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650 V|34A (Tc)|119W (Tc)
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650 V 34 A GAN FET
Specifications
- Brand
- Transphorm
- Package
- TO-263
- Packaging
- —
- Weight
- —
Total Inventory
687pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how TP65H050G4BS from Transphorm fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Transphorm | |
| Series | SuperGaN® | |
| FET Type | N-Channel | |
| Technology | GaNFET (Gallium Nitride) | |
| Drain to Source Voltage (Vdss) | 650 V | |
| Current - Continuous Drain (Id) @ 25°C | 34A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 22A, 10V | |
| Vgs(th) (Max) @ Id | 4.8V @ 700µA | |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 400 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 119W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | TO-263 | |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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