Contact
Send MessageTP65H035G4WSQA
650 V|47.2A (Tc)|187W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount
650 V 46.5 GAN FET
Specifications
- Brand
- Transphorm
- Package
- TO-247-3
- Packaging
- —
- Weight
- —
Total Inventory
843pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how TP65H035G4WSQA from Transphorm fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Transphorm | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | GaNFET (Gallium Nitride) | |
| Drain to Source Voltage (Vdss) | 650 V | |
| Current - Continuous Drain (Id) @ 25°C | 47.2A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 41mOhm @ 30A, 10V | |
| Vgs(th) (Max) @ Id | 4.8V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 400 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 187W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-247-3 | |
| Package / Case | TO-247-3 |
Recommended Products
RES SMD 5.76K OHM 0.5% 1/4W 1206
MEMS OSC XO 38.4000MHZ H/LV-CMOS
CAP CER 12PF 6KV C0G/NP0 2225
CAP CER 10PF 63V C0G/NP0 1210
SENSOR PRES 15PSI ABSO 5V DIP
DC DC CONVERTER 10V 200W
1MM MICRO TERMINAL STRIPS
2.5 S.D.L POST HDR ASY 8P STD
CONN RCPT FMALE 9POS GOLD SLDR
CONN EDGE DUAL FMALE 26POS 0.100
