Heisener Electronics
BOM

TP65H070LSG-TR

650 V|25A (Tc)|96W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

GANFET N-CH 650V 25A PQFN88

Specifications

Brand
Transphorm
Package
3-PQFN (8x8)
Packaging
—
Weight
—

Total Inventory

37,089pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how TP65H070LSG-TR from Transphorm fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerTransphorm
SeriesTP65H070L
FET TypeN-Channel
TechnologyGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs85mOhm @ 16A, 10V
Vgs(th) (Max) @ Id4.8V @ 700µA
Gate Charge (Qg) (Max) @ Vgs9.3 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds600 pF @ 400 V
FET Feature-
Power Dissipation (Max)96W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package3-PQFN (8x8)
Package / Case3-PowerDFN

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