Transistors (92295)

Transistors are fundamental semiconductor devices that act as electrically controlled switches or signal amplifiers within electronic circuits. By applying a small current or voltage to one terminal, they precisely regulate a much larger current flow between two other terminals.

Records 92295

Page 9181/9230

Part Number:

MQ2N5114UB

Manufacturer:

Microchip Technology

Description:

JFET P-CH 30V UB

Series:
-
FET Type:
P-Channel
Voltage - Breakdown (V(BR)GSS):
30 V
Drain to Source Voltage (Vdss):
30 V
Current - Drain (Idss) @ Vds (Vgs=0):
30 mA @ 18 V
Current Drain (Id) - Max:
-
Voltage - Cutoff (VGS off) @ Id:
5 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds:
25pF @ 15V
Resistance - RDS(On):
75 Ohms
Power - Max:
500 mW
Operating Temperature:
-65°C ~ 200°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
3-SMD, No Lead
Supplier Device Package:
UB

Stock:

Part Number:

MQ2N5114UB/TR

Manufacturer:

Microchip Technology

Description:

JFET P-CH 30V UB

Series:
-
FET Type:
P-Channel
Voltage - Breakdown (V(BR)GSS):
30 V
Drain to Source Voltage (Vdss):
30 V
Current - Drain (Idss) @ Vds (Vgs=0):
30 mA @ 18 V
Current Drain (Id) - Max:
-
Voltage - Cutoff (VGS off) @ Id:
5 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds:
25pF @ 15V
Resistance - RDS(On):
75 Ohms
Power - Max:
500 mW
Operating Temperature:
-65°C ~ 200°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
3-SMD, No Lead
Supplier Device Package:
UB

Stock:

Part Number:

MQ2N5115

Manufacturer:

Microchip Technology

Description:

JFET P-CH 30V TO18

Series:
-
FET Type:
P-Channel
Voltage - Breakdown (V(BR)GSS):
30 V
Drain to Source Voltage (Vdss):
30 V
Current - Drain (Idss) @ Vds (Vgs=0):
15 mA @ 15 V
Current Drain (Id) - Max:
-
Voltage - Cutoff (VGS off) @ Id:
3 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds:
25pF @ 15V
Resistance - RDS(On):
100 Ohms
Power - Max:
500 mW
Operating Temperature:
-65°C ~ 200°C (TJ)
Mounting Type:
Through Hole
Package / Case:
TO-206AA, TO-18-3 Metal Can
Supplier Device Package:
TO-18 (TO-206AA)

Stock:

Part Number:

MQ2N5115UB

Manufacturer:

Microchip Technology

Description:

JFET P-CH 30V UB

Series:
-
FET Type:
P-Channel
Voltage - Breakdown (V(BR)GSS):
30 V
Drain to Source Voltage (Vdss):
30 V
Current - Drain (Idss) @ Vds (Vgs=0):
15 mA @ 15 V
Current Drain (Id) - Max:
-
Voltage - Cutoff (VGS off) @ Id:
3 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds:
25pF @ 15V
Resistance - RDS(On):
100 Ohms
Power - Max:
500 mW
Operating Temperature:
-65°C ~ 200°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
3-SMD, No Lead
Supplier Device Package:
UB

Stock:

Part Number:

MQ2N5115UB/TR

Manufacturer:

Microchip Technology

Description:

JFET P-CH 30V UB

Series:
-
FET Type:
P-Channel
Voltage - Breakdown (V(BR)GSS):
30 V
Drain to Source Voltage (Vdss):
30 V
Current - Drain (Idss) @ Vds (Vgs=0):
15 mA @ 15 V
Current Drain (Id) - Max:
-
Voltage - Cutoff (VGS off) @ Id:
3 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds:
25pF @ 15V
Resistance - RDS(On):
100 Ohms
Power - Max:
500 mW
Operating Temperature:
-65°C ~ 200°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
3-SMD, No Lead
Supplier Device Package:
UB

Stock:

Part Number:

MQ2N5116

Manufacturer:

Microchip Technology

Description:

JFET P-CH 30V TO18

Series:
-
FET Type:
P-Channel
Voltage - Breakdown (V(BR)GSS):
30 V
Drain to Source Voltage (Vdss):
30 V
Current - Drain (Idss) @ Vds (Vgs=0):
5 mA @ 15 V
Current Drain (Id) - Max:
-
Voltage - Cutoff (VGS off) @ Id:
1 V @ 1 mA
Input Capacitance (Ciss) (Max) @ Vds:
27pF @ 15V
Resistance - RDS(On):
175 Ohms
Power - Max:
500 mW
Operating Temperature:
-65°C ~ 200°C (TJ)
Mounting Type:
Through Hole
Package / Case:
TO-206AA, TO-18-3 Metal Can
Supplier Device Package:
TO-18

Stock:

Part Number:

MQ2N5116UB

Manufacturer:

Microchip Technology

Description:

JFET P-CH 30V UB

Series:
-
FET Type:
P-Channel
Voltage - Breakdown (V(BR)GSS):
30 V
Drain to Source Voltage (Vdss):
30 V
Current - Drain (Idss) @ Vds (Vgs=0):
5 mA @ 15 V
Current Drain (Id) - Max:
-
Voltage - Cutoff (VGS off) @ Id:
1 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds:
27pF @ 15V
Resistance - RDS(On):
175 Ohms
Power - Max:
500 mW
Operating Temperature:
-65°C ~ 200°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
3-SMD, No Lead
Supplier Device Package:
UB

Stock:

Part Number:

MQ2N5116UB/TR

Manufacturer:

Microchip Technology

Description:

JFET P-CH 30V UB

Series:
-
FET Type:
P-Channel
Voltage - Breakdown (V(BR)GSS):
30 V
Drain to Source Voltage (Vdss):
30 V
Current - Drain (Idss) @ Vds (Vgs=0):
5 mA @ 15 V
Current Drain (Id) - Max:
-
Voltage - Cutoff (VGS off) @ Id:
1 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds:
27pF @ 15V
Resistance - RDS(On):
175 Ohms
Power - Max:
500 mW
Operating Temperature:
-65°C ~ 200°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
3-SMD, No Lead
Supplier Device Package:
UB

Stock:

Part Number:

MS2N4092

Manufacturer:

Microchip Technology

Description:

JFET N-CH 40V TO18

Series:
-
FET Type:
N-Channel
Voltage - Breakdown (V(BR)GSS):
40 V
Drain to Source Voltage (Vdss):
40 V
Current - Drain (Idss) @ Vds (Vgs=0):
15 mA @ 20 V
Current Drain (Id) - Max:
-
Voltage - Cutoff (VGS off) @ Id:
-
Input Capacitance (Ciss) (Max) @ Vds:
16pF @ 20V
Resistance - RDS(On):
50 Ohms
Power - Max:
360 mW
Operating Temperature:
-65°C ~ 175°C (TJ)
Mounting Type:
Through Hole
Package / Case:
TO-206AA, TO-18-3 Metal Can
Supplier Device Package:
TO-18 (TO-206AA)

Stock:

Part Number:

MS2N5116

Manufacturer:

Microchip Technology

Description:

JFET P-CH 30V TO18

Series:
-
FET Type:
P-Channel
Voltage - Breakdown (V(BR)GSS):
30 V
Drain to Source Voltage (Vdss):
30 V
Current - Drain (Idss) @ Vds (Vgs=0):
5 mA @ 15 V
Current Drain (Id) - Max:
-
Voltage - Cutoff (VGS off) @ Id:
1 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds:
27pF @ 15V
Resistance - RDS(On):
175 Ohms
Power - Max:
500 mW
Operating Temperature:
-65°C ~ 200°C (TJ)
Mounting Type:
Through Hole
Package / Case:
TO-206AA, TO-18-3 Metal Can
Supplier Device Package:
TO-18 (TO-206AA)

Stock:

Transistors (92295)

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