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Rectifiers - Arrays (15886)

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Records 15886
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Part Number:

MDMA85P1800TG

Manufacturer:

Littelfuse

Description:

DIODE MODULE GP 1800V 85A

  • Series:

    -

  • Diode Configuration:

    -

  • Diode Type:

    -

  • Voltage - DC Reverse (Vr) (Max):

    -

  • Current - Average Rectified (Io) (per Diode):

    -

  • Voltage - Forward (Vf) (Max) @ If:

    -

  • Speed:

    -

  • Reverse Recovery Time (trr):

    -

  • Current - Reverse Leakage @ Vr:

    -

  • Operating Temperature - Junction:

    -

  • Mounting Type:

    -

  • Package / Case:

    -

  • Supplier Device Package:

    -

Stock:

0

1

Part Number:

BAS40-04T-7-F-2477

Manufacturer:

Diodes Incorporated

Description:

DIODE ARR SCHOT 40V 200MA SOT523

  • Series:

    -

  • Diode Configuration:

    1 Pair Series Connection

  • Diode Type:

    Schottky

  • Voltage - DC Reverse (Vr) (Max):

    40 V

  • Current - Average Rectified (Io) (per Diode):

    200mA

  • Voltage - Forward (Vf) (Max) @ If:

    1 V @ 40 mA

  • Speed:

    Small Signal =< 200mA (Io), Any Speed

  • Reverse Recovery Time (trr):

    5 ns

  • Current - Reverse Leakage @ Vr:

    200 nA @ 30 V

  • Operating Temperature - Junction:

    -55°C ~ 125°C

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOT-523

  • Supplier Device Package:

    SOT-523

Stock:

0

1

Part Number:

RFN10NS8DTL

Manufacturer:

Rohm Semiconductor

Description:

DIODE ARRAY GP 800V 10A LPDS

  • Series:

    -

  • Diode Configuration:

    1 Pair Common Cathode

  • Diode Type:

    Standard

  • Voltage - DC Reverse (Vr) (Max):

    800 V

  • Current - Average Rectified (Io) (per Diode):

    10A

  • Voltage - Forward (Vf) (Max) @ If:

    2.1 V @ 5 A

  • Speed:

    Fast Recovery =< 500ns, > 200mA (Io)

  • Reverse Recovery Time (trr):

    40 ns

  • Current - Reverse Leakage @ Vr:

    10 µA @ 800 V

  • Operating Temperature - Junction:

    150°C

  • Mounting Type:

    Surface Mount

  • Package / Case:

    TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

  • Supplier Device Package:

    LPDS

Stock:

2985

1

Part Number:

MBRF10H200CT

Manufacturer:

Taiwan Semiconductor Corporation

Description:

DIODE ARR SCHOTT 200V ITO220AB

  • Series:

    -

  • Diode Configuration:

    1 Pair Common Cathode

  • Diode Type:

    Schottky

  • Voltage - DC Reverse (Vr) (Max):

    200 V

  • Current - Average Rectified (Io) (per Diode):

    10A

  • Voltage - Forward (Vf) (Max) @ If:

    970 mV @ 10 A

  • Speed:

    Fast Recovery =< 500ns, > 200mA (Io)

  • Reverse Recovery Time (trr):

    -

  • Current - Reverse Leakage @ Vr:

    5 µA @ 200 V

  • Operating Temperature - Junction:

    -55°C ~ 175°C

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-220-3 Full Pack, Isolated Tab

  • Supplier Device Package:

    ITO-220AB

Stock:

0

1

Part Number:

MBR40200PTH

Manufacturer:

Taiwan Semiconductor Corporation

Description:

DIODE ARR SCHOT 200V 40A TO247AD

  • Series:

    -

  • Diode Configuration:

    1 Pair Common Cathode

  • Diode Type:

    Schottky

  • Voltage - DC Reverse (Vr) (Max):

    200 V

  • Current - Average Rectified (Io) (per Diode):

    40A

  • Voltage - Forward (Vf) (Max) @ If:

    1.01 V @ 40 A

  • Speed:

    Fast Recovery =< 500ns, > 200mA (Io)

  • Reverse Recovery Time (trr):

    -

  • Current - Reverse Leakage @ Vr:

    100 µA @ 200 V

  • Operating Temperature - Junction:

    -55°C ~ 150°C

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-247-3

  • Supplier Device Package:

    TO-247AD (TO-3P)

Stock:

0

1

Part Number:

1SS422-TE85L-F

Manufacturer:

Toshiba Semiconductor and Storage

Description:

DIODE ARR SCHOTT 30V 100MA SSM

  • Series:

    -

  • Diode Configuration:

    1 Pair Series Connection

  • Diode Type:

    Schottky

  • Voltage - DC Reverse (Vr) (Max):

    30 V

  • Current - Average Rectified (Io) (per Diode):

    100mA

  • Voltage - Forward (Vf) (Max) @ If:

    500 mV @ 100 mA

  • Speed:

    Small Signal =< 200mA (Io), Any Speed

  • Reverse Recovery Time (trr):

    -

  • Current - Reverse Leakage @ Vr:

    50 µA @ 30 V

  • Operating Temperature - Junction:

    125°C (Max)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SC-75, SOT-416

  • Supplier Device Package:

    SSM

Stock:

205713

1

Part Number:

SDT10A60VCTFP

Manufacturer:

Diodes Incorporated

Description:

DIODE ARR SCHOTT 60V 5A ITO220AB

  • Series:

    -

  • Diode Configuration:

    1 Pair Common Cathode

  • Diode Type:

    Schottky

  • Voltage - DC Reverse (Vr) (Max):

    60 V

  • Current - Average Rectified (Io) (per Diode):

    5A

  • Voltage - Forward (Vf) (Max) @ If:

    540 mV @ 5 A

  • Speed:

    Fast Recovery =< 500ns, > 200mA (Io)

  • Reverse Recovery Time (trr):

    -

  • Current - Reverse Leakage @ Vr:

    100 µA @ 60 V

  • Operating Temperature - Junction:

    -55°C ~ 150°C

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-220-3 Full Pack, Isolated Tab

  • Supplier Device Package:

    ITO-220AB

Stock:

0

1

Part Number:

TRS24N65FB-S1Q

Manufacturer:

Toshiba Semiconductor and Storage

Description:

DIODE ARR SIC SCHOT 650V TO247

  • Series:

    -

  • Diode Configuration:

    1 Pair Common Cathode

  • Diode Type:

    SiC (Silicon Carbide) Schottky

  • Voltage - DC Reverse (Vr) (Max):

    650 V

  • Current - Average Rectified (Io) (per Diode):

    12A (DC)

  • Voltage - Forward (Vf) (Max) @ If:

    1.6 V @ 12 A

  • Speed:

    No Recovery Time > 500mA (Io)

  • Reverse Recovery Time (trr):

    0 ns

  • Current - Reverse Leakage @ Vr:

    60 µA @ 650 V

  • Operating Temperature - Junction:

    175°C

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-247-3

  • Supplier Device Package:

    TO-247

Stock:

105

1

Part Number:

NXPLQSC30650WQ

Manufacturer:

WeEn Semiconductors

Description:

DIODE ARR SIC 650V 30A TO247-3

  • Series:

    -

  • Diode Configuration:

    1 Pair Common Cathode

  • Diode Type:

    SiC (Silicon Carbide) Schottky

  • Voltage - DC Reverse (Vr) (Max):

    650 V

  • Current - Average Rectified (Io) (per Diode):

    30A

  • Voltage - Forward (Vf) (Max) @ If:

    1.95 V @ 15 A

  • Speed:

    No Recovery Time > 500mA (Io)

  • Reverse Recovery Time (trr):

    0 ns

  • Current - Reverse Leakage @ Vr:

    250 µA @ 650 V

  • Operating Temperature - Junction:

    175°C (Max)

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-247-3

  • Supplier Device Package:

    TO-247-3

Stock:

0

1

Part Number:

GD2X10MPS12D

Manufacturer:

GeneSiC Semiconductor

Description:

DIODE ARR SIC 1200V 25A TO247-3

  • Series:

    MPS™

  • Diode Configuration:

    1 Pair Common Cathode

  • Diode Type:

    SiC (Silicon Carbide) Schottky

  • Voltage - DC Reverse (Vr) (Max):

    1200 V

  • Current - Average Rectified (Io) (per Diode):

    25A

  • Voltage - Forward (Vf) (Max) @ If:

    1.8 V @ 10 A

  • Speed:

    No Recovery Time > 500mA (Io)

  • Reverse Recovery Time (trr):

    0 ns

  • Current - Reverse Leakage @ Vr:

    5 µA @ 1.2 kV

  • Operating Temperature - Junction:

    -55°C ~ 175°C

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-247-3

  • Supplier Device Package:

    TO-247-3

Stock:

0

1

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