Heisener Electronics
BOM

TP65H150G4LSG-TR

650 V|13A (Tc)|52W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

650 V 13 A GAN FET

Specifications

Brand
Transphorm
Package
3-PQFN (8x8)
Packaging
—
Weight
—

Total Inventory

0pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how TP65H150G4LSG-TR from Transphorm fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
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Technical Specifications

ManufacturerTransphorm
Series-
FET TypeN-Channel
TechnologyGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs180mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id4.8V @ 500µA
Gate Charge (Qg) (Max) @ Vgs8 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds598 pF @ 400 V
FET Feature-
Power Dissipation (Max)52W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package3-PQFN (8x8)
Package / Case3-PowerTDFN

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