Heisener Electronics
BOM

TPH3205WSB

650V|36A (Tc)|125W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

GANFET N-CH 650V 36A TO247

Specifications

Brand
Transphorm
Package
TO-247-3
Packaging
—
Weight
—

Total Inventory

388pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how TPH3205WSB from Transphorm fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerTransphorm
Series-
FET TypeN-Channel
TechnologyGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs60mOhm @ 22A, 8V
Vgs(th) (Max) @ Id2.6V @ 700µA
Gate Charge (Qg) (Max) @ Vgs42nC @ 8V
Vgs (Max)±18V
Input Capacitance (Ciss) (Max) @ Vds2200pF @ 400V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-3
Package / CaseTO-247-3

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