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600V|70A (Tc)|470W
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GANFET 2N-CH 600V 70A MODULE
Specifications
- Brand
- Transphorm
- Package
- Module
- Packaging
- —
- Weight
- —
Total Inventory
480pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how TPD3215M from Transphorm fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Transphorm | |
| Series | - | |
| FET Type | 2 N-Channel (Half Bridge) | |
| FET Feature | GaNFET (Gallium Nitride) | |
| Drain to Source Voltage (Vdss) | 600V | |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) | |
| Rds On (Max) @ Id, Vgs | 34mOhm @ 30A, 8V | |
| Vgs(th) (Max) @ Id | - | |
| Gate Charge (Qg) (Max) @ Vgs | 28nC @ 8V | |
| Input Capacitance (Ciss) (Max) @ Vds | 2260pF @ 100V | |
| Power - Max | 470W | |
| Operating Temperature | -40°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Package / Case | Module | |
| Supplier Device Package | Module |
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