Part Number:
ES3G-R6
Manufacturer:
Taiwan Semiconductor Corporation
Description:
DIODE GEN PURP 400V 3A DO214AB
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
400 V
Current - Average Rectified (Io):
3A
Voltage - Forward (Vf) (Max) @ If:
1.3 V @ 3 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
35 ns
Current - Reverse Leakage @ Vr:
10 µA @ 400 V
Capacitance @ Vr, F:
30pF @ 4V, 1MHz
Mounting Type:
Surface Mount
Package / Case:
DO-214AB, SMC
Supplier Device Package:
DO-214AB (SMC)
Operating Temperature - Junction:
-55°C ~ 150°C
Stock:
0
Part Number:
SMD210PLQ-TP
Manufacturer:
Micro Commercial Co
Description:
SCHOTTKY BARRIER RECTIFIERS 100V
Series:
-
Diode Type:
Schottky
Voltage - DC Reverse (Vr) (Max):
100 V
Current - Average Rectified (Io):
2A
Voltage - Forward (Vf) (Max) @ If:
800 mV @ 2 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
5 µA @ 100 V
Capacitance @ Vr, F:
62pF @ 4V, 1MHz
Mounting Type:
Surface Mount
Package / Case:
SOD-123F
Supplier Device Package:
SOD-123FL
Operating Temperature - Junction:
-55°C ~ 175°C
Stock:
14970
Part Number:
RSX048LAP2STR
Manufacturer:
Rohm Semiconductor
Description:
200V 3A, SINGLE, PMDTM, ULTRA LO
Series:
-
Diode Type:
Schottky
Voltage - DC Reverse (Vr) (Max):
200 V
Current - Average Rectified (Io):
3A
Voltage - Forward (Vf) (Max) @ If:
870 mV @ 3 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
200 nA @ 200 V
Capacitance @ Vr, F:
-
Mounting Type:
Surface Mount
Package / Case:
SOD-128
Supplier Device Package:
SOD-128
Operating Temperature - Junction:
175°C
Stock:
0
Part Number:
JANTXV1N5418US-TR
Manufacturer:
Microchip Technology
Description:
DIODE GEN PURP 400V 3A D-5B
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
400 V
Current - Average Rectified (Io):
3A
Voltage - Forward (Vf) (Max) @ If:
1.5 V @ 9 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
150 ns
Current - Reverse Leakage @ Vr:
1 µA @ 400 V
Capacitance @ Vr, F:
-
Mounting Type:
Surface Mount
Package / Case:
SQ-MELF, E
Supplier Device Package:
D-5B
Operating Temperature - Junction:
-65°C ~ 175°C
Stock:
0
Part Number:
STD10L45
Manufacturer:
SMC Diode Solutions
Description:
10A 45V,DPAK, TRENCH SCHOTTKY
Series:
-
Diode Type:
-
Voltage - DC Reverse (Vr) (Max):
-
Current - Average Rectified (Io):
-
Voltage - Forward (Vf) (Max) @ If:
-
Speed:
-
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
-
Capacitance @ Vr, F:
-
Mounting Type:
-
Package / Case:
-
Supplier Device Package:
-
Operating Temperature - Junction:
-
Stock:
0
Part Number:
PMEG1020EA-QX
Manufacturer:
Nexperia
Description:
PMEG1020EA-Q/SOD323/SOD2
Series:
-
Diode Type:
Schottky
Voltage - DC Reverse (Vr) (Max):
10 V
Current - Average Rectified (Io):
2A
Voltage - Forward (Vf) (Max) @ If:
460 mV @ 2 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
3 mA @ 10 V
Capacitance @ Vr, F:
37pF @ 5V, 1MHz
Mounting Type:
Surface Mount
Package / Case:
SC-76, SOD-323
Supplier Device Package:
SOD-323
Operating Temperature - Junction:
150°C
Stock:
8994
Part Number:
JANTX1N3893AR
Manufacturer:
Microchip Technology
Description:
DIODE GEN PURP 400V 20A DO203AA
Series:
-
Diode Type:
Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max):
400 V
Current - Average Rectified (Io):
20A
Voltage - Forward (Vf) (Max) @ If:
1.5 V @ 38 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
150 ns
Current - Reverse Leakage @ Vr:
-
Capacitance @ Vr, F:
115pF @ 10V, 1MHz
Mounting Type:
Stud Mount
Package / Case:
DO-203AA, DO-4, Stud
Supplier Device Package:
DO-203AA (DO-4)
Operating Temperature - Junction:
-65°C ~ 175°C
Stock:
0
Part Number:
PNE20040EPEZ
Manufacturer:
Nexperia
Description:
DIODE GEN PURP 200V 4A CFP15B
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
200 V
Current - Average Rectified (Io):
4A
Voltage - Forward (Vf) (Max) @ If:
930 mV @ 4 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
30 ns
Current - Reverse Leakage @ Vr:
1 µA @ 200 V
Capacitance @ Vr, F:
61pF @ 4V, 1MHz
Mounting Type:
Surface Mount
Package / Case:
TO-277, 3-PowerDFN
Supplier Device Package:
CFP15B
Operating Temperature - Junction:
175°C
Stock:
14400
Part Number:
1N4138R
Manufacturer:
Microchip Technology
Description:
DIODE GEN PURP REV 600V 70A DO5
Series:
-
Diode Type:
Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max):
600 V
Current - Average Rectified (Io):
70A
Voltage - Forward (Vf) (Max) @ If:
1.25 V @ 200 A
Speed:
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
25 µA @ 600 V
Capacitance @ Vr, F:
-
Mounting Type:
Stud Mount
Package / Case:
DO-203AB, DO-5, Stud
Supplier Device Package:
DO-5 (DO-203AB)
Operating Temperature - Junction:
-65°C ~ 200°C
Stock:
0
Part Number:
1N6910UTK2-TR
Manufacturer:
Microchip Technology
Description:
DIODE SCHOTTKY 15V 25A THINKEY2
Series:
-
Diode Type:
Schottky
Voltage - DC Reverse (Vr) (Max):
15 V
Current - Average Rectified (Io):
25A
Voltage - Forward (Vf) (Max) @ If:
520 mV @ 25 A
Speed:
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
1.2 mA @ 15 V
Capacitance @ Vr, F:
2000pF @ 5V, 1MHz
Mounting Type:
Surface Mount
Package / Case:
ThinKey™2
Supplier Device Package:
ThinKey™2
Operating Temperature - Junction:
-65°C ~ 150°C
Stock:
0
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