页 566 - Infineon Technologies 产品

零件编号	制造商	描述	封装	库存
IHW15T120FKSA1	Infineon Technologies	IGBT 1200V 30A 113W TO247-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 45A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A Power - Max: 113W Switching Energy: 2.7mJ Input Type: Standard Gate Charge: 85nC Td (on/off) @ 25°C: 50ns/520ns Test Condition: 600V, 15A, 56 Ohm, 15V Reverse Recovery Time (trr): 140ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	封装: TO-247-3	库存4,928
IRGP4790D-EPBF	Infineon Technologies	IGBT 650V TO-247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 140A Current - Collector Pulsed (Icm): 225A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A Power - Max: 455W Switching Energy: 2.5mJ (on), 2.2mJ (off) Input Type: Standard Gate Charge: 210nC Td (on/off) @ 25°C: 50ns/200ns Test Condition: 400V, 75A, 10 Ohm, 15V Reverse Recovery Time (trr): 170ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	封装: TO-247-3	库存3,440
IPU60R2K0C6BKMA1	Infineon Technologies	MOSFET N-CH 600V 2.4A TO-251 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 60µA Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 22.3W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 760mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	封装: TO-251-3 Short Leads, IPak, TO-251AA	库存2,928
IPB65R095C7ATMA1	Infineon Technologies	MOSFET N-CH TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 590µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2140pF @ 400V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 128W (Tc) Rds On (Max) @ Id, Vgs: 95 mOhm @ 11.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存7,888
IPP80N06S209AKSA2	Infineon Technologies	MOSFET N-CH 55V 80A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 125µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2360pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	封装: TO-220-3	库存16,752
IPD90P03P404ATMA1	Infineon Technologies	MOSFET P-CH 30V 90A TO252-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 253µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 137W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 90A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存615,552
BF1009SE6327HTSA1	Infineon Technologies	MOSFET N-CH 12V 25MA SOT-143 Transistor Type: N-Channel Frequency: 800MHz Gain: 22dB Voltage - Test: 9V Current Rating: 25mA Noise Figure: 1.4dB Current - Test: - Power - Output: - Voltage - Rated: 12V Package / Case: TO-253-4, TO-253AA Supplier Device Package: PG-SOT143-4	封装: TO-253-4, TO-253AA	库存7,872
BC 846B E6433	Infineon Technologies	TRANS NPN 65V 0.1A SOT-23 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 65V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 330mW Frequency - Transition: 250MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	封装: TO-236-3, SC-59, SOT-23-3	库存3,552
BBY5202WH6327XTSA1	Infineon Technologies	DIODE TUNING 7V 20MA SCD80 Capacitance @ Vr, F: 1.45pF @ 4V, 1MHz Capacitance Ratio: 2.1 Capacitance Ratio Condition: C1/C4 Voltage - Peak Reverse (Max): 7V Diode Type: Single Q @ Vr, F: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-80 Supplier Device Package: PG-SCD80-2	封装: SC-80	库存5,680
IDD08SG60CXTMA1	Infineon Technologies	DIODE SCHOTTKY 600V 8A TO252-3 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 8A (DC) Voltage - Forward (Vf) (Max) @ If: 2.1V @ 8A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 70µA @ 600V Capacitance @ Vr, F: 240pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: PG-TO252-3 Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存6,192
21-0065PBF	Infineon Technologies	IC REG BUCK ADJ 25A SYNC LGA Function: Step-Down Output Configuration: Positive Topology: Buck Output Type: Adjustable Number of Outputs: 1 Voltage - Input (Min): 1.5V Voltage - Input (Max): 16V Voltage - Output (Min/Fixed): 0.6V Voltage - Output (Max): 12V Current - Output: 25A Frequency - Switching: 225kHz ~ 1.65MHz Synchronous Rectifier: Yes Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 17-LLGA Supplier Device Package: 17-LGA (7.65x7.65)	封装: 17-LLGA	库存2,000
BTS54040LBEAUMA1	Infineon Technologies	IC PWR SWITCH HISIDE PG-TSON-24 Switch Type: General Purpose Number of Outputs: 4 Ratio - Input:Output: 1:2 Output Configuration: High Side Output Type: N-Channel Interface: SPI Voltage - Load: 5.5 V ~ 28 V Voltage - Supply (Vcc/Vdd): 3.8 V ~ 5.5 V Current - Output (Max): 2A Rds On (Typ): 39 mOhm Input Type: - Features: - Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Operating Temperature: -40°C ~ 150°C (TJ) Package / Case: 24-PowerVDFN Supplier Device Package: TSON-24-3	封装: 24-PowerVDFN	库存7,664
BTS3408G	Infineon Technologies	IC SWITCH LOW SIDE DUAL 8DSO Switch Type: General Purpose Number of Outputs: 2 Ratio - Input:Output: 1:1 Output Configuration: Low Side Output Type: N-Channel Interface: On/Off Voltage - Load: 4.5 V ~ 60 V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 550mA Rds On (Typ): 480 mOhm Input Type: Non-Inverting Features: Auto Restart, Status Flag Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage Operating Temperature: -40°C ~ 150°C (TJ) Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: PG-DSO-8	封装: 8-SOIC (0.154", 3.90mm Width)	库存564,768
BTN7930PAKSA1	Infineon Technologies	IC MOTOR DRIVER PAR TO220-7 Motor Type - Stepper: - Motor Type - AC, DC: Brushed DC Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge Interface: Parallel Technology: Power MOSFET Step Resolution: - Applications: General Purpose Current - Output: 32A Voltage - Supply: 8 V ~ 18 V Voltage - Load: 8 V ~ 18 V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-7 (Formed Leads) Supplier Device Package: PG-TO220-7	封装: TO-220-7 (Formed Leads)	库存2,704
IRMCF371TY	Infineon Technologies	IC MOTOR CONTROLLR I2C/SPI 48QFP Motor Type - Stepper: - Motor Type - AC, DC: AC, Synchronous Function: Controller - Commutation, Direction Management Output Configuration: Pre-Driver - Half Bridge (3) Interface: I2C, RS-232, SPI Technology: IGBT Step Resolution: - Applications: Appliance Current - Output: - Voltage - Supply: 1.62 V ~ 1.98 V, 3 V ~ 3.6 V Voltage - Load: - Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-LQFP Supplier Device Package: 48-QFP (7x7)	封装: 48-LQFP	库存5,920
IR2127	Infineon Technologies	IC MOSFET DRIVER CUR-SENSE 8-DIP Driven Configuration: High-Side or Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 12 V ~ 20 V Logic Voltage - VIL, VIH: 0.8V, 3V Current - Peak Output (Source, Sink): 250mA, 500mA Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 80ns, 40ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-DIP	封装: 8-DIP (0.300", 7.62mm)	库存8,736
IR25606SPBF	Infineon Technologies	IC HALF BRIDGE DRIVER 8SOIC Driven Configuration: Half-Bridge Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10 V ~ 20 V Logic Voltage - VIL, VIH: 0.8V, 2.9V Current - Peak Output (Source, Sink): 200mA, 350mA Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 150ns, 50ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.154", 3.90mm Width)	库存5,520
TLE94112ELXUMA1	Infineon Technologies	IC DRIVER HALF-BRIDGE 24SSOP Output Configuration: Half Bridge (12) Applications: AC Motors, DC Motors, General Purpose Interface: SPI Load Type: Inductive Technology: Power MOSFET Rds On (Typ): 850 mOhm LS, 850 mOhm HS Current - Output / Channel: 500mA Current - Peak Output: 2A Voltage - Supply: 3 V ~ 5.5 V Voltage - Load: 5.5 V ~ 20 V Operating Temperature: -40°C ~ 150°C (TJ) Features: - Fault Protection: Over Temperature, Short Circuit, UVLO Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存6,576
TLE8110EDXUMA1	Infineon Technologies	IC LOW-SIDE SWITCH DSO36-72 Type: Low-Side Switch Applications: - Mounting Type: Surface Mount Package / Case: 36-BFSOP (0.295", 7.50mm Width) Exposed Pad Supplier Device Package: PG-DSO-36-72	封装: 36-BFSOP (0.295", 7.50mm Width) Exposed Pad	库存23,700
CY9AF156NAPMC-GE1	Infineon Technologies	MULTI-MARKET MCUS Core Processor: ARM® Cortex®-M3 Core Size: 32-Bit Speed: 40MHz Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Number of I/O: 83 Program Memory Size: 544KB (544K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 64K x 8 Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V Data Converters: A/D 24x12b Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-LQFP (14x14)	封装: -	Request a Quote
CY7C1361A-100BGC	Infineon Technologies	IC SRAM 9MBIT 100MHZ 119BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, SDR Memory Size: 9Mbit Memory Interface: Parallel Clock Frequency: 100 MHz Write Cycle Time - Word, Page: - Access Time: 8 ns Voltage - Supply: 3.135V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 119-BGA Supplier Device Package: 119-PBGA (14x22)	封装: -	Request a Quote
TZ400N24KOFHPSA1	Infineon Technologies	SCR MODULE 2.4KV 1050A MODULE Structure: Single Number of SCRs, Diodes: 1 SCR Voltage - Off State: 2.4 kV Current - On State (It (AV)) (Max): 670 A Current - On State (It (RMS)) (Max): 1050 A Voltage - Gate Trigger (Vgt) (Max): 2.2 V Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 13000A @ 50Hz Current - Hold (Ih) (Max): 300 mA Operating Temperature: -40°C ~ 125°C Mounting Type: Chassis Mount Package / Case: Module	封装: -	Request a Quote
BSM75GB120DLCHOSA1	Infineon Technologies	IGBT MOD 1200V 170A 690W IGBT Type: - Configuration: 2 Independent Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 170 A Power - Max: 690 W Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 125°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	封装: -	Request a Quote
IR3825MTRPBF	Infineon Technologies	IC REG BUCK CTRLR PQFN Function: - Output Configuration: - Topology: - Output Type: - Number of Outputs: - Voltage - Input (Min): - Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Current - Output: - Frequency - Switching: - Synchronous Rectifier: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote
IPP90R800C3XKSA2	Infineon Technologies	MOSFET N-CH 900V 6.9A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900 V Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 460µA Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 4.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	封装: -	库存1,470
AIMZH120R010M1TXKSA1	Infineon Technologies	SIC_DISCRETE FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 202A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Vgs(th) (Max) @ Id: 5.1V @ 30mA Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 5703 pF @ 800 V Vgs (Max): +23V, -5V FET Feature: - Power Dissipation (Max): 750W (Tc) Rds On (Max) @ Id, Vgs: 11.3mOhm @ 93A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-4-11 Package / Case: TO-247-4	封装: -	Request a Quote
S6J336CJTBSE20000	Infineon Technologies	TRAVEO-40NM Core Processor: ARM® Cortex®-R5F Core Size: 32-Bit Speed: 132MHz Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART Peripherals: DMA, I2S, LVD, POR, PWM, WDT Number of I/O: 126 Program Memory Size: 112KB (112K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 128K x 8 Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Data Converters: A/D 48x12b Oscillator Type: Internal Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 176-LQFP Exposed Pad Supplier Device Package: 176-TEQFP (24x24)	封装: -	库存1,191
IPG20N04S409AATMA1	Infineon Technologies	MOSFET 2N-CH 40V 20A 8TDSON FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 8.6mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 4V @ 22µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V Power - Max: 54W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-4	封装: -	库存15,000
BSC152N15LS5ATMA1	Infineon Technologies	TRENCH >=100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 60µA Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 96W (Tc) Rds On (Max) @ Id, Vgs: 15.2mOhm @ 29A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	封装: -	库存11,970
IPB80P04P4L08ATMA2	Infineon Technologies	MOSFET P-CH 40V 80A TO263-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 120µA Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V Vgs (Max): +5V, -16V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 8.2mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封装: -	库存5,988

IHW15T120FKSA1

Infineon Technologies

IGBT 1200V 30A 113W TO247-3

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 30A
Current - Collector Pulsed (Icm): 45A
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Power - Max: 113W
Switching Energy: 2.7mJ
Input Type: Standard
Gate Charge: 85nC
Td (on/off) @ 25°C: 50ns/520ns
Test Condition: 600V, 15A, 56 Ohm, 15V
Reverse Recovery Time (trr): 140ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3

封装: TO-247-3

库存4,928

IRGP4790D-EPBF

Infineon Technologies

IGBT 650V TO-247

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 140A
Current - Collector Pulsed (Icm): 225A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Power - Max: 455W
Switching Energy: 2.5mJ (on), 2.2mJ (off)
Input Type: Standard
Gate Charge: 210nC
Td (on/off) @ 25°C: 50ns/200ns
Test Condition: 400V, 75A, 10 Ohm, 15V
Reverse Recovery Time (trr): 170ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD

封装: TO-247-3

库存3,440

IPU60R2K0C6BKMA1

Infineon Technologies

MOSFET N-CH 600V 2.4A TO-251

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 22.3W (Tc)
Rds On (Max) @ Id, Vgs: 2 Ohm @ 760mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO251-3
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

封装: TO-251-3 Short Leads, IPak, TO-251AA

库存2,928

IPB65R095C7ATMA1

Infineon Technologies

MOSFET N-CH TO263-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 590µA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2140pF @ 400V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 128W (Tc)
Rds On (Max) @ Id, Vgs: 95 mOhm @ 11.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存7,888

IPP80N06S209AKSA2

Infineon Technologies

MOSFET N-CH 55V 80A TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 125µA
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2360pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3

封装: TO-220-3

库存16,752

IPD90P03P404ATMA1

Infineon Technologies

MOSFET P-CH 30V 90A TO252-3

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 253µA
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 137W (Tc)
Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 90A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存615,552

BF1009SE6327HTSA1

Infineon Technologies

MOSFET N-CH 12V 25MA SOT-143

Transistor Type: N-Channel
Frequency: 800MHz
Gain: 22dB
Voltage - Test: 9V
Current Rating: 25mA
Noise Figure: 1.4dB
Current - Test: -
Power - Output: -
Voltage - Rated: 12V
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: PG-SOT143-4

封装: TO-253-4, TO-253AA

库存7,872

BC 846B E6433

Infineon Technologies

TRANS NPN 65V 0.1A SOT-23

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 330mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

封装: TO-236-3, SC-59, SOT-23-3

库存3,552

BBY5202WH6327XTSA1

Infineon Technologies

DIODE TUNING 7V 20MA SCD80

Capacitance @ Vr, F: 1.45pF @ 4V, 1MHz
Capacitance Ratio: 2.1
Capacitance Ratio Condition: C1/C4
Voltage - Peak Reverse (Max): 7V
Diode Type: Single
Q @ Vr, F: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-80
Supplier Device Package: PG-SCD80-2

封装: SC-80

库存5,680

IDD08SG60CXTMA1

Infineon Technologies

DIODE SCHOTTKY 600V 8A TO252-3

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 8A (DC)
Voltage - Forward (Vf) (Max) @ If: 2.1V @ 8A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 70µA @ 600V
Capacitance @ Vr, F: 240pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存6,192

21-0065PBF

Infineon Technologies

IC REG BUCK ADJ 25A SYNC LGA

Function: Step-Down
Output Configuration: Positive
Topology: Buck
Output Type: Adjustable
Number of Outputs: 1
Voltage - Input (Min): 1.5V
Voltage - Input (Max): 16V
Voltage - Output (Min/Fixed): 0.6V
Voltage - Output (Max): 12V
Current - Output: 25A
Frequency - Switching: 225kHz ~ 1.65MHz
Synchronous Rectifier: Yes
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 17-LLGA
Supplier Device Package: 17-LGA (7.65x7.65)

封装: 17-LLGA

库存2,000

BTS54040LBEAUMA1

Infineon Technologies

IC PWR SWITCH HISIDE PG-TSON-24

Switch Type: General Purpose
Number of Outputs: 4
Ratio - Input:Output: 1:2
Output Configuration: High Side
Output Type: N-Channel
Interface: SPI
Voltage - Load: 5.5 V ~ 28 V
Voltage - Supply (Vcc/Vdd): 3.8 V ~ 5.5 V
Current - Output (Max): 2A
Rds On (Typ): 39 mOhm
Input Type: -
Features: -
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Operating Temperature: -40°C ~ 150°C (TJ)
Package / Case: 24-PowerVDFN
Supplier Device Package: TSON-24-3

封装: 24-PowerVDFN

库存7,664

BTS3408G

Infineon Technologies

IC SWITCH LOW SIDE DUAL 8DSO

Switch Type: General Purpose
Number of Outputs: 2
Ratio - Input:Output: 1:1
Output Configuration: Low Side
Output Type: N-Channel
Interface: On/Off
Voltage - Load: 4.5 V ~ 60 V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 550mA
Rds On (Typ): 480 mOhm
Input Type: Non-Inverting
Features: Auto Restart, Status Flag
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Operating Temperature: -40°C ~ 150°C (TJ)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: PG-DSO-8

封装: 8-SOIC (0.154", 3.90mm Width)

库存564,768

BTN7930PAKSA1

Infineon Technologies

IC MOTOR DRIVER PAR TO220-7

Motor Type - Stepper: -
Motor Type - AC, DC: Brushed DC
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge
Interface: Parallel
Technology: Power MOSFET
Step Resolution: -
Applications: General Purpose
Current - Output: 32A
Voltage - Supply: 8 V ~ 18 V
Voltage - Load: 8 V ~ 18 V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-7 (Formed Leads)
Supplier Device Package: PG-TO220-7

封装: TO-220-7 (Formed Leads)

库存2,704

IRMCF371TY

Infineon Technologies

IC MOTOR CONTROLLR I2C/SPI 48QFP

Motor Type - Stepper: -
Motor Type - AC, DC: AC, Synchronous
Function: Controller - Commutation, Direction Management
Output Configuration: Pre-Driver - Half Bridge (3)
Interface: I2C, RS-232, SPI
Technology: IGBT
Step Resolution: -
Applications: Appliance
Current - Output: -
Voltage - Supply: 1.62 V ~ 1.98 V, 3 V ~ 3.6 V
Voltage - Load: -
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Supplier Device Package: 48-QFP (7x7)

封装: 48-LQFP

库存5,920

IR2127

Infineon Technologies

IC MOSFET DRIVER CUR-SENSE 8-DIP

Driven Configuration: High-Side or Low-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 12 V ~ 20 V
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 250mA, 500mA
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600V
Rise / Fall Time (Typ): 80ns, 40ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-DIP

封装: 8-DIP (0.300", 7.62mm)

库存8,736

IR25606SPBF

Infineon Technologies

IC HALF BRIDGE DRIVER 8SOIC

Driven Configuration: Half-Bridge
Channel Type: Independent
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 10 V ~ 20 V
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600V
Rise / Fall Time (Typ): 150ns, 50ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

库存5,520

TLE94112ELXUMA1

Infineon Technologies

IC DRIVER HALF-BRIDGE 24SSOP

Output Configuration: Half Bridge (12)
Applications: AC Motors, DC Motors, General Purpose
Interface: SPI
Load Type: Inductive
Technology: Power MOSFET
Rds On (Typ): 850 mOhm LS, 850 mOhm HS
Current - Output / Channel: 500mA
Current - Peak Output: 2A
Voltage - Supply: 3 V ~ 5.5 V
Voltage - Load: 5.5 V ~ 20 V
Operating Temperature: -40°C ~ 150°C (TJ)
Features: -
Fault Protection: Over Temperature, Short Circuit, UVLO
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存6,576

TLE8110EDXUMA1

Infineon Technologies

IC LOW-SIDE SWITCH DSO36-72

Type: Low-Side Switch
Applications: -
Mounting Type: Surface Mount
Package / Case: 36-BFSOP (0.295", 7.50mm Width) Exposed Pad
Supplier Device Package: PG-DSO-36-72

封装: 36-BFSOP (0.295", 7.50mm Width) Exposed Pad

库存23,700

CY9AF156NAPMC-GE1

Infineon Technologies

MULTI-MARKET MCUS

Core Processor: ARM® Cortex®-M3
Core Size: 32-Bit
Speed: 40MHz
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Number of I/O: 83
Program Memory Size: 544KB (544K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 64K x 8
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Data Converters: A/D 24x12b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-LQFP (14x14)

封装: -

Request a Quote

CY7C1361A-100BGC

Infineon Technologies

IC SRAM 9MBIT 100MHZ 119BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, SDR
Memory Size: 9Mbit
Memory Interface: Parallel
Clock Frequency: 100 MHz
Write Cycle Time - Word, Page: -
Access Time: 8 ns
Voltage - Supply: 3.135V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 119-BGA
Supplier Device Package: 119-PBGA (14x22)

封装: -

Request a Quote

TZ400N24KOFHPSA1

Infineon Technologies

SCR MODULE 2.4KV 1050A MODULE

Structure: Single
Number of SCRs, Diodes: 1 SCR
Voltage - Off State: 2.4 kV
Current - On State (It (AV)) (Max): 670 A
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 13000A @ 50Hz
Current - Hold (Ih) (Max): 300 mA
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module

封装: -

Request a Quote

BSM75GB120DLCHOSA1

Infineon Technologies

IGBT MOD 1200V 170A 690W

IGBT Type: -
Configuration: 2 Independent
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 170 A
Power - Max: 690 W
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

封装: -

Request a Quote

IR3825MTRPBF

Infineon Technologies

IC REG BUCK CTRLR PQFN

Function: -
Output Configuration: -
Topology: -
Output Type: -
Number of Outputs: -
Voltage - Input (Min): -
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Current - Output: -
Frequency - Switching: -
Synchronous Rectifier: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

IPP90R800C3XKSA2

Infineon Technologies

MOSFET N-CH 900V 6.9A TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900 V
Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 460µA
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4.1A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3

封装: -

库存1,470

AIMZH120R010M1TXKSA1

Infineon Technologies

SIC_DISCRETE

FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 202A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs(th) (Max) @ Id: 5.1V @ 30mA
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 5703 pF @ 800 V
Vgs (Max): +23V, -5V
FET Feature: -
Power Dissipation (Max): 750W (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 93A, 20V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-4-11
Package / Case: TO-247-4

封装: -

Request a Quote

S6J336CJTBSE20000

Infineon Technologies

TRAVEO-40NM

Core Processor: ARM® Cortex®-R5F
Core Size: 32-Bit
Speed: 132MHz
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Number of I/O: 126
Program Memory Size: 112KB (112K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 128K x 8
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Data Converters: A/D 48x12b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 176-LQFP Exposed Pad
Supplier Device Package: 176-TEQFP (24x24)

封装: -

库存1,191

IPG20N04S409AATMA1

Infineon Technologies

MOSFET 2N-CH 40V 20A 8TDSON

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 4V @ 22µA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
Power - Max: 54W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-4

封装: -

库存15,000

BSC152N15LS5ATMA1

Infineon Technologies

TRENCH >=100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 60µA
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 75 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Rds On (Max) @ Id, Vgs: 15.2mOhm @ 29A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8
Package / Case: 8-PowerTDFN

封装: -

库存11,970

IPB80P04P4L08ATMA2

Infineon Technologies

MOSFET P-CH 40V 80A TO263-3

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 120µA
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
Vgs (Max): +5V, -16V
FET Feature: -
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 80A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3-2
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封装: -

库存5,988