Contact
Send MessageSPI10N10L
100V|10.3A (Tc)|50W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount
MOSFET N-CH 100V 10.3A I2PAK
Specifications
- Brand
- Infineon Technologies
- Package
- PG-TO262-3-1
- Packaging
- —
- Weight
- —
Total Inventory
366pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how SPI10N10L from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Infineon Technologies | |
| Series | SIPMOS® | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 100V | |
| Current - Continuous Drain (Id) @ 25°C | 10.3A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 154mOhm @ 8.1A, 10V | |
| Vgs(th) (Max) @ Id | 2V @ 21µA | |
| Gate Charge (Qg) (Max) @ Vgs | 22nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 444pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 50W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | PG-TO262-3-1 | |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
Recommended Products
RES 392 OHM 1/8W 1% AXIAL
WSL-2010 .4 .1% EA E3
MEMS OSC XO 62.5000MHZ CMOS SMD
CAP CER 10PF 50V R2H AXIAL
CAP CER 2700PF 200V C0G/NP0 RAD
DC DC CONVERTER -12V 12W
DIODE GEN PURP 900V 35A DO5
TVS DIODE
CONN EDGE DUAL FMALE 100POS .100
HAR-BUS HM POWER 4P MALE MMLM PL
Datasheet & Documents
spp10n10l.pdf
PDF Document · 8 pages
