|
|
Vishay Siliconix |
JFET P-CH 30V TO-18
- FET Type: -
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): -
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-206AA (TO-18)
|
封装: TO-206AA, TO-18-3 Metal Can |
库存3,744 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 50V 1.5MA TO-206AA
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 50V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 500µA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 600mV @ 100nA
- Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
- Resistance - RDS(On): -
- Power - Max: 300mW
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-206AA (TO-18)
|
封装: TO-206AA, TO-18-3 Metal Can |
库存6,176 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 50V 1.5MA TO-206AA
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 50V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 500µA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 600mV @ 100nA
- Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
- Resistance - RDS(On): -
- Power - Max: 300mW
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-206AA (TO-18)
|
封装: TO-206AA, TO-18-3 Metal Can |
库存5,744 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 60V 60A POLARPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
- Rds On (Max) @ Id, Vgs: 7.4 mOhm @ 19.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 10-PolarPAK? (L)
- Package / Case: 10-PolarPAK? (L)
|
封装: 10-PolarPAK? (L) |
库存4,912 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 30V 8.8A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 800mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta)
- Rds On (Max) @ Id, Vgs: 12 mOhm @ 12.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存1,481,688 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 30V 60A PPAK SO-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2630pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 5W (Ta), 48W (Tc)
- Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
|
封装: PowerPAK? SO-8 |
库存5,952 |
|
|
|
Vishay Siliconix |
MOSFET P-CH 20V 3.8A 1206-8
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.25W (Ta)
- Rds On (Max) @ Id, Vgs: 62 mOhm @ 4A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 1206-8 ChipFET?
- Package / Case: 8-SMD, Flat Lead
|
封装: 8-SMD, Flat Lead |
库存310,752 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 60V 50A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 190W (Tc)
- Rds On (Max) @ Id, Vgs: 18 mOhm @ 43A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存6,496 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 200V 17A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 66nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
- Rds On (Max) @ Id, Vgs: 180 mOhm @ 10A, 5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存7,872 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 20V 40A PPAK SO-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6110pF @ 10V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
- Rds On (Max) @ Id, Vgs: 2.25 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
|
封装: PowerPAK? SO-8 |
库存16,476 |
|
|
|
Vishay Siliconix |
MOSFET P-CH 30V 1.7A SOT363
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 950mW (Ta)
- Rds On (Max) @ Id, Vgs: 200 mOhm @ 2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-70-6 (SOT-363)
- Package / Case: 6-TSSOP, SC-88, SOT-363
|
封装: 6-TSSOP, SC-88, SOT-363 |
库存6,224 |
|
|
|
Vishay Siliconix |
MOSFET N-CHAN 850V TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1670pF @ 100V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 179W (Tc)
- Rds On (Max) @ Id, Vgs: 440 mOhm @ 5.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
封装: TO-220-3 |
库存6,976 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 125V 60A SO8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 125V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1410pF @ 75V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 104W (Tc)
- Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
|
封装: PowerPAK? SO-8 |
库存4,864 |
|
|
|
Vishay Siliconix |
MOSFET P-CH 40V 55A SO8
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 68W (Tc)
- Rds On (Max) @ Id, Vgs: 14 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
|
封装: PowerPAK? SO-8 |
库存2,096 |
|
|
|
Vishay Siliconix |
MOSFET P-CH 20V 4A 1206-8
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 10V
- Vgs (Max): ±12V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 1.7W (Ta), 3.1W (Tc)
- Rds On (Max) @ Id, Vgs: 84 mOhm @ 3.7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 1206-8 ChipFET?
- Package / Case: 8-SMD, Flat Lead
|
封装: 8-SMD, Flat Lead |
库存480,012 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 80V 6.7A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.56W (Ta)
- Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存41,484 |
|
|
|
Vishay Siliconix |
MOSFET P-CH 20V 4.4A 1206-8
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.3W (Ta)
- Rds On (Max) @ Id, Vgs: 45 mOhm @ 4.4A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 1206-8 ChipFET?
- Package / Case: 8-SMD, Flat Lead
|
封装: 8-SMD, Flat Lead |
库存1,141,428 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 500V 16A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2760pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 220W (Tc)
- Rds On (Max) @ Id, Vgs: 320 mOhm @ 9.9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
封装: TO-220-3 |
库存24,000 |
|
|
|
Vishay Siliconix |
MOSFET P-CH 12V 16A 1212-8
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 115nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 6V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 3.6W (Ta), 33W (Tc)
- Rds On (Max) @ Id, Vgs: 13 mOhm @ 13.5A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? 1212-8
- Package / Case: PowerPAK? 1212-8
|
封装: PowerPAK? 1212-8 |
库存147,324 |
|
|
|
Vishay Siliconix |
MOSFET P-CH 30V 11.6A 8-SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 15V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
- Rds On (Max) @ Id, Vgs: 20.5 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存466,836 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 100V 60A PPAK SO-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2870pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
- Rds On (Max) @ Id, Vgs: 14 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
|
封装: PowerPAK? SO-8 |
库存768,012 |
|
|
|
Vishay Siliconix |
MOSFET 2P-CH 30V 8A PPAK SO-8
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8A
- Rds On (Max) @ Id, Vgs: 24 mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V
- Power - Max: 55W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK? SO-8 Dual
- Supplier Device Package: PowerPAK? SO-8 Dual
|
封装: PowerPAK? SO-8 Dual |
库存7,296 |
|
|
|
Vishay Siliconix |
MOSFET 2P-CH 8V 3A 1206-8
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 8V
- Current - Continuous Drain (Id) @ 25°C: 3A
- Rds On (Max) @ Id, Vgs: 90 mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 1206-8 ChipFET?
|
封装: 8-SMD, Flat Lead |
库存177,468 |
|
|
|
Vishay Siliconix |
MOSFET N/P-CH 12V 1.2A SC70-6
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 1.2A, 770mA
- Rds On (Max) @ Id, Vgs: 235 mOhm @ 1.2A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 470mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-70-6 (SOT-363)
|
封装: 6-TSSOP, SC-88, SOT-363 |
库存72,000 |
|
|
|
Vishay Siliconix |
MOSFET 2N-CH 30V 5.7A 8SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5.7A
- Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id: 800mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存2,096 |
|
|
|
Vishay Siliconix |
IC REG LIN POS ADJ 150MA SC70-5
- Output Configuration: Positive
- Output Type: Adjustable
- Number of Regulators: 1
- Voltage - Input (Max): 6V
- Voltage - Output (Min/Fixed): 1.2V
- Voltage - Output (Max): 5.78V
- Voltage Dropout (Max): 0.22V @ 150mA
- Current - Output: 150mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 85µA
- PSRR: 72dB ~ 38dB (1kHz ~ 100kHz)
- Control Features: Enable
- Protection Features: Over Temperature, Short Circuit
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 5-TSSOP, SC-70-5, SOT-353
- Supplier Device Package: SC-70-5
|
封装: 5-TSSOP, SC-70-5, SOT-353 |
库存7,440 |
|
|
|
Vishay Siliconix |
IC SWITCH HIGH SIDE N-CH WCSP4
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 0.9 V ~ 2.5 V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 1.2A
- Rds On (Typ): 54 mOhm
- Input Type: Non-Inverting
- Features: Load Discharge
- Fault Protection: Reverse Current
- Operating Temperature: -40°C ~ 125°C (TJ)
- Package / Case: 4-UFBGA, CSPBGA
- Supplier Device Package: 4-WCSP (0.79x0.79)
|
封装: 4-UFBGA, CSPBGA |
库存2,848 |
|
|
|
Vishay Siliconix |
IC SWITCH QUAD SPST 16TSSOP
- Switch Circuit: SPST - NC
- Multiplexer/Demultiplexer Circuit: 1:1
- Number of Circuits: 4
- On-State Resistance (Max): 30 Ohm
- Channel-to-Channel Matching (ΔRon): 100 mOhm
- Voltage - Supply, Single (V+): 2.7 V ~ 12 V
- Voltage - Supply, Dual (V±): ±3 V ~ 6 V
- Switch Time (Ton, Toff) (Max): 60ns, 35ns
- -3db Bandwidth: 280MHz
- Charge Injection: 5pC
- Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
- Current - Leakage (IS(off)) (Max): 1nA
- Crosstalk: -95dB @ 1MHz
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 16-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 16-TSSOP
|
封装: 16-TSSOP (0.173", 4.40mm Width) |
库存4,960 |
|
|
|
Vishay Siliconix |
IC SWITCH DUAL SPDT 10MICRO
- Switch Circuit: SPDT
- Multiplexer/Demultiplexer Circuit: 2:1
- Number of Circuits: 2
- On-State Resistance (Max): 2.9 Ohm
- Channel-to-Channel Matching (ΔRon): 250 mOhm (Max)
- Voltage - Supply, Single (V+): 1.8 V ~ 5.5 V
- Voltage - Supply, Dual (V±): -
- Switch Time (Ton, Toff) (Max): 45ns, 42ns
- -3db Bandwidth: 300MHz
- Charge Injection: 1pC
- Channel Capacitance (CS(off), CD(off)): 12pF
- Current - Leakage (IS(off)) (Max): 2nA
- Crosstalk: -78dB @ 1MHz
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 10-WFBGA
- Supplier Device Package: 10-Micro Foot? (4x3)
|
封装: 10-WFBGA |
库存4,720 |
|
|
|
Vishay Siliconix |
IC SWITCH CMOS 14DIP
- Switch Circuit: SPST - NO
- Multiplexer/Demultiplexer Circuit: 1:1
- Number of Circuits: 2
- On-State Resistance (Max): 50 Ohm
- Channel-to-Channel Matching (ΔRon): -
- Voltage - Supply, Single (V+): -
- Voltage - Supply, Dual (V±): ±15V
- Switch Time (Ton, Toff) (Max): 150ns, 130ns (Typ)
- -3db Bandwidth: -
- Charge Injection: 8pC
- Channel Capacitance (CS(off), CD(off)): 14pF, 14pF
- Current - Leakage (IS(off)) (Max): 5nA
- Crosstalk: -74dB @ 500kHz
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 14-DIP (0.300", 7.62mm)
- Supplier Device Package: 14-DIP
|
封装: 14-DIP (0.300", 7.62mm) |
库存2,464 |
|