Part Number:
ES3D-R6
Manufacturer:
Taiwan Semiconductor Corporation
Description:
DIODE GEN PURP 200V 3A DO214AB
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
200 V
Current - Average Rectified (Io):
3A
Voltage - Forward (Vf) (Max) @ If:
950 mV @ 3 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
35 ns
Current - Reverse Leakage @ Vr:
10 µA @ 200 V
Capacitance @ Vr, F:
45pF @ 4V, 1MHz
Mounting Type:
Surface Mount
Package / Case:
DO-214AB, SMC
Supplier Device Package:
DO-214AB (SMC)
Operating Temperature - Junction:
-55°C ~ 150°C
Stock:
0
Part Number:
ER2GHE3-LTP
Manufacturer:
Micro Commercial Co
Description:
Interface
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
400 V
Current - Average Rectified (Io):
2A
Voltage - Forward (Vf) (Max) @ If:
1.3 V @ 2 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
35 ns
Current - Reverse Leakage @ Vr:
5 µA @ 400 V
Capacitance @ Vr, F:
25pF @ 4V, 1MHz
Mounting Type:
Surface Mount
Package / Case:
DO-214AA, SMB
Supplier Device Package:
DO-214AA (SMB)
Operating Temperature - Junction:
-55°C ~ 150°C
Stock:
0
Part Number:
SRAS20100
Manufacturer:
Taiwan Semiconductor Corporation
Description:
DIODE SCHOTTKY 100V 20A TO263AB
Series:
-
Diode Type:
Schottky
Voltage - DC Reverse (Vr) (Max):
100 V
Current - Average Rectified (Io):
20A
Voltage - Forward (Vf) (Max) @ If:
920 mV @ 20 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
100 µA @ 100 V
Capacitance @ Vr, F:
-
Mounting Type:
Surface Mount
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package:
TO-263AB (D2PAK)
Operating Temperature - Junction:
-55°C ~ 150°C
Stock:
0
Part Number:
MBR1050F-BP
Manufacturer:
Micro Commercial Co
Description:
Interface
Series:
-
Diode Type:
Schottky
Voltage - DC Reverse (Vr) (Max):
50 V
Current - Average Rectified (Io):
10A
Voltage - Forward (Vf) (Max) @ If:
750 mV @ 10 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
500 µA @ 50 V
Capacitance @ Vr, F:
-
Mounting Type:
Through Hole
Package / Case:
TO-220-2 Isolated Tab
Supplier Device Package:
ITO-220AC
Operating Temperature - Junction:
-50°C ~ 150°C
Stock:
0
Part Number:
1SS400UNTE61
Manufacturer:
Rohm Semiconductor
Description:
DIODE GENERAL PURPOSE SMD
Series:
-
Diode Type:
-
Voltage - DC Reverse (Vr) (Max):
-
Current - Average Rectified (Io):
-
Voltage - Forward (Vf) (Max) @ If:
-
Speed:
-
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
-
Capacitance @ Vr, F:
-
Mounting Type:
-
Package / Case:
-
Supplier Device Package:
-
Operating Temperature - Junction:
-
Stock:
0
Part Number:
NXPSC16650B6J
Manufacturer:
WeEn Semiconductors
Description:
DIODE SIL CARBIDE 650V 16A D2PAK
Series:
-
Diode Type:
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io):
16A
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 16 A
Speed:
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):
0 ns
Current - Reverse Leakage @ Vr:
100 µA @ 650 V
Capacitance @ Vr, F:
534pF @ 1V, 1MHz
Mounting Type:
Surface Mount
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package:
D2PAK
Operating Temperature - Junction:
175°C (Max)
Stock:
0
Part Number:
MBR40100CT-C0G
Manufacturer:
Taiwan Semiconductor Corporation
Description:
DIODE
Series:
-
Diode Type:
-
Voltage - DC Reverse (Vr) (Max):
-
Current - Average Rectified (Io):
-
Voltage - Forward (Vf) (Max) @ If:
-
Speed:
-
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
-
Capacitance @ Vr, F:
-
Mounting Type:
-
Package / Case:
-
Supplier Device Package:
-
Operating Temperature - Junction:
-
Stock:
0
Part Number:
PMEG200G20ELRX
Manufacturer:
Nexperia
Description:
PMEG200G20ELR/SOD123W/SOD2
Series:
-
Diode Type:
SiGe (Silicon Germanium)
Voltage - DC Reverse (Vr) (Max):
200 V
Current - Average Rectified (Io):
2A
Voltage - Forward (Vf) (Max) @ If:
880 mV @ 2 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
32 ns
Current - Reverse Leakage @ Vr:
30 nA @ 200 V
Capacitance @ Vr, F:
58pF @ 1V, 1MHz
Mounting Type:
Surface Mount
Package / Case:
SOD-123W
Supplier Device Package:
SOD-123W
Operating Temperature - Junction:
175°C
Stock:
65292
Part Number:
CD4150V
Manufacturer:
Microchip Technology
Description:
DIODE GEN PURP 50V 200MA DIE
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
50 V
Current - Average Rectified (Io):
200mA
Voltage - Forward (Vf) (Max) @ If:
1 V @ 200 mA
Speed:
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):
4 ns
Current - Reverse Leakage @ Vr:
100 nA @ 50 V
Capacitance @ Vr, F:
2.5pF @ 0V, 1MHz
Mounting Type:
Surface Mount
Package / Case:
Die
Supplier Device Package:
Die
Operating Temperature - Junction:
-55°C ~ 175°C
Stock:
0
Part Number:
MUR820-BP
Manufacturer:
Micro Commercial Co
Description:
Interface
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
200 V
Current - Average Rectified (Io):
8A
Voltage - Forward (Vf) (Max) @ If:
975 mV @ 8 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
35 ns
Current - Reverse Leakage @ Vr:
5 µA @ 200 V
Capacitance @ Vr, F:
-
Mounting Type:
Through Hole
Package / Case:
TO-220-2
Supplier Device Package:
TO-220AC
Operating Temperature - Junction:
-55°C ~ 150°C
Stock:
0
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