页 32 - IXYS 产品 | 深圳黑森尔电子
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IXYS 产品

记录 5,468
页  32/183
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IXGR60N60C2G1
IXYS

IGBT 600V 75A ISOPLUS247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS247?
  • Supplier Device Package: ISOPLUS247?
封装: ISOPLUS247?
库存6,496
hot IXSH35N140A
IXYS

IGBT 1400V 70A 300W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1400V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): 140A
  • Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 35A
  • Power - Max: 300W
  • Switching Energy: 4mJ (off)
  • Input Type: Standard
  • Gate Charge: 120nC
  • Td (on/off) @ 25°C: 40ns/150ns
  • Test Condition: 960V, 35A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXSH)
封装: TO-247-3
库存21,600
IXGR40N120A2D1
IXYS

IGBT 1200V ISOPLUS247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS247?
  • Supplier Device Package: ISOPLUS247?
封装: ISOPLUS247?
库存2,288
IXGT20N140C3H1
IXYS

IGBT 1400V 42A 250W TO268

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1400V
  • Current - Collector (Ic) (Max): 42A
  • Current - Collector Pulsed (Icm): 108A
  • Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 20A
  • Power - Max: 250W
  • Switching Energy: 1.35mJ (on), 440µJ (off)
  • Input Type: Standard
  • Gate Charge: 88nC
  • Td (on/off) @ 25°C: 19ns/110ns
  • Test Condition: 700V, 20A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 70ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
库存6,848
hot IXGH48N60A3D1
IXYS

IGBT 600V 300W TO247AD

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 300A
  • Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 32A
  • Power - Max: 300W
  • Switching Energy: 950µJ (on), 2.9mJ (off)
  • Input Type: Standard
  • Gate Charge: 110nC
  • Td (on/off) @ 25°C: 25ns/334ns
  • Test Condition: 480V, 32A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 25ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
封装: TO-247-3
库存6,880
MIAA10WD600TMH
IXYS

MODULE IGBT CBI

  • IGBT Type: NPT
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 18A
  • Power - Max: 70W
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 10A
  • Current - Collector Cutoff (Max): 600µA
  • Input Capacitance (Cies) @ Vce: 0.45nF @ 25V
  • Input: Single Phase Bridge Rectifier
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: MiniPack2
  • Supplier Device Package: MiniPack2
封装: MiniPack2
库存6,496
IXFC24N50
IXYS

MOSFET N-CH 500V 21A ISOPLUS220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 230W (Tc)
  • Rds On (Max) @ Id, Vgs: 230 mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: ISOPLUS220?
  • Package / Case: ISOPLUS220?
封装: ISOPLUS220?
库存5,456
hot IXTH200N075T
IXYS

MOSFET N-CH 75V 200A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 430W (Tc)
  • Rds On (Max) @ Id, Vgs: 5 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 (IXTH)
  • Package / Case: TO-247-3
封装: TO-247-3
库存68,640
IXFT15N100Q
IXYS

MOSFET N-CH 1000V 15A TO-268

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 170nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 360W (Tc)
  • Rds On (Max) @ Id, Vgs: 700 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
库存3,888
hot IXTH40N50L2
IXYS

MOSFET N-CH 500V 40A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 320nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10400pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 540W (Tc)
  • Rds On (Max) @ Id, Vgs: 170 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 (IXTH)
  • Package / Case: TO-247-3
封装: TO-247-3
库存390,000
IXFK120N30T
IXYS

MOSFET N-CH 300V 120A TO-264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 265nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 960W (Tc)
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 60A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264AA (IXFK)
  • Package / Case: TO-264-3, TO-264AA
封装: TO-264-3, TO-264AA
库存6,848
hot IXTP170N075T2
IXYS

MOSFET N-CH 75V 170A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 109nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6860pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 360W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封装: TO-220-3
库存450,564
IXTU5N50P
IXYS

MOSFET N-CH 500V 4.8A TO-252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 89W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存2,032
IXFT30N85XHV
IXYS

MOSFET N-CH 850V 30A TO268-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 850V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2460pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 695W (Tc)
  • Rds On (Max) @ Id, Vgs: 220 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268 (IXFT)
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
库存3,824
IXTP140P05T
IXYS

MOSFET P-CH 50V 140A TO-220

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 298W (Tc)
  • Rds On (Max) @ Id, Vgs: 9 mOhm @ 70A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封装: TO-220-3
库存12,024
IXTH16P60P
IXYS

MOSFET P-CH 600V 16A TO-247

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5120pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 460W (Tc)
  • Rds On (Max) @ Id, Vgs: 720 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 (IXTH)
  • Package / Case: TO-247-3
封装: TO-247-3
库存6,780
IXZH10N50L2A
IXYS

RF MOSFET N-CHANNEL TO-247

  • Transistor Type: N-Channel
  • Frequency: 2MHz ~ 110MHz
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 1mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 200W
  • Voltage - Rated: 500V
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXFH)
封装: TO-247-3
库存5,024
MCC162-14IO1
IXYS

MOD THYRISTOR DUAL 1400V Y4-M6

  • Structure: Series Connection - All SCRs
  • Number of SCRs, Diodes: 2 SCRs
  • Voltage - Off State: 1400V
  • Current - On State (It (AV)) (Max): 190A
  • Current - On State (It (RMS)) (Max): 300A
  • Voltage - Gate Trigger (Vgt) (Max): 2.5V
  • Current - Gate Trigger (Igt) (Max): 150mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6400A
  • Current - Hold (Ih) (Max): 200mA
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Y4-M6
封装: Y4-M6
库存5,104
VVZ24-14IO1
IXYS

RECT BRIDGE 3PH 27A 1400V KAMM

  • Structure: Bridge, 3-Phase - SCRs/Diodes
  • Number of SCRs, Diodes: 3 SCRs, 3 Diodes
  • Voltage - Off State: 1400V
  • Current - On State (It (AV)) (Max): 21A
  • Current - On State (It (RMS)) (Max): 16A
  • Voltage - Gate Trigger (Vgt) (Max): 1V
  • Current - Gate Trigger (Igt) (Max): 65mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 300A, 320A
  • Current - Hold (Ih) (Max): 100mA
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: KAMM
封装: KAMM
库存2,624
MCD44-18IO8B
IXYS

MOD THYRISTOR DUAL 1800V TO240AA

  • Structure: Series Connection - SCR/Diode
  • Number of SCRs, Diodes: 1 SCR, 1 Diode
  • Voltage - Off State: 1800V
  • Current - On State (It (AV)) (Max): 51A
  • Current - On State (It (RMS)) (Max): 80A
  • Voltage - Gate Trigger (Vgt) (Max): 1.5V
  • Current - Gate Trigger (Igt) (Max): 100mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 1150A, 1230A
  • Current - Hold (Ih) (Max): 200mA
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: TO-240AA
封装: TO-240AA
库存7,472
MCO25-12IO1
IXYS

MOD THYRISTOR SGL 1200V SOT-227B

  • Structure: Single
  • Number of SCRs, Diodes: 1 SCR
  • Voltage - Off State: 1200V
  • Current - On State (It (AV)) (Max): 31A
  • Current - On State (It (RMS)) (Max): 49A
  • Voltage - Gate Trigger (Vgt) (Max): 1.5V
  • Current - Gate Trigger (Igt) (Max): 55mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 370A, 400A
  • Current - Hold (Ih) (Max): 100mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
封装: SOT-227-4, miniBLOC
库存2,560
VVZF70-16IO7
IXYS

RECT BRIDGE 3PH 1600V FO-T-A

  • Structure: Bridge, 3-Phase - SCRs/Diodes
  • Number of SCRs, Diodes: 3 SCRs, 3 Diodes
  • Voltage - Off State: 1600V
  • Current - On State (It (AV)) (Max): 70A
  • Current - On State (It (RMS)) (Max): -
  • Voltage - Gate Trigger (Vgt) (Max): 1.5V
  • Current - Gate Trigger (Igt) (Max): 100mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 600A
  • Current - Hold (Ih) (Max): 200mA
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: FO-T-A
封装: FO-T-A
库存5,296
DSA1-18D
IXYS

DIODE AVALANCHE 1.8KV 2.3A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 1800V
  • Current - Average Rectified (Io): 2.3A
  • Voltage - Forward (Vf) (Max) @ If: 1.34V @ 7A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 700µA @ 1800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: Radial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: Radial
库存19,668
hot DSEI2X101-12A
IXYS

DIODE MODULE 1.2KV 91A SOT227B

  • Diode Configuration: 2 Independent
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io) (per Diode): 91A
  • Voltage - Forward (Vf) (Max) @ If: 1.87V @ 100A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 3mA @ 1200V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227B
封装: SOT-227-4, miniBLOC
库存7,360
VBO13-14NO2
IXYS

DIODE BRIDGE 18A 1400V 1PH FO-A

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1400V
  • Current - Average Rectified (Io): 18A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 55A
  • Current - Reverse Leakage @ Vr: 300µA @ 1400V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square, FO-A
  • Supplier Device Package: FO-A
封装: 4-Square, FO-A
库存4,208
DVRFD615X2
IXYS

IXRFD615X2 DEV BOARD

  • Type: MOSFET Driver
  • Frequency: -
  • For Use With/Related Products: IXRFD615X2
  • Supplied Contents: Board
封装: -
库存4,482
DSEP12-12BZ-TUB
IXYS

DIODE GEN PURP 1.2KV 12A TO263HV

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 3.25 V @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 70 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
  • Capacitance @ Vr, F: 5pF @ 600V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263HV
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
库存150
IXTJ3N150
IXYS

MOSFET N-CH TO247

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
Request a Quote
IXTY2N100P-TRL
IXYS

MOSFET N-CH 1000V 2A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000 V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 24.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 86W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.5Ohm @ 1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封装: -
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IXTA05N100P
IXYS

MOSFET N-CH 1000V 750MA TO263

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
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