Heisener Electronics
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TSM2312CX-RFG_1

20V|4.9A (Tc)|750mW (Ta)
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MOSFET N-CHANNEL 20V 4.9A SOT23

Specifications

Brand
Taiwan Semiconductor Corporation
Package
SOT-23
Packaging
—
Weight
—

Total Inventory

49,846pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how TSM2312CX-RFG_1 from Taiwan Semiconductor Corporation fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerTaiwan Semiconductor Corporation
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C4.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs33mOhm @ 4.9A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs11.2nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds500pF @ 10V
FET Feature-
Power Dissipation (Max)750mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23
Package / CaseTO-236-3, SC-59, SOT-23-3

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