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TP65H050WSQA

650 V|36A (Tc)|150W (Tc)

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GANFET N-CH 650V 36A TO247-3

Specifications

Brand: Transphorm
Package: TO-247-3
Packaging: —
Weight: —

Total Inventory

129pcs

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Purchase Quantity

MOQ: 1 pcs

Certifications & Authorizations

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Manufacturer	Transphorm
Series	-
FET Type	N-Channel
Technology	GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	60mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	4.8V @ 700µA
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1000 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	150W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247-3
Package / Case	TO-247-3

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TP65H050WSQA

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