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650V|35A (Tc)|357W (Tc)
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MOSFET N-CH 650V 35A TO220
Specifications
- Brand
- Fairchild/ON Semiconductor
- Package
- TO-220-3
- Packaging
- —
- Weight
- —
Total Inventory
15,972pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how FCP110N65F from Fairchild/ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
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- Dedicated application engineering support
Technical Specifications
| Manufacturer | Fairchild/ON Semiconductor | |
| Series | FRFET?, SuperFET? II | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 650V | |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 110 mOhm @ 17.5A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 3.5mA | |
| Gate Charge (Qg) (Max) @ Vgs | 145nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 4895pF @ 100V | |
| FET Feature | - | |
| Power Dissipation (Max) | 357W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-220-3 | |
| Package / Case | TO-220-3 |
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Datasheet & Documents
fcp110n65f.pdf
PDF Document · 10 pages
