Heisener Electronics
BOM

1N3767

900V|35A
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

DIODE GEN PURP 900V 35A DO5

Specifications

Brand
GeneSiC Semiconductor
Package
DO-203AB, DO-5, Stud
Packaging
—
Weight
—

Total Inventory

248pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how 1N3767 from GeneSiC Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerGeneSiC Semiconductor
Series-
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)900V
Current - Average Rectified (Io)35A
Voltage - Forward (Vf) (Max) @ If1.2V @ 35A
SpeedStandard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)-
Current - Reverse Leakage @ Vr10µA @ 50V
Capacitance @ Vr, F-
Mounting TypeChassis, Stud Mount
Package / CaseDO-203AB, DO-5, Stud
Supplier Device PackageDO-5
Operating Temperature - Junction-65°C ~ 190°C

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Datasheet & Documents

1n3767r.pdf

PDF Document · 3 pages

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