Contact
Send MessageTP65H070G4LSG-TR
650 V|29A (Tc)|96W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount
GANFET N-CH 650V 29A QFN8X8
Specifications
- Brand
- Transphorm
- Package
- 3-PQFN (8x8)
- Packaging
- —
- Weight
- —
Total Inventory
8,118pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how TP65H070G4LSG-TR from Transphorm fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Transphorm | |
| Series | SuperGaN® | |
| FET Type | N-Channel | |
| Technology | GaNFET (Gallium Nitride) | |
| Drain to Source Voltage (Vdss) | 650 V | |
| Current - Continuous Drain (Id) @ 25°C | 29A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 16A, 10V | |
| Vgs(th) (Max) @ Id | 4.8V @ 700µA | |
| Gate Charge (Qg) (Max) @ Vgs | 8.4 nC @ 10 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 600 pF @ 400 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 96W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 3-PQFN (8x8) | |
| Package / Case | 3-PowerTDFN |
Recommended Products
RES MF 3W 1% AXIAL
RES SMD 243K OHM 1% 1W 2512
MEMS OSC XO 166.6000MHZ LVCMOS
MEMS OSC PRG SSXO LVCMOS DS 2.8V
CAP ALUM 22UF 20% 6.3V RADIAL
PRESSURE TRANSDUCER
TRANSISTOR N-CH
TERM BLOCK PLUG 9POS STR 5.08MM
CONN PLUG 11POS INLINE W/PINS
CONN BACKSHELL ADPT SZ 25J M37
