页 131 - Vishay Siliconix 产品 | 深圳黑森尔电子
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Vishay Siliconix 产品

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hot SI5406DC-T1-E3
Vishay Siliconix

MOSFET N-CH 12V 6.9A 1206-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 600mV @ 1.2mA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta)
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 6.9A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 1206-8 ChipFET?
  • Package / Case: 8-SMD, Flat Lead
封装: 8-SMD, Flat Lead
库存551,808
hot IRFZ48S
Vishay Siliconix

MOSFET N-CH 60V 50A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 190W (Tc)
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 43A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存91,572
IRFBC40STRR
Vishay Siliconix

MOSFET N-CH 600V 6.2A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 130W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3.7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存2,816
hot IRLI640G
Vishay Siliconix

MOSFET N-CH 200V 9.9A TO220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 180 mOhm @ 5.9A, 5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
封装: TO-220-3 Full Pack, Isolated Tab
库存17,880
hot IRFBF20S
Vishay Siliconix

MOSFET N-CH 900V 1.7A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 54W (Tc)
  • Rds On (Max) @ Id, Vgs: 8 Ohm @ 1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存6,688
hot IRFPG50
Vishay Siliconix

MOSFET N-CH 1000V 6.1A TO-247AC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 190W (Tc)
  • Rds On (Max) @ Id, Vgs: 2 Ohm @ 3.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
封装: TO-247-3
库存13,128
hot IRFP264
Vishay Siliconix

MOSFET N-CH 250V 38A TO-247AC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 280W (Tc)
  • Rds On (Max) @ Id, Vgs: 75 mOhm @ 23A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
封装: TO-247-3
库存3,744
SIHW73N60E-GE3
Vishay Siliconix

MOSFET N-CH 600V 73A TO-247AD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 362nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7700pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 520W (Tc)
  • Rds On (Max) @ Id, Vgs: 39 mOhm @ 36A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD
  • Package / Case: TO-247-3
封装: TO-247-3
库存7,232
SUM110N04-04-E3
Vishay Siliconix

MOSFET N-CH 40V 110A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.75W (Ta), 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2Pak)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存6,240
SQM100N10-10_GE3
Vishay Siliconix

MOSFET N-CH 100V 100A TO-263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8050pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 375W (Tc)
  • Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2Pak)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存5,392
hot SI4634DY-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 24.5A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 24.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3150pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封装: 8-SOIC (0.154", 3.90mm Width)
库存1,100,388
hot SI3460DV-T1-GE3
Vishay Siliconix

MOSFET N-CH 20V 5.1A 6TSOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 450mV @ 1mA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 27 mOhm @ 5.1A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
封装: SOT-23-6 Thin, TSOT-23-6
库存522,240
SIA453EDJ-T1-GE3
Vishay Siliconix

MOSFET P-CH 30V 24A PPAK SC-70-6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
  • Rds On (Max) @ Id, Vgs: 18.5 mOhm @ 5A, 10V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SC-70-6 Single
  • Package / Case: PowerPAK? SC-70-6
封装: PowerPAK? SC-70-6
库存3,248
hot SI1013R-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 350MA SC-75A

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±6V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 350mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-75A
  • Package / Case: SC-75A
封装: SC-75A
库存666,288
hot SIHP15N60E-GE3
Vishay Siliconix

MOSFET N-CH 600V 15A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 180W (Tc)
  • Rds On (Max) @ Id, Vgs: 280 mOhm @ 8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封装: TO-220-3
库存16,872
SQJA06EP-T1_GE3
Vishay Siliconix

MOSFET N-CH 60V 57A SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 55W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.7 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
封装: PowerPAK? SO-8
库存22,326
hot SI4776DY-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 11.9A 8SO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 11.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 521pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 4.1W (Tc)
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TA)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封装: 8-SOIC (0.154", 3.90mm Width)
库存594,936
SIS902DN-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 75V 4A PPAK 1212-8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 186 mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 38V
  • Power - Max: 15.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? 1212-8 Dual
  • Supplier Device Package: PowerPAK? 1212-8 Dual
封装: PowerPAK? 1212-8 Dual
库存5,600
hot SI1972DH-T1-E3
Vishay Siliconix

MOSFET 2N-CH 30V 1.3A SC70-6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.3A
  • Rds On (Max) @ Id, Vgs: 225 mOhm @ 1.3A, 10V
  • Vgs(th) (Max) @ Id: 2.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 15V
  • Power - Max: 1.25W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6 (SOT-363)
封装: 6-TSSOP, SC-88, SOT-363
库存1,570,536
hot SI9183DT-28-T1-E3
Vishay Siliconix

IC REG LIN 2.8V 150MA TSOT23-5

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 6V
  • Voltage - Output (Min/Fixed): 2.8V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.22V @ 150mA
  • Current - Output: 150mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 900µA
  • PSRR: 60dB ~ 30dB (1kHz ~ 100kHz)
  • Control Features: Enable
  • Protection Features: Over Temperature, Short Circuit
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-5 Thin, TSOT-23-5
  • Supplier Device Package: TSOT-23-5
封装: SOT-23-5 Thin, TSOT-23-5
库存536,904
SJM190BEA01
Vishay Siliconix

IC ANALOG SWITCH

  • Switch Circuit: -
  • Multiplexer/Demultiplexer Circuit: -
  • Number of Circuits: -
  • On-State Resistance (Max): -
  • Channel-to-Channel Matching (ΔRon): -
  • Voltage - Supply, Single (V+): -
  • Voltage - Supply, Dual (V±): -
  • Switch Time (Ton, Toff) (Max): -
  • -3db Bandwidth: -
  • Charge Injection: -
  • Channel Capacitance (CS(off), CD(off)): -
  • Current - Leakage (IS(off)) (Max): -
  • Crosstalk: -
  • Operating Temperature: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存6,528
DG413LDJ-E3
Vishay Siliconix

IC SWITCH QUAD SPST LV 16-DIP

  • Switch Circuit: SPST - NO/NC
  • Multiplexer/Demultiplexer Circuit: 1:1
  • Number of Circuits: 4
  • On-State Resistance (Max): 17 Ohm
  • Channel-to-Channel Matching (ΔRon): -
  • Voltage - Supply, Single (V+): 2.7 V ~ 12 V
  • Voltage - Supply, Dual (V±): ±3 V ~ 6 V
  • Switch Time (Ton, Toff) (Max): 19ns, 12ns
  • -3db Bandwidth: 280MHz
  • Charge Injection: 5pC
  • Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
  • Current - Leakage (IS(off)) (Max): 250pA
  • Crosstalk: -95dB @ 1MHz
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 16-DIP (0.300", 7.62mm)
  • Supplier Device Package: 16-DIP
封装: 16-DIP (0.300", 7.62mm)
库存7,616
DG541DY-T1-E3
Vishay Siliconix

IC SWITCH QUAD SPST 16SOIC

  • Applications: Video
  • Multiplexer/Demultiplexer Circuit: 1:1
  • Switch Circuit: SPST
  • Number of Channels: 4
  • On-State Resistance (Max): 60 Ohm
  • Voltage - Supply, Single (V+): 3 V ~ 15 V
  • Voltage - Supply, Dual (V±): ±3 V ~ 15 V
  • -3db Bandwidth: 500MHz
  • Features: RGB, T-Switch Configuration
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
封装: 16-SOIC (0.154", 3.90mm Width)
库存5,424
DG2012EDL-T1-GE3
Vishay Siliconix

IC ANALOG SWITCH SPDT SC70-6

  • Switch Circuit: SPDT
  • Multiplexer/Demultiplexer Circuit: 2:1
  • Number of Circuits: 1
  • On-State Resistance (Max): 1.6 Ohm
  • Channel-to-Channel Matching (ΔRon): 300 mOhm
  • Voltage - Supply, Single (V+): 1.65 V ~ 5.5 V
  • Voltage - Supply, Dual (V±): -
  • Switch Time (Ton, Toff) (Max): 32ns, 28ns
  • -3db Bandwidth: 160MHz
  • Charge Injection: 8pC
  • Channel Capacitance (CS(off), CD(off)): 16pF
  • Current - Leakage (IS(off)) (Max): 5nA
  • Crosstalk: -63dB @ 1MHz
  • Operating Temperature: -40°C ~ 85°C
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6
封装: 6-TSSOP, SC-88, SOT-363
库存4,000
SI2351DS-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 2.8A SOT23-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 115mOhm @ 2.4A, 4.5V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封装: -
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SIHB105N60EF-GE3
Vishay Siliconix

MOSFET N-CH 600V 29A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1804 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 208W (Tc)
  • Rds On (Max) @ Id, Vgs: 102mOhm @ 13A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
封装: -
库存17,133
SUD35N10-26P-BE3
Vishay Siliconix

MOSFET N-CH 100V 12A/35A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
  • Vgs(th) (Max) @ Id: 4.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 12 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 8.3W (Ta), 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 26mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封装: -
库存5,505
SI3457CDV-T1-BE3
Vishay Siliconix

P-CHANNEL 30-V (D-S) MOSFET

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 5.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 3W (Tc)
  • Rds On (Max) @ Id, Vgs: 74mOhm @ 4.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
封装: -
库存17,313
SIHP22N60EF-GE3
Vishay Siliconix

MOSFET N-CH 600V 19A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 179W (Tc)
  • Rds On (Max) @ Id, Vgs: 182mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220 Full Pack
  • Package / Case: TO-220-3 Full Pack
封装: -
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SIS590DN-T1-GE3
Vishay Siliconix

MOSFET N/P-CH 100V 2.7A PPAK1212

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), 4A (Tc), 2.3A (Ta), 4A (Tc)
  • Rds On (Max) @ Id, Vgs: 167mOhm @ 1.5A, 10V, 251mOhm @ 2.3A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 265pF 2 50V, 325pF @ 50V
  • Power - Max: 2.5W (Ta), 17.9W (Tc), 2.6W (Ta), 23.1W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® 1212-8 Dual
  • Supplier Device Package: PowerPAK® 1212-8 Dual
封装: -
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