Micron Technology Inc. 产品

MT29F256G08CEEABH6-12:A TR

Micron Technology Inc.

IC FLASH 256GBIT 83MHZ 152VBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 256Gb (32G x 8)
• Memory Interface: Parallel
• Clock Frequency: 83MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.5 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

MT29RZ4B2DZZHGSK-18 W.80E TR

Micron Technology Inc.

IC FLASH 6G DDR2

• Memory Type: Non-Volatile
• Memory Format: FLASH, RAM
• Technology: FLASH - NAND, DRAM - LPDDR2
• Memory Size: 4Gb (512M x 8)(NAND), 2G (64M x 32)(LPDDR2)
• Memory Interface: Parallel
• Clock Frequency: 533MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.8V
• Operating Temperature: -25°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

MT49H16M18SJ-25:B

Micron Technology Inc.

IC RLDRAM 288MBIT 400MHZ 144UBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: DRAM
• Memory Size: 288Mb (16M x 18)
• Memory Interface: Parallel
• Clock Frequency: 400MHz
• Write Cycle Time - Word, Page: -
• Access Time: 20ns
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 95°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 144-TBGA
• Supplier Device Package: 144-FBGA (18.5x11)

封装: 144-TBGA

MT29F64G08AKCBBH2-12IT:B

Micron Technology Inc.

IC FLASH 64GBIT 83MHZ 100TBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 64Gb (8G x 8)
• Memory Interface: Parallel
• Clock Frequency: 83MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-TBGA
• Supplier Device Package: 100-TBGA (12x18)

封装: 100-TBGA

M29W256GL70ZA6F TR

Micron Technology Inc.

IC FLASH 256MBIT 70NS 64TBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 256Mb (32M x 8, 16M x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 70ns
• Access Time: 70ns
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-TBGA
• Supplier Device Package: 64-TBGA (10x13)

封装: 64-TBGA

M29W256GSL70ZS6E

Micron Technology Inc.

IC FLASH 256MBIT 70NS 64FBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 256Mb (32M x 8, 16M x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 70ns
• Access Time: 70ns
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LBGA
• Supplier Device Package: 64-FBGA (11x13)

封装: 64-LBGA

RD48F4400P0VBQE4

Micron Technology Inc.

IC FLASH 512MBIT 100NS 88SCSP

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 512Mb (32M x 16)
• Memory Interface: Parallel
• Clock Frequency: 52MHz
• Write Cycle Time - Word, Page: 100ns
• Access Time: 100ns
• Voltage - Supply: 1.7 V ~ 2 V
• Operating Temperature: -40°C ~ 85°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 88-TFBGA, CSPBGA
• Supplier Device Package: 88-SCSP (11x8)

封装: 88-TFBGA, CSPBGA

MT48H4M16LFB4-10

Micron Technology Inc.

IC SDRAM 64MBIT 100MHZ 54VFBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPSDR
• Memory Size: 64Mb (4M x 16)
• Memory Interface: Parallel
• Clock Frequency: 104MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 7ns
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -25°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 54-VFBGA
• Supplier Device Package: 54-VFBGA (8x8)

封装: 54-VFBGA

MT46V128M4BN-6:D

Micron Technology Inc.

IC SDRAM 512MBIT 167MHZ 60FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR
• Memory Size: 512Mb (128M x 4)
• Memory Interface: Parallel
• Clock Frequency: 167MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 700ps
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 60-TFBGA
• Supplier Device Package: 60-FBGA (10x12.5)

封装: 60-TFBGA

MT46V128M4BN-6:F

Micron Technology Inc.

IC SDRAM 512MBIT 167MHZ 60FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR
• Memory Size: 512Mb (128M x 4)
• Memory Interface: Parallel
• Clock Frequency: 167MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 700ps
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 60-TFBGA
• Supplier Device Package: 60-FBGA (10x12.5)

封装: 60-TFBGA

MT48LC64M8A2TG-75:C TR

Micron Technology Inc.

IC SDRAM 512MBIT 133MHZ 54TSOP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 512Mb (64M x 8)
• Memory Interface: Parallel
• Clock Frequency: 133MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 5.4ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 54-TSOP (0.400", 10.16mm Width)
• Supplier Device Package: 54-TSOP II

封装: 54-TSOP (0.400", 10.16mm Width)

MT52L256M64D2QB-125 XT ES:B

Micron Technology Inc.

IC SDRAM 16GBIT 800MHZ FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR3
• Memory Size: 16Gb (256M x 64)
• Memory Interface: -
• Clock Frequency: 800MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.2V
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

MT47H128M16RT-25E XIT:C

Micron Technology Inc.

IC SDRAM 2GBIT 400MHZ 84FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR2
• Memory Size: 2Gb (128M x 16)
• Memory Interface: Parallel
• Clock Frequency: 400MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 400ps
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 95°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 84-TFBGA
• Supplier Device Package: 84-FBGA (9x12.5)

封装: 84-TFBGA

MT48LC16M16A2B4-6A AIT:G

Micron Technology Inc.

IC SDRAM 256MBIT 167MHZ 54VFBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 256Mb (16M x 16)
• Memory Interface: Parallel
• Clock Frequency: 167MHz
• Write Cycle Time - Word, Page: 12ns
• Access Time: 5.4ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 54-VFBGA
• Supplier Device Package: 54-VFBGA (8x8)

封装: 54-VFBGA

EDB1316BDBH-1DIT-F-D

Micron Technology Inc.

IC SDRAM 1GBIT 533MHZ 134FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR2
• Memory Size: 1Gb (64M x 16)
• Memory Interface: Parallel
• Clock Frequency: 533MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.14 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 134-VFBGA
• Supplier Device Package: 134-VFBGA (10x11.5)

封装: 134-VFBGA

EDB5432BEPA-1DIT-F-D

Micron Technology Inc.

IC SDRAM 512MBIT 533MHZ 168WFBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR2
• Memory Size: 512Mb (16M x 32)
• Memory Interface: Parallel
• Clock Frequency: 533MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.14 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 168-WFBGA
• Supplier Device Package: 168-WFBGA (12x12)

封装: 168-WFBGA

N25Q064A13ESF40F TR

Micron Technology Inc.

IC FLASH 64MBIT 108MHZ 16SO

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 64Mb (16M x 4)
• Memory Interface: SPI
• Clock Frequency: 108MHz
• Write Cycle Time - Word, Page: 8ms, 5ms
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 16-SO W

封装: 16-SOIC (0.295", 7.50mm Width)

MT35XU02GCBA2G12-0AUT TR

Micron Technology Inc.

SPI FLASH NOR 2G 45NM IT QDP

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH
• Memory Size: 2Gb (256M x 8)
• Memory Interface: Xccela Bus
• Clock Frequency: 200MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.7 V ~ 2 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 24-TBGA
• Supplier Device Package: 24-TPBGA

封装: 24-TBGA

MT25QL128ABB8ESF-0AUT TR

Micron Technology Inc.

IC FLASH 128M SPI 133MHZ 16SOP2

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 128Mb (16M x 8)
• Memory Interface: SPI
• Clock Frequency: 133MHz
• Write Cycle Time - Word, Page: 8ms, 2.8ms
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 16-SOP2

封装: 16-SOIC (0.295", 7.50mm Width)

MT29F4G01ABAFDWB-IT:F

Micron Technology Inc.

IC FLASH 4G SPI UPDFN

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 4Gb (4G x 1)
• Memory Interface: SPI
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

MTFC64GAPALBH-AIT

Micron Technology Inc.

IC FLASH 512G MMC

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 512Gb (64G x 8)
• Memory Interface: MMC
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

MTFC32GAPALNA-AAT

Micron Technology Inc.

IC FLASH 256G MMC

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 256Gb (32G x 8)
• Memory Interface: MMC
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

MT29C4G48MAYBBAHK-48 AIT

Micron Technology Inc.

IC FLASH RAM 4G PARALLEL 208MHZ

• Memory Type: Non-Volatile
• Memory Format: FLASH, RAM
• Technology: FLASH - NAND, Mobile LPDRAM
• Memory Size: 4Gb (512M x 8)(NAND), 2G (64M x 32)(LPDRAM)
• Memory Interface: Parallel
• Clock Frequency: 208MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

MT53E1G64D4HJ-046-AAT-C-TR

Micron Technology Inc.

LPDDR4 64G 1GX64 FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR4X
• Memory Size: 64Gbit
• Memory Interface: Parallel
• Clock Frequency: 2.133 GHz
• Write Cycle Time - Word, Page: 18ns
• Access Time: 3.5 ns
• Voltage - Supply: 1.06V ~ 1.17V
• Operating Temperature: -40°C ~ 105°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 556-TFBGA
• Supplier Device Package: 556-WFBGA (12.4x12.4)

封装: -

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MT29F16T08GSLCEG4-QB-C

Micron Technology Inc.

QLC 16T 2TX8 FBGA 16DP

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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MT53E768M64D4HJ-046-WT-B

Micron Technology Inc.

LPDDR4 48G 768MX64 FBGA QDP

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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MT53E1G32D2FW-046-WT-B-TR

Micron Technology Inc.

IC DRAM 32GBIT 2.133GHZ 200VFBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR4
• Memory Size: 32Gbit
• Memory Interface: Parallel
• Clock Frequency: 2.133 GHz
• Write Cycle Time - Word, Page: 18ns
• Access Time: 3.5 ns
• Voltage - Supply: 1.06V ~ 1.17V
• Operating Temperature: -25°C ~ 85°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 200-TFBGA
• Supplier Device Package: 200-TFBGA (10x14.5)

封装: -

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MT57W1MH18BF-4

Micron Technology Inc.

IC SRAM 18MBIT HSTL 165FBGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Synchronous, DDR II
• Memory Size: 18Mbit
• Memory Interface: HSTL
• Clock Frequency: 250 MHz
• Write Cycle Time - Word, Page: -
• Access Time: 450 ps
• Voltage - Supply: 1.7V ~ 1.9V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 165-TBGA
• Supplier Device Package: 165-FBGA (13x15)

封装: -

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MT53E1536M32DDNQ-046-WT-A-TR

Micron Technology Inc.

LPDDR4 48G 1.5GX32 FBGA 3DP

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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MT41K128M16JT-17-K-TR

Micron Technology Inc.

IC DRAM 2GBIT PARALLEL 96FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR3L
• Memory Size: 2Gbit
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.283V ~ 1.45V
• Operating Temperature: 0°C ~ 95°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 96-TFBGA
• Supplier Device Package: 96-FBGA (8x14)

封装: -

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