q1BER4
Series:
-
Transistor Type:
1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):
100mA
Voltage - Collector Emitter Breakdown (Max):
50V
Resistor - Base (R1):
-
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):
500nA
Frequency - Transition:
250MHz, 200MHz
Power - Max:
100mW
Mounting Type:
Surface Mount
Package / Case:
SOT-563, SOT-666
Supplier Device Package:
ES6
Stock:
12000
Part Number:
RN2903FE-LXHF-CT
Manufacturer:
Toshiba Semiconductor and Storage
Description:
AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Series:
-
Transistor Type:
2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):
100mA
Voltage - Collector Emitter Breakdown (Max):
50V
Resistor - Base (R1):
-
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):
500nA
Frequency - Transition:
200MHz
Power - Max:
100mW
Mounting Type:
Surface Mount
Package / Case:
SOT-563, SOT-666
Supplier Device Package:
ES6
Stock:
24000
Part Number:
PIMN32X
Manufacturer:
Nexperia
Description:
TRANS PREBIAS 2NPN 50V 6TSOP
Series:
-
Transistor Type:
2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max):
500mA
Voltage - Collector Emitter Breakdown (Max):
50V
Resistor - Base (R1):
-
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic:
100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max):
500nA
Frequency - Transition:
225MHz
Power - Max:
290mW
Mounting Type:
Surface Mount
Package / Case:
SC-74, SOT-457
Supplier Device Package:
6-TSOP
Stock:
26838
Part Number:
PIMN31F
Manufacturer:
Nexperia
Description:
PIMN31/SOT457/SC-74
Series:
-
Transistor Type:
1 NPN, 1 PNP - Pre-Biased
Current - Collector (Ic) (Max):
500mA
Voltage - Collector Emitter Breakdown (Max):
50V
Resistor - Base (R1):
-
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max):
500nA
Frequency - Transition:
-
Power - Max:
290mW
Mounting Type:
Surface Mount
Package / Case:
SC-74, SOT-457
Supplier Device Package:
SC-74
Stock:
0
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