页 117 - Infineon Technologies 产品 | 深圳黑森尔电子
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Infineon Technologies 产品

记录 16,988
页  117/567
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IRGC4067B
Infineon Technologies

IGBT CHIP WAFER

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 120A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 240nC
  • Td (on/off) @ 25°C: 50ns/160ns
  • Test Condition: 400V, 120A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: Die
库存7,696
IPD50R950CEATMA1
Infineon Technologies

MOSFET N-CH 500V 4.3A PG-T0252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 13V
  • Vgs(th) (Max) @ Id: 3.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 231pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 53W (Tc)
  • Rds On (Max) @ Id, Vgs: 950 mOhm @ 1.2A, 13V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存2,704
IPP90N06S404AKSA1
Infineon Technologies

MOSFET N-CH 60V 90A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 90µA
  • Gate Charge (Qg) (Max) @ Vgs: 128nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10400pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 4 mOhm @ 90A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-1
  • Package / Case: TO-220-3
封装: TO-220-3
库存3,296
hot IRF3709ZCS
Infineon Technologies

MOSFET N-CH 30V 87A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2130pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 79W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 21A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存390,000
IRLMS2002
Infineon Technologies

MOSFET N-CH 20V 6.5A TSOP-6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 6.5A, 4.5V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: Micro6?(SOT23-6)
  • Package / Case: SOT-23-6
封装: SOT-23-6
库存5,808
IRFR4105PBF
Infineon Technologies

MOSFET N-CH 55V 27A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 68W (Tc)
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 16A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存2,304
hot SPA07N60C3
Infineon Technologies

MOSFET N-CH 650V 7.3A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 32W (Tc)
  • Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-FP
  • Package / Case: TO-220-3 Full Pack
封装: TO-220-3 Full Pack
库存579,120
hot IRF1404ZPBF
Infineon Technologies

MOSFET N-CH 40V 75A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4340pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封装: TO-220-3
库存89,208
BC858CE6433HTMA1
Infineon Technologies

TRANS PNP 30V 0.1A SOT-23

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
  • Power - Max: 330mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
封装: TO-236-3, SC-59, SOT-23-3
库存2,464
BCR 141F E6327
Infineon Technologies

TRANS PREBIAS NPN 250MW TSFP-3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 130MHz
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: PG-TSFP-3
封装: SOT-723
库存5,360
BAT1504WE6327BTSA1
Infineon Technologies

DIODE SCHOTTKY 4V 110MA SOT-323

  • Diode Type: Schottky - 1 Pair Series Connection
  • Voltage - Peak Reverse (Max): 4V
  • Current - Max: 110mA
  • Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
  • Resistance @ If, F: -
  • Power Dissipation (Max): 100mW
  • Operating Temperature: 150°C (TJ)
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
封装: SC-70, SOT-323
库存5,312
BAS40E6433HTMA1
Infineon Technologies

DIODE SCHOTTKY 40V 120MA SOT23-3

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 120mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 40mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 100ps
  • Current - Reverse Leakage @ Vr: 1µA @ 30V
  • Capacitance @ Vr, F: 5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: TO-236-3, SC-59, SOT-23-3
库存7,152
BAT6307WE6327HTSA1
Infineon Technologies

DIODE ARRAY SCHOTTKY 3V SOT343

  • Diode Configuration: 2 Independent
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 3V
  • Current - Average Rectified (Io) (per Diode): 100mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 300mV @ 1mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 3V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
封装: SC-82A, SOT-343
库存6,080
TLE4296GV30NTSA1
Infineon Technologies

IC REG LINEAR 30MA SCT595-5

  • Output Configuration: -
  • Output Type: -
  • Number of Regulators: 1
  • Voltage - Input (Max): -
  • Voltage - Output (Min/Fixed): -
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: 30mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: -
  • Protection Features: -
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD (5 Leads), Gull Wing
  • Supplier Device Package: PG-SCT595-5
封装: 6-SMD (5 Leads), Gull Wing
库存7,952
IFX25001TF V33
Infineon Technologies

IC REG LINEAR 3.3V 400MA TO252-3

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 40V
  • Voltage - Output (Min/Fixed): 3.3V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 1.2V @ 300mA
  • Current - Output: 400mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 220µA ~ 30mA
  • PSRR: 60dB (100Hz)
  • Control Features: -
  • Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存25,440
BTS6480SFXUMA1
Infineon Technologies

IC SW SMART HI SIDE 4CH DSO36-43

  • Switch Type: General Purpose
  • Number of Outputs: 4
  • Ratio - Input:Output: 3:4
  • Output Configuration: High Side
  • Output Type: N-Channel
  • Interface: SPI
  • Voltage - Load: 4.5 V ~ 28 V
  • Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
  • Current - Output (Max): -
  • Rds On (Typ): 3.5 mOhm, 11 mOhm
  • Input Type: -
  • Features: Auto Restart
  • Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: 36-BSSOP (0.295", 7.50mm Width)
  • Supplier Device Package: PG-DSO-36-43
封装: 36-BSSOP (0.295", 7.50mm Width)
库存5,824
AUIPS7142GTR
Infineon Technologies

IC SW IPS 2CH HIGH SIDE 16SOIC

  • Switch Type: General Purpose
  • Number of Outputs: 2
  • Ratio - Input:Output: 1:1
  • Output Configuration: High Side
  • Output Type: N-Channel
  • Interface: On/Off
  • Voltage - Load: 60V (Max)
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 1.5A
  • Rds On (Typ): 75 mOhm
  • Input Type: Non-Inverting
  • Features: -
  • Fault Protection: Current Limiting (Fixed), Over Temperature
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOIC
封装: 16-SOIC (0.295", 7.50mm Width)
库存3,376
TLE7189FXUMA2
Infineon Technologies

IC MOTOR CONTROLLER PAR 48VQFN

  • Motor Type - Stepper: -
  • Motor Type - AC, DC: Brushless DC (BLDC), Brushed DC
  • Function: Controller - Commutation, Direction Management
  • Output Configuration: Pre-Driver - Half Bridge (3)
  • Interface: Parallel
  • Technology: Power MOSFET
  • Step Resolution: -
  • Applications: Automotive
  • Current - Output: -
  • Voltage - Supply: 5.5 V ~ 28 V
  • Voltage - Load: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 48-VFQFN Exposed Pad
  • Supplier Device Package: PG-VQFN-48-72
封装: 48-VFQFN Exposed Pad
库存3,632
hot IRS2552DPBF
Infineon Technologies

IC CTLR BALLAST CCFL/EEFL 16-DIP

  • Type: CCFL/EEFL Controller
  • Frequency: 39kHz ~ 69kHz
  • Voltage - Supply: 11.5 V ~ 16.6 V
  • Current - Supply: 10mA
  • Current - Output Source/Sink: -
  • Dimming: Yes
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Through Hole
  • Package / Case: 16-DIP (0.300", 7.62mm)
  • Supplier Device Package: 16-DIP
封装: 16-DIP (0.300", 7.62mm)
库存90,180
IRS2330STRPBF
Infineon Technologies

IC DVR 3-PHASE BRIDGE 28SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: 3-Phase
  • Number of Drivers: 6
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.2V
  • Current - Peak Output (Source, Sink): 250mA, 500mA
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 80ns, 35ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 28-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 28-SOIC
封装: 28-SOIC (0.295", 7.50mm Width)
库存6,400
IR3579MTRPBF
Infineon Technologies

IC REG BUCK SYNC ADJ 32PQFN

  • Output Configuration: -
  • Applications: Synchronous Buck Converters, Voltage Regulators
  • Interface: PWM
  • Load Type: Inductive
  • Technology: -
  • Rds On (Typ): -
  • Current - Output / Channel: 60A
  • Current - Peak Output: -
  • Voltage - Supply: 4.5 V ~ 7 V
  • Voltage - Load: 4.5 V ~ 15 V
  • Operating Temperature: -
  • Features: Diode Emulation, Status Flag
  • Fault Protection: Current Limiting, Over Temperature, Over Voltage, UVLO
  • Mounting Type: Surface Mount
  • Package / Case: 30-PowerVFQFN
  • Supplier Device Package: 30-PQFN (6x6)
封装: 30-PowerVFQFN
库存2,896
SLB9665XT20FW560XUMA2
Infineon Technologies

SECURITY IC'S/AUTHENTICATION IC'

  • Applications: Embedded Security Trusted Computing
  • Core Processor: 16-Bit
  • Program Memory Type: -
  • Controller Series: -
  • RAM Size: -
  • Interface: LPC
  • Number of I/O: 1
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 28-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: PG-TSSOP-28-2
封装: 28-TSSOP (0.173", 4.40mm Width)
库存3,920
PX7241HING008XTMA1
Infineon Technologies

IC CONTROLLER

  • Applications: -
  • Voltage - Input: -
  • Number of Outputs: -
  • Voltage - Output: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存3,600
S29CD016J0PQFM110
Infineon Technologies

IC FLASH 16MBIT PARALLEL 80PQFP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 16Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 66 MHz
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 54 ns
  • Voltage - Supply: 1.65V ~ 2.75V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 80-BQFP
  • Supplier Device Package: 80-PQFP (14x20)
封装: -
Request a Quote
IPL65R065CFD7AUMA1
Infineon Technologies

HIGH POWER_NEW

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 860µA
  • Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 195W (Tc)
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 16.4A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-VSON-4-1
  • Package / Case: 4-PowerTSFN
封装: -
Request a Quote
CYT4BBBCEBQ0BZSGS
Infineon Technologies

IC MCU 32BT 4.0625MB FLSH 272BGA

  • Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
  • Core Size: 32-Bit Quad-Core
  • Speed: 100MHz, 250MHz
  • Connectivity: CANbus, Ethernet, I2C, LINbus, eMMC/SD, SPI, UART/USART
  • Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, WDT
  • Number of I/O: 220
  • Program Memory Size: 4.0625MB (4.0625M x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: 256K x 8
  • RAM Size: 768K x 8
  • Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
  • Data Converters: A/D 90x12b SAR
  • Oscillator Type: External, Internal
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 272-LFBGA
  • Supplier Device Package: 272-BGA (16x16)
封装: -
Request a Quote
IMW65R020M2HXKSA1
Infineon Technologies

SILICON CARBIDE MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
Request a Quote
S29GL256N11FFI023
Infineon Technologies

IC FLASH 256MBIT PARALLEL 64FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 256Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 110ns
  • Access Time: 110 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LBGA
  • Supplier Device Package: 64-FBGA (13x11)
封装: -
Request a Quote
S25FL512SAGBHEA10
Infineon Technologies

IC FLASH 512MBIT SPI/QUAD 24BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 512Mbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -55°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-BGA (8x6)
封装: -
Request a Quote
IMW65R072M1HXKSA1
Infineon Technologies

MOSFET 650V NCH SIC TRENCH

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5.7V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 744 pF @ 400 V
  • Vgs (Max): +23V, -5V
  • FET Feature: -
  • Power Dissipation (Max): 96W (Tc)
  • Rds On (Max) @ Id, Vgs: 94mOhm @ 13.3A, 18V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-3-41
  • Package / Case: TO-247-3
封装: -
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