Part Number:
US5D-TP
Manufacturer:
Micro Commercial Co
Description:
Interface
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
200 V
Current - Average Rectified (Io):
5A
Voltage - Forward (Vf) (Max) @ If:
1 V @ 5 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
50 ns
Current - Reverse Leakage @ Vr:
10 µA @ 200 V
Capacitance @ Vr, F:
-
Mounting Type:
Surface Mount
Package / Case:
DO-214AB, SMC
Supplier Device Package:
SMC (DO-214AB)
Operating Temperature - Junction:
-55°C ~ 150°C
Stock:
0
Part Number:
JANTX1N6638-TR
Manufacturer:
Microchip Technology
Description:
DIODE GP REV 150V 300MA DO35
Series:
-
Diode Type:
Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max):
150 V
Current - Average Rectified (Io):
300mA
Voltage - Forward (Vf) (Max) @ If:
1.1 V @ 200 mA
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
4.5 ns
Current - Reverse Leakage @ Vr:
500 nA @ 125 V
Capacitance @ Vr, F:
2pF @ 0V, 1MHz
Mounting Type:
Through Hole
Package / Case:
DO-204AH, DO-35, Axial
Supplier Device Package:
DO-204AH (DO-35)
Operating Temperature - Junction:
-65°C ~ 200°C
Stock:
0
Part Number:
SDS120J003D3-ISARH
Manufacturer:
Luminus Devices Inc.
Description:
DIODE 1200V-3A TO252-2L
Series:
Sanan TO252
Diode Type:
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max):
1200 V
Current - Average Rectified (Io):
3A
Voltage - Forward (Vf) (Max) @ If:
1.35 V @ 3 A
Speed:
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):
0 ns
Current - Reverse Leakage @ Vr:
12 µA @ 1.2 kV
Capacitance @ Vr, F:
-
Mounting Type:
Surface Mount
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package:
TO-252-2L
Operating Temperature - Junction:
-55°C ~ 175°C
Stock:
0
Part Number:
GKR13012
Manufacturer:
GeneSiC Semiconductor
Description:
DIODE GP 1.2KV 165A DO205AA
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
1200 V
Current - Average Rectified (Io):
165A
Voltage - Forward (Vf) (Max) @ If:
1.5 V @ 60 A
Speed:
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
22 mA @ 1200 V
Capacitance @ Vr, F:
-
Mounting Type:
Chassis, Stud Mount
Package / Case:
DO-205AA, DO-8, Stud
Supplier Device Package:
DO-205AA (DO-8)
Operating Temperature - Junction:
-40°C ~ 180°C
Stock:
0
Part Number:
JAN1N4946-TR
Manufacturer:
Microchip Technology
Description:
DIODE GEN PURP 600V 1A
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
600 V
Current - Average Rectified (Io):
1A
Voltage - Forward (Vf) (Max) @ If:
1.3 V @ 1 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
250 ns
Current - Reverse Leakage @ Vr:
1 µA @ 600 V
Capacitance @ Vr, F:
-
Mounting Type:
Through Hole
Package / Case:
A, Axial
Supplier Device Package:
A, Axial
Operating Temperature - Junction:
-65°C ~ 175°C
Stock:
0
Part Number:
SK15H45H
Manufacturer:
Taiwan Semiconductor Corporation
Description:
15A, 45V, SCHOTTKY RECTIFIER
Series:
-
Diode Type:
Schottky
Voltage - DC Reverse (Vr) (Max):
45 V
Current - Average Rectified (Io):
15A
Voltage - Forward (Vf) (Max) @ If:
560 mV @ 15 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
150 µA @ 45 V
Capacitance @ Vr, F:
-
Mounting Type:
Through Hole
Package / Case:
R-6, Axial
Supplier Device Package:
R-6
Operating Temperature - Junction:
-55°C ~ 200°C
Stock:
0
Part Number:
UES707
Manufacturer:
Microchip Technology
Description:
UFR,FRR
Series:
-
Diode Type:
-
Voltage - DC Reverse (Vr) (Max):
-
Current - Average Rectified (Io):
-
Voltage - Forward (Vf) (Max) @ If:
-
Speed:
-
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
-
Capacitance @ Vr, F:
-
Mounting Type:
-
Package / Case:
-
Supplier Device Package:
-
Operating Temperature - Junction:
-
Stock:
0
Part Number:
UES704
Manufacturer:
Microchip Technology
Description:
DIODE GEN PURP 200V 20A DO203AA
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
200 V
Current - Average Rectified (Io):
20A
Voltage - Forward (Vf) (Max) @ If:
1.25 V @ 20 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
50 ns
Current - Reverse Leakage @ Vr:
-
Capacitance @ Vr, F:
-
Mounting Type:
Stud Mount
Package / Case:
DO-203AA, DO-4, Stud
Supplier Device Package:
DO-203AA (DO-4)
Operating Temperature - Junction:
-
Stock:
0
Part Number:
UES705
Manufacturer:
Microchip Technology
Description:
DIODE GEN PURP 300V 20A DO203AA
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
300 V
Current - Average Rectified (Io):
20A
Voltage - Forward (Vf) (Max) @ If:
1.25 V @ 20 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
50 ns
Current - Reverse Leakage @ Vr:
-
Capacitance @ Vr, F:
-
Mounting Type:
Stud Mount
Package / Case:
DO-203AA, DO-4, Stud
Supplier Device Package:
DO-203AA (DO-4)
Operating Temperature - Junction:
-
Stock:
0
Part Number:
UES703
Manufacturer:
Microchip Technology
Description:
DIODE GEN PURP 50V 25A DO203AA
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
50 V
Current - Average Rectified (Io):
25A
Voltage - Forward (Vf) (Max) @ If:
950 mV @ 25 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
35 ns
Current - Reverse Leakage @ Vr:
20 µA @ 150 V
Capacitance @ Vr, F:
-
Mounting Type:
Stud Mount
Package / Case:
DO-203AA, DO-4, Stud
Supplier Device Package:
DO-203AA (DO-4)
Operating Temperature - Junction:
-55°C ~ 175°C
Stock:
0
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