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Vishay Siliconix |
MOSFET P-CH 20V 0.94A SC89-6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.86nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 308pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 236mW (Ta)
- Rds On (Max) @ Id, Vgs: 184 mOhm @ 940mA, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-89-6
- Package / Case: SOT-563, SOT-666
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封装: SOT-563, SOT-666 |
库存3,344 |
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Vishay Siliconix |
MOSFET N-CH 30V 38A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 68W (Tc)
- Rds On (Max) @ Id, Vgs: 26 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存6,128 |
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Vishay Siliconix |
MOSFET N-CH 60V 10A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
- Rds On (Max) @ Id, Vgs: 200 mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存6,224 |
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Vishay Siliconix |
MOSFET N-CH 800V 4.1A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 3 Ohm @ 2.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存3,408 |
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Vishay Siliconix |
MOSFET N-CH 75V 60A POLARPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 38V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
- Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 16A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 10-PolarPAK? (L)
- Package / Case: 10-PolarPAK? (L)
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封装: 10-PolarPAK? (L) |
库存7,360 |
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Vishay Siliconix |
MOSFET P-CH 30V 8-SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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封装: 8-SOIC (0.154", 3.90mm Width) |
库存18,792 |
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Vishay Siliconix |
MOSFET P-CH 30V 30A PPAK SO-8
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5170pF @ 15V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
- Rds On (Max) @ Id, Vgs: 7 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
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封装: PowerPAK? SO-8 |
库存4,160 |
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Vishay Siliconix |
MOSFET N-CH 60V 9.6A PPAK SO-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.9W (Ta)
- Rds On (Max) @ Id, Vgs: 11 mOhm @ 12A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
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封装: PowerPAK? SO-8 |
库存84,336 |
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Vishay Siliconix |
MOSFET N-CH 60V 200A POWERPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 10210pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 1.9 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? 8 x 8
- Package / Case: PowerPAK? 8 x 8 Single
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封装: PowerPAK? 8 x 8 Single |
库存3,952 |
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Vishay Siliconix |
MOSFET N-CH 12V 17A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta)
- Rds On (Max) @ Id, Vgs: 3 mOhm @ 25A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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封装: 8-SOIC (0.154", 3.90mm Width) |
库存180,876 |
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Vishay Siliconix |
MOSFET P-CH 100V 12A TO-220AB
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 88W (Tc)
- Rds On (Max) @ Id, Vgs: 300 mOhm @ 7.2A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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封装: TO-220-3 |
库存22,680 |
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Vishay Siliconix |
MOSFET P-CH 60V 19A TO252
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.7W (Ta), 46W (Tc)
- Rds On (Max) @ Id, Vgs: 60 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存187,896 |
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Vishay Siliconix |
MOSFET N-CH 60V 21.4A TO-252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 21.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 5.7W (Ta), 31.25W (Tc)
- Rds On (Max) @ Id, Vgs: 31 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存129,168 |
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Vishay Siliconix |
MOSFET N-CH 40V 5.6A SOT-23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
- Rds On (Max) @ Id, Vgs: 42 mOhm @ 4.3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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封装: TO-236-3, SC-59, SOT-23-3 |
库存936,408 |
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Vishay Siliconix |
MOSFET 2P-CH 20V 2.7A 1206-8
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2.7A
- Rds On (Max) @ Id, Vgs: 110 mOhm @ 2.7A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 1206-8 ChipFET?
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封装: 8-SMD, Flat Lead |
库存4,256 |
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Vishay Siliconix |
MOSFET 2N-CH 30V 9.3A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9.3A
- Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 12.2A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.3W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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封装: 8-SOIC (0.154", 3.90mm Width) |
库存2,256 |
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Vishay Siliconix |
MOSFET 2P-CH 20V 7.1A 8-SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 7.1A
- Rds On (Max) @ Id, Vgs: 15 mOhm @ 9.4A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 65nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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封装: 8-SOIC (0.154", 3.90mm Width) |
库存57,828 |
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Vishay Siliconix |
MOSFET 2N-CH 30V 8A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8A
- Rds On (Max) @ Id, Vgs: 16 mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 15V
- Power - Max: 3.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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封装: 8-SOIC (0.154", 3.90mm Width) |
库存29,328 |
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Vishay Siliconix |
MOSFET ARRAY 2N-CH 20V SC70-6
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
- Rds On (Max) @ Id, Vgs: 280 mOhm @ 1.2A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.15nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V
- Power - Max: 1.5W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-70-6
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封装: 6-TSSOP, SC-88, SOT-363 |
库存6,480 |
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Vishay Siliconix |
MOSFET N/P-CH 12V/20V SC-70-6L
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 12V, 20V
- Current - Continuous Drain (Id) @ 25°C: 4.5A
- Rds On (Max) @ Id, Vgs: 28 mOhm @ 5.2A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 6V
- Power - Max: 7.8W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK? SC-70-6 Dual
- Supplier Device Package: PowerPAK? SC-70-6 Dual
|
封装: PowerPAK? SC-70-6 Dual |
库存5,760 |
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Vishay Siliconix |
MOSFET 2N-CH 30V 5.8A 8-SOIC
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5.8A, 8.2A
- Rds On (Max) @ Id, Vgs: 18.5 mOhm @ 6.8A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1W, 1.25W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存55,704 |
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Vishay Siliconix |
MOSFET 2N-CH 40V 20A PPAK SO-8
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 20A
- Rds On (Max) @ Id, Vgs: 19 mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 565pF @ 20V
- Power - Max: 15.6W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK? SO-8 Dual
- Supplier Device Package: PowerPAK? SO-8 Dual
|
封装: PowerPAK? SO-8 Dual |
库存104,772 |
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Vishay Siliconix |
IC REG LIN 4.5V 150MA TSOT23-5
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 6V
- Voltage - Output (Min/Fixed): 4.5V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.22V @ 150mA
- Current - Output: 150mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 85µA
- PSRR: 72dB ~ 38dB (1kHz ~ 100kHz)
- Control Features: Enable, Power Good
- Protection Features: Over Temperature, Short Circuit
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: SOT-23-5 Thin, TSOT-23-5
- Supplier Device Package: TSOT-23-5
|
封装: SOT-23-5 Thin, TSOT-23-5 |
库存4,560 |
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Vishay Siliconix |
IC REG DL BCK/LNR SYNC MLP55-32
- Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1)
- Function: Any Function
- Number of Outputs: 2
- Frequency - Switching: 200kHz ~ 1MHz
- Voltage/Current - Output 1: 0.6 V ~ 5.5 V, 10A
- Voltage/Current - Output 2: Adj to 0.75V, 200mA
- Voltage/Current - Output 3: -
- w/LED Driver: No
- w/Supervisor: No
- w/Sequencer: No
- Voltage - Supply: 3 V ~ 28 V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 32-PowerVFQFN
- Supplier Device Package: PowerPAK? MLP55-32
|
封装: 32-PowerVFQFN |
库存8,748 |
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Vishay Siliconix |
IC REG CTRLR HALF-BRG MLP65-20
- Output Type: Transistor Driver
- Function: Step-Up/Step-Down
- Output Configuration: Positive, Isolation Capable
- Topology: Half-Bridge
- Number of Outputs: 1
- Output Phases: 1
- Voltage - Supply (Vcc/Vdd): 10 V ~ 13.2 V
- Frequency - Switching: 500kHz
- Duty Cycle (Max): 92%
- Synchronous Rectifier: Yes
- Clock Sync: No
- Serial Interfaces: -
- Control Features: Current Limit, Sequencing, Soft Start
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: PowerPAK? MLP65-20
- Supplier Device Package: PowerPAK? MLP65-20
|
封装: PowerPAK? MLP65-20 |
库存72,000 |
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Vishay Siliconix |
IC ANALOG SWITCH
- Switch Circuit: -
- Multiplexer/Demultiplexer Circuit: -
- Number of Circuits: -
- On-State Resistance (Max): -
- Channel-to-Channel Matching (ΔRon): -
- Voltage - Supply, Single (V+): -
- Voltage - Supply, Dual (V±): -
- Switch Time (Ton, Toff) (Max): -
- -3db Bandwidth: -
- Charge Injection: -
- Channel Capacitance (CS(off), CD(off)): -
- Current - Leakage (IS(off)) (Max): -
- Crosstalk: -
- Operating Temperature: -
- Package / Case: -
- Supplier Device Package: -
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封装: - |
库存6,896 |
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Vishay Siliconix |
IC VIDEO SWITCH SPDT 16SOIC
- Switch Circuit: SPDT
- Multiplexer/Demultiplexer Circuit: 2:1
- Number of Circuits: 2
- On-State Resistance (Max): 15 Ohm
- Channel-to-Channel Matching (ΔRon): 1 Ohm
- Voltage - Supply, Single (V+): 3 V ~ 15 V
- Voltage - Supply, Dual (V±): ±3 V ~ 15 V
- Switch Time (Ton, Toff) (Max): 70ns, 50ns
- -3db Bandwidth: 500MHz
- Charge Injection: 19pC
- Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
- Current - Leakage (IS(off)) (Max): 10nA
- Crosstalk: -87dB @ 5MHz
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 16-SOIC
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封装: 16-SOIC (0.154", 3.90mm Width) |
库存3,456 |
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Vishay Siliconix |
IC SWITCH QUAD SPST 16-SOIC
- Switch Circuit: SPST - NO
- Multiplexer/Demultiplexer Circuit: 1:1
- Number of Circuits: 4
- On-State Resistance (Max): 35 Ohm
- Channel-to-Channel Matching (ΔRon): -
- Voltage - Supply, Single (V+): 5 V ~ 44 V
- Voltage - Supply, Dual (V±): ±5 V ~ 20 V
- Switch Time (Ton, Toff) (Max): 175ns, 145ns
- -3db Bandwidth: -
- Charge Injection: 5pC
- Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
- Current - Leakage (IS(off)) (Max): 250pA
- Crosstalk: -85dB @ 1MHz
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 16-SOIC
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封装: 16-SOIC (0.154", 3.90mm Width) |
库存289,020 |
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Vishay Siliconix |
IC MULTIPLEXER 8X1 16SOIC
- Switch Circuit: -
- Multiplexer/Demultiplexer Circuit: 8:1
- Number of Circuits: 1
- On-State Resistance (Max): 100 Ohm
- Channel-to-Channel Matching (ΔRon): 15 Ohm (Max)
- Voltage - Supply, Single (V+): 12V
- Voltage - Supply, Dual (V±): ±5 V ~ 20 V
- Switch Time (Ton, Toff) (Max): 150ns, 150ns
- -3db Bandwidth: -
- Charge Injection: 20pC
- Channel Capacitance (CS(off), CD(off)): 3pF, 26pF
- Current - Leakage (IS(off)) (Max): 500pA
- Crosstalk: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 16-SOIC
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封装: 16-SOIC (0.154", 3.90mm Width) |
库存621,804 |
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Vishay Siliconix |
IC SWITCH DUAL SPDT 14TSSOP
- Switch Circuit: SPDT
- Multiplexer/Demultiplexer Circuit: 2:1
- Number of Circuits: 2
- On-State Resistance (Max): 96 Ohm
- Channel-to-Channel Matching (ΔRon): 2 Ohm
- Voltage - Supply, Single (V+): 3 V ~ 16 V
- Voltage - Supply, Dual (V±): ±3 V ~ 8 V
- Switch Time (Ton, Toff) (Max): 56ns, 61ns
- -3db Bandwidth: 700MHz
- Charge Injection: -0.33pC
- Channel Capacitance (CS(off), CD(off)): 3.7pF, 4.4pF
- Current - Leakage (IS(off)) (Max): 500pA
- Crosstalk: -62dB @ 10MHz
- Operating Temperature: -40°C ~ 125°C (TA)
- Package / Case: 14-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 14-TSSOP
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封装: 14-TSSOP (0.173", 4.40mm Width) |
库存2,384 |
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