Part Number:
1N6081US-TR
Manufacturer:
Microchip Technology
Description:
DIODE GP 150V 2A G SQ-MELF
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
150 V
Current - Average Rectified (Io):
2A
Voltage - Forward (Vf) (Max) @ If:
1.5 V @ 37.7 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
30 ns
Current - Reverse Leakage @ Vr:
10 µA @ 150 V
Capacitance @ Vr, F:
-
Mounting Type:
Surface Mount
Package / Case:
SQ-MELF, A
Supplier Device Package:
G, SQ-MELF
Operating Temperature - Junction:
-65°C ~ 155°C
Stock:
0
Part Number:
SR220H
Manufacturer:
Taiwan Semiconductor Corporation
Description:
DIODE SCHOTTKY 200V 2A DO204AC
Series:
-
Diode Type:
Schottky
Voltage - DC Reverse (Vr) (Max):
200 V
Current - Average Rectified (Io):
2A
Voltage - Forward (Vf) (Max) @ If:
950 mV @ 2 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
100 µA @ 200 V
Capacitance @ Vr, F:
-
Mounting Type:
Through Hole
Package / Case:
DO-204AC, DO-15, Axial
Supplier Device Package:
DO-204AC (DO-15)
Operating Temperature - Junction:
-55°C ~ 150°C
Stock:
0
Part Number:
DNA30E2200PZ-TUB
Manufacturer:
IXYS
Description:
DIODE GEN PURP 2.2KV 30A TO263HV
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
2200 V
Current - Average Rectified (Io):
30A
Voltage - Forward (Vf) (Max) @ If:
1.26 V @ 30 A
Speed:
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
40 µA @ 2200 V
Capacitance @ Vr, F:
7pF @ 700V, 1MHz
Mounting Type:
Surface Mount
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package:
TO-263HV
Operating Temperature - Junction:
-55°C ~ 175°C
Stock:
0
Part Number:
TPAU3G
Manufacturer:
Taiwan Semiconductor Corporation
Description:
65NS, 3A, 400V, HIGH EFFICIENT R
Series:
-
Diode Type:
Avalanche
Voltage - DC Reverse (Vr) (Max):
400 V
Current - Average Rectified (Io):
3A
Voltage - Forward (Vf) (Max) @ If:
1.88 V @ 3 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
75 ns
Current - Reverse Leakage @ Vr:
10 µA @ 400 V
Capacitance @ Vr, F:
60pF @ 4V, 1MHz
Mounting Type:
Surface Mount
Package / Case:
TO-277, 3-PowerDFN
Supplier Device Package:
TO-277A (SMPC)
Operating Temperature - Junction:
-55°C ~ 175°C
Stock:
0
Part Number:
TPAU3J
Manufacturer:
Taiwan Semiconductor Corporation
Description:
65NS, 3A, 600V, HIGH EFFICIENT R
Series:
-
Diode Type:
Avalanche
Voltage - DC Reverse (Vr) (Max):
600 V
Current - Average Rectified (Io):
3A
Voltage - Forward (Vf) (Max) @ If:
1.88 V @ 3 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
75 ns
Current - Reverse Leakage @ Vr:
10 µA @ 600 V
Capacitance @ Vr, F:
60pF @ 4V, 1MHz
Mounting Type:
Surface Mount
Package / Case:
TO-277, 3-PowerDFN
Supplier Device Package:
TO-277A (SMPC)
Operating Temperature - Junction:
-55°C ~ 175°C
Stock:
0
Part Number:
TPAU3D
Manufacturer:
Taiwan Semiconductor Corporation
Description:
65NS, 3A, 200V, HIGH EFFICIENT R
Series:
-
Diode Type:
Avalanche
Voltage - DC Reverse (Vr) (Max):
200 V
Current - Average Rectified (Io):
3A
Voltage - Forward (Vf) (Max) @ If:
1.88 V @ 3 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
65 ns
Current - Reverse Leakage @ Vr:
400 nA @ 200 V
Capacitance @ Vr, F:
60pF @ 4V, 1MHz
Mounting Type:
Surface Mount
Package / Case:
TO-277, 3-PowerDFN
Supplier Device Package:
TO-277A (SMPC)
Operating Temperature - Junction:
-55°C ~ 175°C
Stock:
0
Part Number:
SR215H
Manufacturer:
Taiwan Semiconductor Corporation
Description:
DIODE SCHOTTKY 150V 2A DO204AC
Series:
-
Diode Type:
Schottky
Voltage - DC Reverse (Vr) (Max):
150 V
Current - Average Rectified (Io):
2A
Voltage - Forward (Vf) (Max) @ If:
950 mV @ 2 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
100 µA @ 150 V
Capacitance @ Vr, F:
-
Mounting Type:
Through Hole
Package / Case:
DO-204AC, DO-15, Axial
Supplier Device Package:
DO-204AC (DO-15)
Operating Temperature - Junction:
-55°C ~ 150°C
Stock:
0
Part Number:
CGRAT105L-HF
Manufacturer:
Comchip Technology
Description:
DIODE GEN PURP 1KV 1A 2010
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
1000 V
Current - Average Rectified (Io):
1A
Voltage - Forward (Vf) (Max) @ If:
930 mV @ 1 A
Speed:
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
5 µA @ 1000 V
Capacitance @ Vr, F:
8.2pF @ 4V, 1MHz
Mounting Type:
Surface Mount
Package / Case:
2-SMD, No Lead
Supplier Device Package:
2010/DO-214AC
Operating Temperature - Junction:
-65°C ~ 175°C
Stock:
0
Part Number:
JANS1N6864
Manufacturer:
Microchip Technology
Description:
DIODE SCHOTTKY 80V 3A B AXIAL
Series:
-
Diode Type:
Schottky
Voltage - DC Reverse (Vr) (Max):
80 V
Current - Average Rectified (Io):
3A
Voltage - Forward (Vf) (Max) @ If:
700 mV @ 3 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
18 mA @ 80 V
Capacitance @ Vr, F:
-
Mounting Type:
Through Hole
Package / Case:
B, Axial
Supplier Device Package:
B, Axial
Operating Temperature - Junction:
-65°C ~ 125°C
Stock:
0
Part Number:
GF3545TS-S1
Manufacturer:
SMC Diode Solutions
Description:
TRENCH SCHOTTKY MODULE 45V 35A G
Series:
-
Diode Type:
-
Voltage - DC Reverse (Vr) (Max):
-
Current - Average Rectified (Io):
-
Voltage - Forward (Vf) (Max) @ If:
-
Speed:
-
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
-
Capacitance @ Vr, F:
-
Mounting Type:
-
Package / Case:
-
Supplier Device Package:
-
Operating Temperature - Junction:
-
Stock:
180
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