Infineon Technologies 产品

SGW20N60FKSA1

Infineon Technologies

IGBT 600V 40A 179W TO247-3

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 40A
• Current - Collector Pulsed (Icm): 80A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
• Power - Max: 179W
• Switching Energy: 440µJ (on), 330µJ (off)
• Input Type: Standard
• Gate Charge: 100nC
• Td (on/off) @ 25°C: 36ns/225ns
• Test Condition: 400V, 20A, 16 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3

封装: TO-247-3

IRL3102STRLPBF

Infineon Technologies

MOSFET N-CH 20V 61A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
• Vgs(th) (Max) @ Id: 700mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 58nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 15V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 89W (Tc)
• Rds On (Max) @ Id, Vgs: 13 mOhm @ 37A, 7V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRFR3504TRRPBF

Infineon Technologies

MOSFET N-CH 40V 30A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 140W (Tc)
• Rds On (Max) @ Id, Vgs: 9.2 mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

SPP80N08S2-07

Infineon Technologies

MOSFET N-CH 75V 80A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6130pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 7.4 mOhm @ 66A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3-1
• Package / Case: TO-220-3

封装: TO-220-3

IPP050N06N G

Infineon Technologies

MOSFET N-CH 60V 100A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 270µA
• Gate Charge (Qg) (Max) @ Vgs: 167nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 30V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 5 mOhm @ 100A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO-220-3
• Package / Case: TO-220-3

封装: TO-220-3

BSP373 E6327

Infineon Technologies

MOSFET N-CH 100V 1.7A SOT-223

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.8W (Ta)
• Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.7A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-SOT223-4
• Package / Case: TO-261-4, TO-261AA

封装: TO-261-4, TO-261AA

IRLU7821

Infineon Technologies

MOSFET N-CH 30V 65A I-PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 75W (Tc)
• Rds On (Max) @ Id, Vgs: 10 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: I-Pak
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

封装: TO-251-3 Short Leads, IPak, TO-251AA

IRF1010EL

Infineon Technologies

MOSFET N-CH 60V 84A TO-262

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3210pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 200W (Tc)
• Rds On (Max) @ Id, Vgs: 12 mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-262
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

封装: TO-262-3 Long Leads, I2Pak, TO-262AA

IRFB5620PBF

Infineon Technologies

MOSFET N-CH 200V 25A TO-220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 144W (Tc)
• Rds On (Max) @ Id, Vgs: 72.5 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

封装: TO-220-3

IPP041N04NGXKSA1

Infineon Technologies

MOSFET N-CH 40V 80A TO220-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 45µA
• Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 20V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 94W (Tc)
• Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 80A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3-1
• Package / Case: TO-220-3

封装: TO-220-3

IRFR13N15DPBF

Infineon Technologies

MOSFET N-CH 150V 14A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150V
• Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 86W (Tc)
• Rds On (Max) @ Id, Vgs: 180 mOhm @ 8.3A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

BG5120KE6327HTSA1

Infineon Technologies

MOSFET N-CH DUAL 8V 20MA SOT-363

• Transistor Type: 2 N-Channel (Dual)
• Frequency: 800MHz
• Gain: 23dB
• Voltage - Test: 5V
• Current Rating: 20mA
• Noise Figure: 1.1dB
• Current - Test: 10mA
• Power - Output: -
• Voltage - Rated: 8V
• Package / Case: 6-VSSOP, SC-88, SOT-363
• Supplier Device Package: PG-SOT363-6

封装: 6-VSSOP, SC-88, SOT-363

BAS1602WH6327XTSA1

Infineon Technologies

DIODE GEN PURP 80V 200MA SCD80-2

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 80V
• Current - Average Rectified (Io): 200mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4ns
• Current - Reverse Leakage @ Vr: 1µA @ 75V
• Capacitance @ Vr, F: 2pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-80
• Supplier Device Package: PG-SCD80-2
• Operating Temperature - Junction: 150°C (Max)

封装: SC-80

XMC4300F100F256AAXQMA1

Infineon Technologies

IC MCU 32BIT 256KB FLASH 100LQFP

• Core Processor: ARM? Cortex?-M4
• Core Size: 32-Bit
• Speed: 144MHz
• Connectivity: CAN, Ethernet, I2C, LIN, MMC/SD, SPI, UART/USART, USB OTG, USIC
• Peripherals: DMA, I2S, LED, POR, Touch-Sense, WDT
• Number of I/O: 73
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 128K x 8
• Voltage - Supply (Vcc/Vdd): 3.13 V ~ 3.63 V
• Data Converters: A/D 16x12b, D/A 2x12b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: 100-LQFP Exposed Pad
• Supplier Device Package: PG-LQFP-100-25

封装: 100-LQFP Exposed Pad

TLE49612MXTMA1

Infineon Technologies

IC HALL EFFECT LATCH SOT23-3

• Function: -
• Technology: -
• Polarization: -
• Sensing Range: -
• Test Condition: -
• Voltage - Supply: -
• Current - Supply (Max): -
• Current - Output (Max): -
• Output Type: -
• Features: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

封装: -

PVD1354N

Infineon Technologies

IC RELAY PHOTOVO 100V 550MA 8DIP

• Circuit: SPST-NO (1 Form A)
• Output Type: DC
• On-State Resistance (Max): 1.5 Ohm
• Load Current: 550mA
• Voltage - Input: 1.2VDC
• Voltage - Load: 0 ~ 100 V
• Mounting Type: Through Hole
• Termination Style: PC Pin
• Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
• Supplier Device Package: 8-DIP Modified
• Relay Type: Relay

封装: 8-DIP (0.300", 7.62mm), 4 Leads

PVT322S-T

Infineon Technologies

IC RELAY PHOTOVO 250V 170MA 8SMD

• Circuit: DPST (2 Form A)
• Output Type: AC, DC
• On-State Resistance (Max): 10 Ohm
• Load Current: 170mA
• Voltage - Input: 1.2VDC
• Voltage - Load: 0 ~ 250 V
• Mounting Type: Surface Mount
• Termination Style: Gull Wing
• Package / Case: 8-SMD (0.300", 7.62mm)
• Supplier Device Package: 8-SMT
• Relay Type: Relay

封装: 8-SMD (0.300", 7.62mm)

BTS500551TMCATMA1

Infineon Technologies

IC SWITCH PWR HISIDE TO220-7

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 5 V ~ 34 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 55A
• Rds On (Typ): 4.4 mOhm
• Input Type: Non-Inverting
• Features: Auto Restart
• Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
• Supplier Device Package: PG-TO220-7

封装: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

CY8C4148AZAS565XQLA1

Infineon Technologies

PSOC4 - GENERAL

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 48MHz
• Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, DMA, LCD, LVD, POR, PWM, WDT
• Number of I/O: 54
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 32K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LQFP
• Supplier Device Package: 64-TQFP (10x10)

封装: -

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CY7C6522324LQXSTXUMA1

Infineon Technologies

USB-DATA

• Protocol: -
• Function: -
• Interface: -
• Standards: -
• Voltage - Supply: -
• Current - Supply: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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TT104N12KOFHPSA1

Infineon Technologies

SCR MODULE 1.2KV 160A MODULE

• Structure: Series Connection - All SCRs
• Number of SCRs, Diodes: 2 SCRs
• Voltage - Off State: 1.2 kV
• Current - On State (It (AV)) (Max): 104 A
• Current - On State (It (RMS)) (Max): 160 A
• Voltage - Gate Trigger (Vgt) (Max): 1.4 V
• Current - Gate Trigger (Igt) (Max): 120 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
• Current - Hold (Ih) (Max): 200 mA
• Operating Temperature: -40°C ~ 140°C
• Mounting Type: Chassis Mount
• Package / Case: Module

封装: -

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FP35R12W2T7PBPSA1

Infineon Technologies

LOW POWER EASY

• IGBT Type: Trench Field Stop
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 35 A
• Power - Max: 20 mW
• Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 35A
• Current - Collector Cutoff (Max): 5.8 µA
• Input Capacitance (Cies) @ Vce: 6.62 nF @ 25 V
• Input: Three Phase Bridge Rectifier
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-EASY2B

封装: -

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CYAT817AZS88-52002

Infineon Technologies

PSOC BASED - TRUETOUCH

• Touchscreen: 2 Wire Capacitive
• Resolution (Bits): -
• Interface: I2C, SPI
• Voltage Reference: -
• Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
• Current - Supply: -
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 128-LQFP
• Supplier Device Package: 128-TQFP (14x20)

封装: -

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CYUSB3017-BZXC

Infineon Technologies

USB SuperSpeed Peripherals

• Applications: SuperSpeed USB Peripheral Controller
• Core Processor: ARM926EJ-S
• Program Memory Type: External Program Memory
• Controller Series: CYUSB
• RAM Size: 512K x 8
• Interface: I2C, SPI, UART, USB
• Number of I/O: 7
• Voltage - Supply: 1.15V ~ 1.25V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 121-TFBGA
• Supplier Device Package: 121-FBGA (10x10)

封装: -

ASP1000C-I16T

Infineon Technologies

IC REG BUCK 56VQFN

• Applications: -
• Voltage - Input: -
• Number of Outputs: -
• Voltage - Output: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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IRFHM9331TR2PBF

Infineon Technologies

MOSFET P-CH 30V 11A 3X3 PQFN

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 24A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 2.4V @ 25µA
• Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1543 pF @ 25 V
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 10mOhm @ 11A, 20V
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: PQFN (3x3)
• Package / Case: 8-PowerTDFN

封装: -

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S25FS128SDSNFM100

Infineon Technologies

IC FLASH 128MBIT SPI/QUAD 8WSON

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR (SLC)
• Memory Size: 128Mbit
• Memory Interface: SPI - Quad I/O, QPI
• Clock Frequency: 80 MHz
• Write Cycle Time - Word, Page: 2ms
• Access Time: 6 ns
• Voltage - Supply: 1.7V ~ 2V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-WDFN Exposed Pad
• Supplier Device Package: 8-WSON (5x6)

封装: -

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CYAT81685-100AA61Z

Infineon Technologies

PSOC BASED - TRUETOUCH

• Touchscreen: 2 Wire Capacitive
• Resolution (Bits): -
• Interface: I2C, SPI
• Voltage Reference: -
• Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
• Current - Supply: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-TQFP (14x14)

封装: -

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CG7480AT

Infineon Technologies

IC SRAM 8MBIT PARALLEL 44TSOP II

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM
• Memory Size: 8Mbit
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 15ns
• Access Time: 15 ns
• Voltage - Supply: 3V ~ 3.6V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 44-TSOP (0.400", 10.16mm Width)
• Supplier Device Package: 44-TSOP II

封装: -

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PEB22716TV1-5

Infineon Technologies

GEMINAX MULTIPORT INTEGRATED AD

• Logic Type: -
• Number of Elements: -
• Number of Bits per Element: -
• Input Type: -
• Output Type: -
• Current - Output High, Low: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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