Micron Technology Inc. 产品

M29F400FT55M3T2 TR

Micron Technology Inc.

IC FLASH 4MBIT 55NS 44SO

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 4Mb (512K x 8, 256K x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 55ns
• Access Time: 55ns
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 44-SOIC (0.496", 12.60mm Width)
• Supplier Device Package: 44-SO

封装: 44-SOIC (0.496", 12.60mm Width)

N25Q128A31EF840E

Micron Technology Inc.

IC FLASH 128MBIT 108MHZ 8VDFPN

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 128Mb (32M x 4)
• Memory Interface: SPI
• Clock Frequency: 108MHz
• Write Cycle Time - Word, Page: 8ms, 5ms
• Access Time: -
• Voltage - Supply: 1.7 V ~ 2 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-VDFN Exposed Pad
• Supplier Device Package: 8-VDFPN (MLP8) (8x6)

封装: 8-VDFN Exposed Pad

M29W640GB70ZF3F TR

Micron Technology Inc.

IC FLASH 64MBIT 70NS 64TBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 64Mb (8M x 8, 4M x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 70ns
• Access Time: 70ns
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-TBGA
• Supplier Device Package: 64-TBGA (10x13)

封装: 64-TBGA

RC28F128M29EWHF

Micron Technology Inc.

IC FLASH 128MBIT 60NS 64FBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 128Mb (16M x 8, 8M x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 60ns
• Access Time: 60ns
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LBGA
• Supplier Device Package: 64-FBGA (11x13)

封装: 64-LBGA

M29W640GL70NA6E

Micron Technology Inc.

IC FLASH 64MBIT 70NS 48TSOP

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 64Mb (8M x 8, 4M x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 70ns
• Access Time: 70ns
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-TFSOP (0.724", 18.40mm Width)
• Supplier Device Package: 48-TSOP

封装: 48-TFSOP (0.724", 18.40mm Width)

M29W400DT70N6F TR

Micron Technology Inc.

IC FLASH 4MBIT 70NS 48TSOP

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 4Mb (512K x 8, 256K x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 70ns
• Access Time: 70ns
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-TFSOP (0.724", 18.40mm Width)
• Supplier Device Package: 48-TSOP

封装: 48-TFSOP (0.724", 18.40mm Width)

MT48H16M32L2B5-10 IT

Micron Technology Inc.

IC SDRAM 512MBIT 100MHZ 90VFBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPSDR
• Memory Size: 512Mb (16M x 32)
• Memory Interface: Parallel
• Clock Frequency: 100MHz
• Write Cycle Time - Word, Page: -
• Access Time: 7.5ns
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 90-VFBGA
• Supplier Device Package: 90-VFBGA (8x13)

封装: 90-VFBGA

MT46V64M8P-75 IT:D TR

Micron Technology Inc.

IC SDRAM 512MBIT 133MHZ 66TSOP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR
• Memory Size: 512Mb (64M x 8)
• Memory Interface: Parallel
• Clock Frequency: 133MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 750ps
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 66-TSSOP (0.400", 10.16mm Width)
• Supplier Device Package: 66-TSOP

封装: 66-TSSOP (0.400", 10.16mm Width)

MT46V128M8TG-75:A TR

Micron Technology Inc.

IC SDRAM 1GBIT 133MHZ 66TSOP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR
• Memory Size: 1Gb (128M x 8)
• Memory Interface: Parallel
• Clock Frequency: 133MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 750ps
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 66-TSSOP (0.400", 10.16mm Width)
• Supplier Device Package: 66-TSOP

封装: 66-TSSOP (0.400", 10.16mm Width)

MT28F128J3RP-12 ET

Micron Technology Inc.

IC FLASH 128MBIT 120NS 56TSOP

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH
• Memory Size: 128Mb (16M x 8, 8M x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: 120ns
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 56-TFSOP (0.724", 18.40mm Width)
• Supplier Device Package: 56-TSOP I

封装: 56-TFSOP (0.724", 18.40mm Width)

MT29F2G08AABWP TR

Micron Technology Inc.

IC FLASH 2GBIT 48TSOP

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 2Gb (256M x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-TFSOP (0.724", 18.40mm Width)
• Supplier Device Package: 48-TSOP I

封装: 48-TFSOP (0.724", 18.40mm Width)

MT48LC16M16A2P-75:D TR

Micron Technology Inc.

IC SDRAM 256MBIT 133MHZ 54TSOP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 256Mb (16M x 16)
• Memory Interface: Parallel
• Clock Frequency: 133MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 5.4ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 54-TSOP (0.400", 10.16mm Width)
• Supplier Device Package: 54-TSOP II

封装: 54-TSOP (0.400", 10.16mm Width)

MT29E6T08ETHBBM5-3ES:B TR

Micron Technology Inc.

IC FLASH 6TBIT 333MHZ 132LBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 6Tb (768G x 8)
• Memory Interface: Parallel
• Clock Frequency: 333MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.5 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

MT29F512G08CUCDBJ6-6R:D

Micron Technology Inc.

IC FLASH 512GBIT 167MHZ 132LBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 512Gb (64G x 8)
• Memory Interface: Parallel
• Clock Frequency: 166MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 132-LBGA
• Supplier Device Package: 132-LBGA (12x18)

封装: 132-LBGA

MT53B768M32D4NQ-062 AIT:B TR

Micron Technology Inc.

IC SDRAM 24GBIT 1.6GHZ FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR4
• Memory Size: 24Gb (768M x 32)
• Memory Interface: -
• Clock Frequency: 1600MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.1V
• Operating Temperature: -40°C ~ 95°C (TC)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

MT48LC16M16A2B4-6A XIT:G

Micron Technology Inc.

IC SDRAM 256MBIT 167MHZ 54VFBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 256Mb (16M x 16)
• Memory Interface: Parallel
• Clock Frequency: 167MHz
• Write Cycle Time - Word, Page: 12ns
• Access Time: 5.4ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 54-VFBGA
• Supplier Device Package: 54-VFBGA (8x8)

封装: 54-VFBGA

MT46V16M8TG-6T IT:D TR

Micron Technology Inc.

IC SDRAM 128MBIT 167MHZ 66TSOP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR
• Memory Size: 128Mb (16M x 8)
• Memory Interface: Parallel
• Clock Frequency: 167MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 700ps
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 66-TSSOP (0.400", 10.16mm Width)
• Supplier Device Package: 66-TSOP

封装: 66-TSSOP (0.400", 10.16mm Width)

MT29F2G08ABBGAH4-IT:G TR

Micron Technology Inc.

IC FLASH 2GBIT 63VFBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 2Gb (256M x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 63-VFBGA
• Supplier Device Package: 63-VFBGA (9x11)

封装: 63-VFBGA

MT52L256M32D1PU-107 WT ES:B TR

Micron Technology Inc.

IC DRAM 8G 933MHZ FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR3
• Memory Size: 8Gb (256M x 32)
• Memory Interface: -
• Clock Frequency: 933MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.2V
• Operating Temperature: -30°C ~ 85°C (TC)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

MT40A512M16LY-062E IT:E TR

Micron Technology Inc.

IC DRAM 8G PARALLEL 1.6GHZ

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR4
• Memory Size: 8Gb (512M x 16)
• Memory Interface: Parallel
• Clock Frequency: 1.6GHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.14 V ~ 1.26 V
• Operating Temperature: -40°C ~ 95°C (TC)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

MT29F1HT08EMHBBJ4-3R:B

Micron Technology Inc.

IC FLASH 1.5T PARALLEL 333MHZ

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 1.5Tb (192G x 8)
• Memory Interface: Parallel
• Clock Frequency: 333MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.5 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

MT29VZZZBD8HQOWL-053 W.G8D TR

Micron Technology Inc.

ALL IN ONE MCP 5600G

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

MT53E128M32D2FW-046-AIT-A

Micron Technology Inc.

LPDDR4 4G 128MX32 FBGA DDP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR4
• Memory Size: 4Gbit
• Memory Interface: Parallel
• Clock Frequency: 2.133 GHz
• Write Cycle Time - Word, Page: 18ns
• Access Time: 3.5 ns
• Voltage - Supply: 1.06V ~ 1.17V
• Operating Temperature: -40°C ~ 95°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 200-TFBGA
• Supplier Device Package: 200-TFBGA (10x14.5)

封装: -

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MT62F1G64D4AM-031-XT-C-TR

Micron Technology Inc.

LPDDR5 64G 1GX64 FBGA

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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MT29F4G08ABBFAH4-AIT-F

Micron Technology Inc.

IC FLASH 4GBIT PARALLEL 63VFBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND (SLC)
• Memory Size: 4Gbit
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.7V ~ 1.95V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 63-VFBGA
• Supplier Device Package: 63-VFBGA (9x11)

封装: -

MT29F2T08EMLEEJ4-QC-E-TR

Micron Technology Inc.

TLC 2T 256GX8 VBGA QDP

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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MT53E2G64D8TN-046-WT-A

Micron Technology Inc.

LPDDR4 128G X64 LFBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR4X
• Memory Size: 128Gbit
• Memory Interface: Parallel
• Clock Frequency: 2.133 GHz
• Write Cycle Time - Word, Page: 18ns
• Access Time: 3.5 ns
• Voltage - Supply: 1.06V ~ 1.17V
• Operating Temperature: -25°C ~ 85°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 556-LFBGA
• Supplier Device Package: 556-LFBGA (12.4x12.4)

封装: -

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MT62F1G128D8AK-031-XT-B-TR

Micron Technology Inc.

LPDDR5 128G 1GX128 FBGA

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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MT29F1T08EELCEJ4-QJ-C

Micron Technology Inc.

TLC 1T 128GX8 VBGA DDP

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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MTFC16GAPALHT-AAT

Micron Technology Inc.

IC FLASH 128GBIT MMC

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 128Gbit
• Memory Interface: MMC
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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