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                                IGBT 600V 48A 150W TO220AB 
                                
                                    
                                    - IGBT Type: PT
 - Voltage - Collector Emitter Breakdown (Max): 600V
 - Current - Collector (Ic) (Max): 48A
 - Current - Collector Pulsed (Icm): 96A
 - Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
 - Power - Max: 150W
 - Switching Energy: 1.3mJ (off)
 - Input Type: Standard
 - Gate Charge: 41nC
 - Td (on/off) @ 25°C: 50ns/150ns
 - Test Condition: 480V, 24A, 33 Ohm, 15V
 - Reverse Recovery Time (trr): -
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Through Hole
 - Package / Case: TO-220-3
 - Supplier Device Package: TO-220AB
 
                                     
                                
                             
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                        封装: TO-220-3  | 
                        库存7,888  | 
                        
                            
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                                IGBT 2500V 23A 100W I4-PAK 
                                
                                    
                                    - IGBT Type: -
 - Voltage - Collector Emitter Breakdown (Max): 2500V
 - Current - Collector (Ic) (Max): 23A
 - Current - Collector Pulsed (Icm): 105A
 - Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 20A
 - Power - Max: 100W
 - Switching Energy: -
 - Input Type: Standard
 - Gate Charge: 53nC
 - Td (on/off) @ 25°C: -
 - Test Condition: -
 - Reverse Recovery Time (trr): -
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Through Hole
 - Package / Case: i4-Pac?-5 (3 leads)
 - Supplier Device Package: ISOPLUS i4-PAC?
 
                                     
                                
                             
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                        封装: i4-Pac?-5 (3 leads)  | 
                        库存5,552  | 
                        
                            
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                                IGBT 600V 75A 170W ISOPLUS247 
                                
                                    
                                    - IGBT Type: PT
 - Voltage - Collector Emitter Breakdown (Max): 600V
 - Current - Collector (Ic) (Max): 75A
 - Current - Collector Pulsed (Icm): 260A
 - Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
 - Power - Max: 170W
 - Switching Energy: 830µJ (on), 450µJ (off)
 - Input Type: Standard
 - Gate Charge: 115nC
 - Td (on/off) @ 25°C: 24ns/70ns
 - Test Condition: 480V, 40A, 3 Ohm, 15V
 - Reverse Recovery Time (trr): -
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Through Hole
 - Package / Case: ISOPLUS247?
 - Supplier Device Package: ISOPLUS247?
 
                                     
                                
                             
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                        封装: ISOPLUS247?  | 
                        库存5,744  | 
                        
                            
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                                IGBT 1700V 16A 190W TO268 
                                
                                    
                                    - IGBT Type: NPT
 - Voltage - Collector Emitter Breakdown (Max): 1700V
 - Current - Collector (Ic) (Max): 16A
 - Current - Collector Pulsed (Icm): 40A
 - Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 11A
 - Power - Max: 190W
 - Switching Energy: 900µJ (off)
 - Input Type: Standard
 - Gate Charge: 65nC
 - Td (on/off) @ 25°C: 36ns/160ns
 - Test Condition: 850V, 16A, 10 Ohm, 15V
 - Reverse Recovery Time (trr): -
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Surface Mount
 - Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
 - Supplier Device Package: TO-268
 
                                     
                                
                             
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                        封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA  | 
                        库存3,216  | 
                        
                            
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                                IGBT 1700V 6A 75W TO247AD 
                                
                                    
                                    - IGBT Type: NPT
 - Voltage - Collector Emitter Breakdown (Max): 1700V
 - Current - Collector (Ic) (Max): 6A
 - Current - Collector Pulsed (Icm): 14A
 - Vce(on) (Max) @ Vge, Ic: 7V @ 15V, 3A
 - Power - Max: 75W
 - Switching Energy: 590µJ (on), 180µJ (off)
 - Input Type: Standard
 - Gate Charge: 18.5nC
 - Td (on/off) @ 25°C: 46ns/220ns
 - Test Condition: 850V, 6A, 33 Ohm, 15V
 - Reverse Recovery Time (trr): -
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Through Hole
 - Package / Case: TO-247-3
 - Supplier Device Package: TO-247AD (IXGH)
 
                                     
                                
                             
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                        封装: TO-247-3  | 
                        库存160,452  | 
                        
                            
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                                IGBT 1200V 75A 300W TO247 
                                
                                    
                                    - IGBT Type: -
 - Voltage - Collector Emitter Breakdown (Max): 1200V
 - Current - Collector (Ic) (Max): 75A
 - Current - Collector Pulsed (Icm): 180A
 - Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 45A
 - Power - Max: 300W
 - Switching Energy: 14mJ (off)
 - Input Type: Standard
 - Gate Charge: 170nC
 - Td (on/off) @ 25°C: 55ns/370ns
 - Test Condition: 960V, 45A, 5 Ohm, 15V
 - Reverse Recovery Time (trr): -
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Through Hole
 - Package / Case: TO-247-3
 - Supplier Device Package: TO-247AD (IXGH)
 
                                     
                                
                             
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                        封装: TO-247-3  | 
                        库存5,152  | 
                        
                            
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                                IGBT 1700V 32A 350W TO247 
                                
                                    
                                    - IGBT Type: NPT
 - Voltage - Collector Emitter Breakdown (Max): 1700V
 - Current - Collector (Ic) (Max): 32A
 - Current - Collector Pulsed (Icm): 110A
 - Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 21A
 - Power - Max: 350W
 - Switching Energy: 1.5mJ (off)
 - Input Type: Standard
 - Gate Charge: 155nC
 - Td (on/off) @ 25°C: 46ns/260ns
 - Test Condition: 850V, 32A, 2.7 Ohm, 15V
 - Reverse Recovery Time (trr): -
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Through Hole
 - Package / Case: TO-247-3
 - Supplier Device Package: TO-247AD (IXGH)
 
                                     
                                
                             
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                        封装: TO-247-3  | 
                        库存118,800  | 
                        
                            
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                                IGBT 600V 75A SOT-227B 
                                
                                    
                                    - IGBT Type: PT
 - Configuration: Single
 - Voltage - Collector Emitter Breakdown (Max): 600V
 - Current - Collector (Ic) (Max): 75A
 - Power - Max: 480W
 - Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
 - Current - Collector Cutoff (Max): 650µA
 - Input Capacitance (Cies) @ Vce: 4.75nF @ 25V
 - Input: Standard
 - NTC Thermistor: No
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Chassis Mount
 - Package / Case: SOT-227-4, miniBLOC
 - Supplier Device Package: SOT-227B
 
                                     
                                
                             
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                        封装: SOT-227-4, miniBLOC  | 
                        库存5,056  | 
                        
                            
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                                IGBT 1200V 58A GENX3 SOT-227B 
                                
                                    
                                    - IGBT Type: PT
 - Configuration: Single
 - Voltage - Collector Emitter Breakdown (Max): 1200V
 - Current - Collector (Ic) (Max): 130A
 - Power - Max: 595W
 - Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 82A
 - Current - Collector Cutoff (Max): 50µA
 - Input Capacitance (Cies) @ Vce: 7.9nF @ 25V
 - Input: Standard
 - NTC Thermistor: No
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Chassis Mount
 - Package / Case: SOT-227-4, miniBLOC
 - Supplier Device Package: SOT-227B
 
                                     
                                
                             
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                        封装: SOT-227-4, miniBLOC  | 
                        库存7,904  | 
                        
                            
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                                MOSFET N-CH 4500V 0.2A TO263 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 4500V
 - Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 10V
 - Vgs(th) (Max) @ Id: 6.5V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 10V
 - Input Capacitance (Ciss) (Max) @ Vds: 256pF @ 25V
 - Vgs (Max): ±20V
 - FET Feature: -
 - Power Dissipation (Max): 113W (Tc)
 - Rds On (Max) @ Id, Vgs: 750 Ohm @ 10mA, 10V
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Surface Mount
 - Supplier Device Package: TO-263 (IXTA)
 - Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
 
                                     
                                
                             
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                        封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB  | 
                        库存5,664  | 
                        
                            
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                                MOSFET N-CH 500V 12A ISOPLUS220 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 500V
 - Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 10V
 - Vgs(th) (Max) @ Id: 4V @ 2.5mA
 - Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
 - Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V
 - Vgs (Max): ±20V
 - FET Feature: -
 - Power Dissipation (Max): 140W (Tc)
 - Rds On (Max) @ Id, Vgs: 400 mOhm @ 6.5A, 10V
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Through Hole
 - Supplier Device Package: ISOPLUS220?
 - Package / Case: ISOPLUS220?
 
                                     
                                
                             
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                        封装: ISOPLUS220?  | 
                        库存2,896  | 
                        
                            
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                                MOSFET N-CH 550V 60A PLUS247 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 550V
 - Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 10V
 - Vgs(th) (Max) @ Id: 4.5V @ 8mA
 - Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
 - Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V
 - Vgs (Max): ±30V
 - FET Feature: -
 - Power Dissipation (Max): 735W (Tc)
 - Rds On (Max) @ Id, Vgs: 88 mOhm @ 30A, 10V
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Through Hole
 - Supplier Device Package: PLUS247?-3
 - Package / Case: TO-247-3
 
                                     
                                
                             
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                        封装: TO-247-3  | 
                        库存7,056  | 
                        
                            
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                                MOSFET N-CH 1KV 18A ISOPLUS247 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 1000V
 - Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 10V
 - Vgs(th) (Max) @ Id: 5V @ 4mA
 - Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
 - Input Capacitance (Ciss) (Max) @ Vds: 5900pF @ 25V
 - Vgs (Max): ±20V
 - FET Feature: -
 - Power Dissipation (Max): 350W (Tc)
 - Rds On (Max) @ Id, Vgs: 500 mOhm @ 10.5A, 10V
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Through Hole
 - Supplier Device Package: ISOPLUS247?
 - Package / Case: ISOPLUS247?
 
                                     
                                
                             
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                        封装: ISOPLUS247?  | 
                        库存4,672  | 
                        
                            
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                                MOSFET N-CH 100V 170A TO-264 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 100V
 - Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 10V
 - Vgs(th) (Max) @ Id: 5V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 198nC @ 10V
 - Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V
 - Vgs (Max): ±20V
 - FET Feature: -
 - Power Dissipation (Max): 715W (Tc)
 - Rds On (Max) @ Id, Vgs: 9 mOhm @ 500mA, 10V
 - Operating Temperature: -55°C ~ 175°C (TJ)
 - Mounting Type: Through Hole
 - Supplier Device Package: TO-264 (IXTK)
 - Package / Case: TO-264-3, TO-264AA
 
                                     
                                
                             
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                        封装: TO-264-3, TO-264AA  | 
                        库存3,920  | 
                        
                            
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                                MOSFET P-CH 85V 50A TO-268 
                                
                                    
                                    - FET Type: P-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 85V
 - Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 10V
 - Vgs(th) (Max) @ Id: 5V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
 - Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V
 - Vgs (Max): ±20V
 - FET Feature: -
 - Power Dissipation (Max): 300W (Tc)
 - Rds On (Max) @ Id, Vgs: 55 mOhm @ 25A, 10V
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Surface Mount
 - Supplier Device Package: TO-268
 - Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
 
                                     
                                
                             
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                        封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA  | 
                        库存6,560  | 
                        
                            
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                                MOSFET N-CH 55V 110A TO-220 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 55V
 - Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 10V
 - Vgs(th) (Max) @ Id: 5.5V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 76nC @ 10V
 - Input Capacitance (Ciss) (Max) @ Vds: 2210pF @ 25V
 - Vgs (Max): ±20V
 - FET Feature: -
 - Power Dissipation (Max): 390W (Tc)
 - Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 500mA, 10V
 - Operating Temperature: -55°C ~ 175°C (TJ)
 - Mounting Type: Through Hole
 - Supplier Device Package: TO-220AB
 - Package / Case: TO-220-3
 
                                     
                                
                             
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                        封装: TO-220-3  | 
                        库存4,720  | 
                        
                            
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                                MOSFET N-CH 200V 48A TO-263 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 200V
 - Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 10V
 - Vgs(th) (Max) @ Id: 4.5V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
 - Input Capacitance (Ciss) (Max) @ Vds: 3090pF @ 25V
 - Vgs (Max): ±30V
 - FET Feature: -
 - Power Dissipation (Max): 250W (Tc)
 - Rds On (Max) @ Id, Vgs: 50 mOhm @ 24A, 10V
 - Operating Temperature: -55°C ~ 175°C (TJ)
 - Mounting Type: Surface Mount
 - Supplier Device Package: TO-263 (IXTA)
 - Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
 
                                     
                                
                             
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                        封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB  | 
                        库存6,240  | 
                        
                            
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                                MOSFET N-CH 1000V 1A TO-252 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 1000V
 - Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 10V
 - Vgs(th) (Max) @ Id: 4.5V @ 50µA
 - Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
 - Input Capacitance (Ciss) (Max) @ Vds: 331pF @ 25V
 - Vgs (Max): ±20V
 - FET Feature: -
 - Power Dissipation (Max): 50W (Tc)
 - Rds On (Max) @ Id, Vgs: 15 Ohm @ 500mA, 10V
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Surface Mount
 - Supplier Device Package: TO-252, (D-Pak)
 - Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
 
                                     
                                
                             
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                        封装: TO-252-3, DPak (2 Leads + Tab), SC-63  | 
                        库存7,120  | 
                        
                            
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                                RECT BRIDGE 1PH 1600V FO-T-A 
                                
                                    
                                    - Structure: Bridge, Single Phase - SCRs/Diodes (Layout 3)
 - Number of SCRs, Diodes: 2 SCRs, 2 Diodes
 - Voltage - Off State: 1600V
 - Current - On State (It (AV)) (Max): 53A
 - Current - On State (It (RMS)) (Max): -
 - Voltage - Gate Trigger (Vgt) (Max): 1.5V
 - Current - Gate Trigger (Igt) (Max): 100mA
 - Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 600A
 - Current - Hold (Ih) (Max): 200mA
 - Operating Temperature: -40°C ~ 125°C (TJ)
 - Mounting Type: Chassis Mount
 - Package / Case: FO-T-A
 
                                     
                                
                             
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                        封装: FO-T-A  | 
                        库存2,288  | 
                        
                            
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                                RECT BRIDGE 3PH 800V FO-T-A 
                                
                                    
                                    - Structure: Bridge, 3-Phase - All SCRs
 - Number of SCRs, Diodes: 6 SCRs
 - Voltage - Off State: 800V
 - Current - On State (It (AV)) (Max): 70A
 - Current - On State (It (RMS)) (Max): -
 - Voltage - Gate Trigger (Vgt) (Max): 1.5V
 - Current - Gate Trigger (Igt) (Max): 100mA
 - Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 600A
 - Current - Hold (Ih) (Max): 200mA
 - Operating Temperature: -40°C ~ 125°C (TJ)
 - Mounting Type: Chassis Mount
 - Package / Case: FO-T-A
 
                                     
                                
                             
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                        封装: FO-T-A  | 
                        库存4,016  | 
                        
                            
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                                MOD THYRISTOR DUAL 800V TO-240AA 
                                
                                    
                                    - Structure: Series Connection - All SCRs
 - Number of SCRs, Diodes: 2 SCRs
 - Voltage - Off State: 800V
 - Current - On State (It (AV)) (Max): 116A
 - Current - On State (It (RMS)) (Max): 180A
 - Voltage - Gate Trigger (Vgt) (Max): 2.5V
 - Current - Gate Trigger (Igt) (Max): 150mA
 - Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2400A
 - Current - Hold (Ih) (Max): 200mA
 - Operating Temperature: -40°C ~ 125°C (TJ)
 - Mounting Type: Chassis Mount
 - Package / Case: TO-240AA
 
                                     
                                
                             
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                        封装: TO-240AA  | 
                        库存7,664  | 
                        
                            
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                                MODULE AC CONTROL 800V ECO-PAC1 
                                
                                    
                                    - Structure: 1-Phase Controller - All SCRs
 - Number of SCRs, Diodes: 2 SCRs
 - Voltage - Off State: 800V
 - Current - On State (It (AV)) (Max): 80A
 - Current - On State (It (RMS)) (Max): 125A
 - Voltage - Gate Trigger (Vgt) (Max): 1.5V
 - Current - Gate Trigger (Igt) (Max): 100mA
 - Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1600A
 - Current - Hold (Ih) (Max): 200mA
 - Operating Temperature: -40°C ~ 150°C (TJ)
 - Mounting Type: Chassis Mount
 - Package / Case: Module
 
                                     
                                
                             
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                        封装: Module  | 
                        库存3,600  | 
                        
                            
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                                DIODE MODULE 600V 304A Y4-M6 
                                
                                    
                                    - Diode Configuration: 1 Pair Common Cathode
 - Diode Type: Standard
 - Voltage - DC Reverse (Vr) (Max): 600V
 - Current - Average Rectified (Io) (per Diode): 304A
 - Voltage - Forward (Vf) (Max) @ If: 1.36V @ 260A
 - Speed: Fast Recovery =< 500ns, > 200mA (Io)
 - Reverse Recovery Time (trr): 300ns
 - Current - Reverse Leakage @ Vr: 12mA @ 600V
 - Operating Temperature - Junction: -
 - Mounting Type: Chassis Mount
 - Package / Case: Y4-M6
 - Supplier Device Package: Y4-M6
 
                                     
                                
                             
                         | 
                        封装: Y4-M6  | 
                        库存4,864  | 
                        
                            
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                        IXYS  | 
                        
                            
                                DIODE BRIDGE 1600V 55A FO-T-A 
                                
                                    
                                    - Diode Type: Single Phase
 - Technology: Standard
 - Voltage - Peak Reverse (Max): 1600V
 - Current - Average Rectified (Io): 55A
 - Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A
 - Current - Reverse Leakage @ Vr: 500µA @ 1600V
 - Operating Temperature: -40°C ~ 150°C (TJ)
 - Mounting Type: Chassis Mount
 - Package / Case: FO-T-A
 - Supplier Device Package: FO-T-A
 
                                     
                                
                             
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                        封装: FO-T-A  | 
                        库存6,112  | 
                        
                            
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                        IXYS  | 
                        
                            
                                RECT BRIDGE 3PH 1400V ECO-PAC1 
                                
                                    
                                    - Diode Type: Three Phase
 - Technology: Standard
 - Voltage - Peak Reverse (Max): 1400V
 - Current - Average Rectified (Io): 86A
 - Voltage - Forward (Vf) (Max) @ If: 1.14V @ 30A
 - Current - Reverse Leakage @ Vr: 40µA @ 1400V
 - Operating Temperature: -40°C ~ 150°C (TJ)
 - Mounting Type: Chassis Mount
 - Package / Case: ECO-PAC1
 - Supplier Device Package: ECO-PAC1
 
                                     
                                
                             
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                        封装: ECO-PAC1  | 
                        库存5,280  | 
                        
                            
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                                IC GATE DRIVER 14A LO SIDE 6-DFN 
                                
                                    
                                    - Driven Configuration: Low-Side
 - Channel Type: Single
 - Number of Drivers: 1
 - Gate Type: IGBT, N-Channel, P-Channel MOSFET
 - Voltage - Supply: 4.5 V ~ 30 V
 - Logic Voltage - VIL, VIH: 1V, 2.5V
 - Current - Peak Output (Source, Sink): 14A, 14A
 - Input Type: Non-Inverting
 - High Side Voltage - Max (Bootstrap): -
 - Rise / Fall Time (Typ): 25ns, 22ns
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Surface Mount
 - Package / Case: 6-VDFN Exposed Pad
 - Supplier Device Package: 6-DFN (4x5)
 
                                     
                                
                             
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                        封装: 6-VDFN Exposed Pad  | 
                        库存4,688  | 
                        
                            
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                        IXYS  | 
                        
                            
                                IC MOSFET DRIVER LS 4A DUAL 8DIP 
                                
                                    
                                    - Driven Configuration: Low-Side
 - Channel Type: Independent
 - Number of Drivers: 2
 - Gate Type: IGBT, N-Channel, P-Channel MOSFET
 - Voltage - Supply: 4.5 V ~ 35 V
 - Logic Voltage - VIL, VIH: 0.8V, 2.5V
 - Current - Peak Output (Source, Sink): 4A, 4A
 - Input Type: Inverting
 - High Side Voltage - Max (Bootstrap): -
 - Rise / Fall Time (Typ): 16ns, 13ns
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Through Hole
 - Package / Case: 8-DIP (0.300", 7.62mm)
 - Supplier Device Package: 8-PDIP
 
                                     
                                
                             
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                        封装: 8-DIP (0.300", 7.62mm)  | 
                        库存24,060  | 
                        
                            
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                                SCR 1.6KV 3571A WP2 
                                
                                    
                                    - Voltage - Off State: 1.6 kV
 - Voltage - Gate Trigger (Vgt) (Max): 3 V
 - Current - Gate Trigger (Igt) (Max): 300 mA
 - Voltage - On State (Vtm) (Max): 2.4 V
 - Current - On State (It (AV)) (Max): 1806 A
 - Current - On State (It (RMS)) (Max): 3571 A
 - Current - Hold (Ih) (Max): 1 A
 - Current - Off State (Max): 100 mA
 - Current - Non Rep. Surge 50, 60Hz (Itsm): 21000A @ 50Hz
 - SCR Type: Standard Recovery
 - Operating Temperature: -40°C ~ 125°C
 - Mounting Type: Chassis Mount
 - Package / Case: TO-200AB, B-PuK
 - Supplier Device Package: WP2
 
                                     
                                
                             
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                        封装: -  | 
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                                MOSFET N-CHANNEL 250V 30A TO220 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 250 V
 - Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 10V
 - Vgs(th) (Max) @ Id: 4.5V @ 500µA
 - Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
 - Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
 - Vgs (Max): ±20V
 - FET Feature: -
 - Power Dissipation (Max): 176W (Tc)
 - Rds On (Max) @ Id, Vgs: 60mOhm @ 15A, 10V
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Through Hole
 - Supplier Device Package: TO-220-3
 - Package / Case: TO-220-3
 
                                     
                                
                             
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                        封装: -  | 
                        库存297  | 
                        
                            
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                        IXYS  | 
                        
                            
                                IGBT MODULE MIXG180W1200PTEH-PC 
                                
                                    
                                    - IGBT Type: -
 - Configuration: -
 - Voltage - Collector Emitter Breakdown (Max): -
 - Current - Collector (Ic) (Max): -
 - Power - Max: -
 - Vce(on) (Max) @ Vge, Ic: -
 - Current - Collector Cutoff (Max): -
 - Input Capacitance (Cies) @ Vce: -
 - Input: -
 - NTC Thermistor: -
 - Operating Temperature: -
 - Mounting Type: -
 - Package / Case: -
 - Supplier Device Package: -
 
                                     
                                
                             
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                        封装: -  | 
                        Request a Quote  | 
                        
                            
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